{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,4]],"date-time":"2024-09-04T22:38:39Z","timestamp":1725489519590},"reference-count":18,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2010,3]]},"DOI":"10.1109\/isqed.2010.5450553","type":"proceedings-article","created":{"date-parts":[[2010,4,20]],"date-time":"2010-04-20T09:45:07Z","timestamp":1271756707000},"page":"342-346","source":"Crossref","is-referenced-by-count":0,"title":["Modeling and analysis of III–V logic FETs for devices and circuits: Sub-22nm technology III–V SRAM cell design"],"prefix":"10.1109","author":[{"given":"Saeroonter","family":"Oh","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Jeong","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S. Simon","family":"Wong","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"H.-S. Philip","family":"Wong","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","first-page":"983","article-title":"Circuit-aware device design methodology for nanometer technologies: a case study for low power SRAM design","author":"chen","year":"2006","journal-title":"DATE"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.1063\/1.123060"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1145\/1077603.1077608"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1109\/16.784191"},{"doi-asserted-by":"publisher","key":"ref14","DOI":"10.1109\/VTSA.2009.5159299"},{"doi-asserted-by":"publisher","key":"ref15","DOI":"10.1109\/TED.2009.2016027"},{"year":"2008","key":"ref16"},{"doi-asserted-by":"publisher","key":"ref17","DOI":"10.1109\/IEDM.2008.4796798"},{"doi-asserted-by":"publisher","key":"ref18","DOI":"10.1109\/JSSC.2006.883344"},{"key":"ref4","first-page":"141","article-title":"Self-aligned inversion channel Ino.53Gao.47As n-MOSFETs with ALD-Al2O3 and MBE-AlO3\/Ga2o3(Gd2O3) as gate dielectrics","author":"chiu","year":"2009","journal-title":"VLSI-TSA"},{"key":"ref3","first-page":"371","article-title":"High performance surface channel In-rich Ino.75Gao.25As MOSFETs with ALD high-k as gate dielectric","author":"xuan","year":"2008","journal-title":"IEDM Tech Dig"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1109\/TED.2009.2033411"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/IEDM.2008.4796841"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1109\/55.596937"},{"key":"ref7","first-page":"261","article-title":"Aggressively scaled (0.143 µm2) 6T-SRAM cell for the 32 nm node and beyond","author":"fried","year":"2004","journal-title":"IEDM Tech Dig"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1109\/IEDM.2008.4796796"},{"key":"ref1","first-page":"625","article-title":"Heterogeneous integration of enhancement mode In0.7Ga0.3As quantum well transistor on silicon substrate using thin (?2µm) composite buffer architecture for high-speed and low-voltage (0.5V) logic applications","author":"hudait","year":"2007","journal-title":"IEDM Tech Dig"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1109\/TED.2008.927384"}],"event":{"name":"2010 11th International Symposium on Quality of Electronic Design (ISQED)","start":{"date-parts":[[2010,3,22]]},"location":"San Jose, CA, USA","end":{"date-parts":[[2010,3,24]]}},"container-title":["2010 11th International Symposium on Quality Electronic Design (ISQED)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5443864\/5450389\/05450553.pdf?arnumber=5450553","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,18]],"date-time":"2017-03-18T23:55:49Z","timestamp":1489881349000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5450553\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,3]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/isqed.2010.5450553","relation":{},"subject":[],"published":{"date-parts":[[2010,3]]}}}