{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,21]],"date-time":"2026-02-21T19:03:02Z","timestamp":1771700582015,"version":"3.50.1"},"reference-count":3,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2011,2]]},"DOI":"10.1109\/isscc.2011.5746415","type":"proceedings-article","created":{"date-parts":[[2011,4,8]],"date-time":"2011-04-08T23:44:40Z","timestamp":1302306280000},"page":"500-502","source":"Crossref","is-referenced-by-count":26,"title":["A 58nm 1.8V 1Gb PRAM with 6.4MB\/s program BW"],"prefix":"10.1109","author":[{"given":"Hoeju","family":"Chung","sequence":"first","affiliation":[]},{"given":"Byung Hoon","family":"Jeong","sequence":"additional","affiliation":[]},{"given":"ByungJun","family":"Min","sequence":"additional","affiliation":[]},{"given":"Youngdon","family":"Choi","sequence":"additional","affiliation":[]},{"given":"Beak-Hyung","family":"Cho","sequence":"additional","affiliation":[]},{"given":"Junho","family":"Shin","sequence":"additional","affiliation":[]},{"given":"Jinyoung","family":"Kim","sequence":"additional","affiliation":[]},{"given":"Jung","family":"Sunwoo","sequence":"additional","affiliation":[]},{"given":"Joon-min","family":"Park","sequence":"additional","affiliation":[]},{"given":"Qi","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Yong-jun","family":"Lee","sequence":"additional","affiliation":[]},{"given":"Sooho","family":"Cha","sequence":"additional","affiliation":[]},{"given":"Dukmin","family":"Kwon","sequence":"additional","affiliation":[]},{"given":"Sangtae","family":"Kim","sequence":"additional","affiliation":[]},{"given":"Sunghoon","family":"Kim","sequence":"additional","affiliation":[]},{"given":"Yoohwan","family":"Rho","sequence":"additional","affiliation":[]},{"given":"Mu-Hui","family":"Park","sequence":"additional","affiliation":[]},{"given":"Jaewhan","family":"Kim","sequence":"additional","affiliation":[]},{"given":"Ickhyun","family":"Song","sequence":"additional","affiliation":[]},{"given":"Sunghyun","family":"Jun","sequence":"additional","affiliation":[]},{"given":"Jaewook","family":"Lee","sequence":"additional","affiliation":[]},{"given":"KiSeung","family":"Kim","sequence":"additional","affiliation":[]},{"given":"Ki-won","family":"Lim","sequence":"additional","affiliation":[]},{"given":"Won-ryul","family":"Chung","sequence":"additional","affiliation":[]},{"given":"ChangHan","family":"Choi","sequence":"additional","affiliation":[]},{"given":"HoGeun","family":"Cho","sequence":"additional","affiliation":[]},{"given":"Inchul","family":"Shin","sequence":"additional","affiliation":[]},{"given":"Woochul","family":"Jun","sequence":"additional","affiliation":[]},{"given":"Seokwon","family":"Hwang","sequence":"additional","affiliation":[]},{"given":"Ki-Whan","family":"Song","sequence":"additional","affiliation":[]},{"given":"KwangJin","family":"Lee","sequence":"additional","affiliation":[]},{"given":"Sang-whan","family":"Chang","sequence":"additional","affiliation":[]},{"given":"Woo-Yeong","family":"Cho","sequence":"additional","affiliation":[]},{"given":"Jei-Hwan","family":"Yoo","sequence":"additional","affiliation":[]},{"given":"Young-Hyun","family":"Jun","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref3","article-title":"Low Power Double Data Rate 2 (LPDDR2)","year":"2010","journal-title":"JEDEC STANDARD JESD 209–2D"},{"key":"ref2","first-page":"270","article-title":"14.8 A 45nm 1Gb 1.8V Phase-Change Memory","author":"villa","year":"2007","journal-title":"ISSCC D of Tech Papers"},{"key":"ref1","first-page":"474","article-title":"A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB\/s Read Throughput","author":"lee","year":"2007","journal-title":"ISSCC Dig Tech Papers"}],"event":{"name":"2011 IEEE International Solid- State Circuits Conference - (ISSCC)","location":"San Francisco, CA, USA","start":{"date-parts":[[2011,2,20]]},"end":{"date-parts":[[2011,2,24]]}},"container-title":["2011 IEEE International Solid-State Circuits Conference"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5740653\/5746170\/05746415.pdf?arnumber=5746415","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,21]],"date-time":"2017-03-21T06:47:43Z","timestamp":1490078863000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5746415\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,2]]},"references-count":3,"URL":"https:\/\/doi.org\/10.1109\/isscc.2011.5746415","relation":{},"subject":[],"published":{"date-parts":[[2011,2]]}}}