{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,17]],"date-time":"2025-09-17T15:21:09Z","timestamp":1758122469179},"reference-count":23,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,3]]},"DOI":"10.1109\/isqed.2017.7918358","type":"proceedings-article","created":{"date-parts":[[2017,5,4]],"date-time":"2017-05-04T16:32:38Z","timestamp":1493915558000},"page":"454-459","source":"Crossref","is-referenced-by-count":2,"title":["Wordline overdriving test: An effective predictive testing method for SRAMs against BTI aging"],"prefix":"10.1109","author":[{"family":"Jizhe Zhang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sandeep K.","family":"Gupta","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1145\/1687399.1687494"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TEST.2014.7035278"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2006.346883"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ICM.2010.5696167"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2005.850127"},{"key":"ref15","article-title":"Dynamic zero-sensitivity scheme for low-power cache memories","author":"chang","year":"2005","journal-title":"IEEE Micro"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2007.896317"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/DFTVS.1997.628306"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2006.73"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IWASI.2011.6004692"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2009.5173342"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2006.1705198"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2009.03.016"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2011.2167264"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2004.05.023"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2136316"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2007.369930"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409675"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2164300"},{"key":"ref20","article-title":"On-chip aging sensor to monitor nbti effect in nano-scale sram","author":"ceratti","year":"2012","journal-title":"DDECS"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1145\/2160916.2160926"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2006.320885"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.884077"}],"event":{"name":"2017 18th International Symposium on Quality Electronic Design (ISQED)","start":{"date-parts":[[2017,3,14]]},"location":"Santa Clara, CA, USA","end":{"date-parts":[[2017,3,15]]}},"container-title":["2017 18th International Symposium on Quality Electronic Design (ISQED)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7910185\/7918273\/07918358.pdf?arnumber=7918358","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,10,2]],"date-time":"2017-10-02T22:03:30Z","timestamp":1506981810000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7918358\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,3]]},"references-count":23,"URL":"https:\/\/doi.org\/10.1109\/isqed.2017.7918358","relation":{},"subject":[],"published":{"date-parts":[[2017,3]]}}}