{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T07:39:30Z","timestamp":1775461170288,"version":"3.50.1"},"reference-count":25,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,3]]},"DOI":"10.1109\/isqed.2017.7918309","type":"proceedings-article","created":{"date-parts":[[2017,5,4]],"date-time":"2017-05-04T20:32:38Z","timestamp":1493929958000},"page":"155-160","source":"Crossref","is-referenced-by-count":8,"title":["Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory"],"prefix":"10.1109","author":[{"given":"Alexander","family":"Holst","sequence":"first","affiliation":[]},{"given":"Jae-Won","family":"Jang","sequence":"additional","affiliation":[]},{"given":"Swaroop","family":"Ghosh","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2010.2043069"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ECTC.2012.6248945"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2012.2198451"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/REDW.2012.6353717"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2013.2239311"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2013.2243133"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TEST.2014.7035341"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1145\/2744769.2744909"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4899-7537-9_2"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1017\/CBO9780511676208"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/DTIS.2012.6232963"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2005.859565"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2007.915402"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/MDAT.2013.2279752"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2009.2026905"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ATS.2008.29"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/DDECS.2011.5783110"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ICASTECH.2009.5409743"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/MT.1993.263148"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/ISPASS.2013.6557176"},{"key":"ref22","article-title":"Method of writing to scalable magnetoresistance random access memory element","author":"savtchenko","year":"2003","journal-title":"US Motorola Inc (Schaumburg IL)"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2010.2042041"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1143\/PTP.16.45"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1145\/2934583.2934614"},{"key":"ref25","article-title":"2M x 8 MRAM Memory Datasheet","year":"2016","journal-title":"MR4A08B Rev 8 7 Everspin Technologies"}],"event":{"name":"2017 18th International Symposium on Quality Electronic Design (ISQED)","location":"Santa Clara, CA, USA","start":{"date-parts":[[2017,3,14]]},"end":{"date-parts":[[2017,3,15]]}},"container-title":["2017 18th International Symposium on Quality Electronic Design (ISQED)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7910185\/7918273\/07918309.pdf?arnumber=7918309","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,5,22]],"date-time":"2017-05-22T21:40:44Z","timestamp":1495489244000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7918309\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,3]]},"references-count":25,"URL":"https:\/\/doi.org\/10.1109\/isqed.2017.7918309","relation":{},"subject":[],"published":{"date-parts":[[2017,3]]}}}