{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,22]],"date-time":"2025-11-22T16:58:50Z","timestamp":1763830730103},"reference-count":22,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,3]]},"DOI":"10.1109\/isqed.2016.7479214","type":"proceedings-article","created":{"date-parts":[[2016,5,26]],"date-time":"2016-05-26T16:27:41Z","timestamp":1464280061000},"page":"278-283","source":"Crossref","is-referenced-by-count":14,"title":["Transistor design for 5nm and beyond: Slowing down electrons to speed up transistors"],"prefix":"10.1109","author":[{"given":"Victor","family":"Moroz","sequence":"first","affiliation":[]},{"given":"Joanne","family":"Huang","sequence":"additional","affiliation":[]},{"given":"Reza","family":"Arghavani","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref10","DOI":"10.1109\/IEDM.2007.4418914"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.1109\/TED.2014.2311129"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1109\/TED.2011.2175228"},{"key":"ref13","first-page":"147","article-title":"Gate-induced band-to-band tunneling leakage current in LDD MOSFETs","author":"wann","year":"1992","journal-title":"IEDM Digest"},{"doi-asserted-by":"publisher","key":"ref14","DOI":"10.1063\/1.126789"},{"doi-asserted-by":"publisher","key":"ref15","DOI":"10.1109\/TED.2011.2159008"},{"key":"ref16","article-title":"Design Guidelines for High Mobility Channel Bulk n-MOSFETs","author":"smith","year":"2007","journal-title":"Material Research Society Meeting"},{"doi-asserted-by":"publisher","key":"ref17","DOI":"10.1109\/TED.2008.922493"},{"year":"2015","journal-title":"Synopsys Sentaurus QTX version","key":"ref18"},{"key":"ref19","first-page":"242","article-title":"Extending Drift-Diffusion Paradigm into the Era of FinFETs and Nanowires","author":"choi","year":"2015","journal-title":"SISPAD Proceedings"},{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1109\/LED.2006.875766"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1109\/VTSA.2009.5159267"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1038\/nature11293"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1149\/1.3487530"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1109\/IEDM.2008.4796801"},{"key":"ref7","first-page":"103","article-title":"Material Engineering for 7nm FinFETs","author":"moroz","year":"2014","journal-title":"Electrochemical Society Meeting"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1016\/S1369-8001(03)00068-4"},{"key":"ref1","first-page":"61","article-title":"A 90 nm Logic Technology Featuring 50nm Strained Silicon Channel Transistors, 7 layers of Cu Interconnects, Low k ILD, and 1 um2 SRAM Cell","author":"thompson","year":"2002","journal-title":"IEDM Digest"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1109\/IEDM.2014.7047004"},{"key":"ref20","first-page":"71","article-title":"A 14nm Logic Technology Featuring 2nd-Generation FinFET Transistors, Air-Gapped Interconnects, Self-Aligned Double Patterning and a 0.0588um2 SRAM cell size","author":"natarajan","year":"2014","journal-title":"IEDM Digest"},{"doi-asserted-by":"publisher","key":"ref22","DOI":"10.1109\/16.987114"},{"key":"ref21","article-title":"FinFET Variability and its Impact on Digital and Analog Circuits","author":"moroz","year":"2013","journal-title":"WMED Conference"}],"event":{"name":"2016 17th International Symposium on Quality Electronic Design (ISQED)","start":{"date-parts":[[2016,3,15]]},"location":"Santa Clara, CA, USA","end":{"date-parts":[[2016,3,16]]}},"container-title":["2016 17th International Symposium on Quality Electronic Design (ISQED)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7470728\/7479140\/07479214.pdf?arnumber=7479214","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2016,9,23]],"date-time":"2016-09-23T15:59:10Z","timestamp":1474646350000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7479214\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,3]]},"references-count":22,"URL":"https:\/\/doi.org\/10.1109\/isqed.2016.7479214","relation":{},"subject":[],"published":{"date-parts":[[2016,3]]}}}