{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T18:10:19Z","timestamp":1729620619071,"version":"3.28.0"},"reference-count":24,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2010,3]]},"DOI":"10.1109\/isqed.2010.5450542","type":"proceedings-article","created":{"date-parts":[[2010,4,20]],"date-time":"2010-04-20T13:45:07Z","timestamp":1271771107000},"page":"432-436","source":"Crossref","is-referenced-by-count":1,"title":["Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits"],"prefix":"10.1109","author":[{"family":"Chenyue Ma","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Hao Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Xiufang Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Frank","family":"He","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Yadong He","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Xing Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Xinnan Lin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2003.1221122"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2004.838060"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(01)00122-6"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/16.485543"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(01)00222-2"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/16.8796"},{"key":"ref16","doi-asserted-by":"crossref","first-page":"326","DOI":"10.1109\/LED.2005.846587","article-title":"A Study of Negative-Bias Temperature Instability of SOI and Body-Tied FinFETs","volume":"26","author":"lee","year":"2005","journal-title":"IEEE EDL"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/16.293309"},{"key":"ref18","first-page":"419","article-title":"A New Physical and Quantitative Width Dependent Hot Carrier Model for Shallow-Trench-Isolated CMOS Devices","author":"chung","year":"2001","journal-title":"IEEE 39th Annu Int Reliability Physics Symp"},{"key":"ref19","doi-asserted-by":"crossref","first-page":"1289","DOI":"10.1109\/T-ED.1984.21702","article-title":"a new approach to the modeling of nonuniformly doped short-channel mosfet's","volume":"31","author":"ratnam","year":"1984","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.921998"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/16.557714"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/16.556154"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2006.251263"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/VTSA.1991.246664"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2000965"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/4.913744"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"566","DOI":"10.1109\/LED.2005.852534","article-title":"Hot Carrier-Induced Degradation in Bulk FinFETs","volume":"26","author":"kim","year":"2005","journal-title":"IEEEE Electron Device Lett"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/55.817441"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/16.81631"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.917334"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2003.1269158"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2020324"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.859570"}],"event":{"name":"2010 11th International Symposium on Quality of Electronic Design (ISQED)","start":{"date-parts":[[2010,3,22]]},"location":"San Jose, CA, USA","end":{"date-parts":[[2010,3,24]]}},"container-title":["2010 11th International Symposium on Quality Electronic Design (ISQED)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5443864\/5450389\/05450542.pdf?arnumber=5450542","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,19]],"date-time":"2017-06-19T07:19:36Z","timestamp":1497856776000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5450542\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,3]]},"references-count":24,"URL":"https:\/\/doi.org\/10.1109\/isqed.2010.5450542","relation":{},"subject":[],"published":{"date-parts":[[2010,3]]}}}