{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,2]],"date-time":"2026-07-02T05:23:19Z","timestamp":1782969799837,"version":"3.54.5"},"reference-count":7,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,2]]},"DOI":"10.1109\/isscc.2012.6176957","type":"proceedings-article","created":{"date-parts":[[2012,4,5]],"date-time":"2012-04-05T17:40:15Z","timestamp":1333647615000},"page":"156-158","source":"Crossref","is-referenced-by-count":20,"title":["A 15mW 3.6GS\/s CT-ΔΣ ADC with 36MHz bandwidth and 83dB DR in 90nm CMOS"],"prefix":"10.1109","author":[{"given":"Pradeep","family":"Shettigar","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shanthi","family":"Pavan","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"3","first-page":"42","article-title":"A 2.8 mW ?? ADC with 83 dB DR and 1.92 MHz BW Using FIR Outer Feedback and TIA-Based Integrator","author":"gealow","year":"2011","journal-title":"Symp VLSI Circuits"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.884332"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2004.1332601"},{"key":"7","first-page":"470","article-title":"A 4GHz CT SD ADC with 70dB DR and -74dBFS THD in 125MHz BW","author":"bolatkale","year":"2011","journal-title":"ISSCC Dig Tech Papers"},{"key":"6","first-page":"174","article-title":"A 20MHz BW 68dB DR CT SD ADC Based on a Multi-Bit Time-Domain Quantizer and Feedback Element","author":"dhanasekharan","year":"2009","journal-title":"ISSCC Dig Tech Pap"},{"key":"5","first-page":"472","article-title":"An 8mW 50MS\/s CT DS Modulator with 81dB SFDR and Digital Background DAC Linearization","author":"kauffman","year":"2011","journal-title":"ISSCC Dig Tech Papers"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2048082"}],"event":{"name":"2012 IEEE International Solid- State Circuits Conference - (ISSCC)","location":"San Francisco, CA, USA","start":{"date-parts":[[2012,2,19]]},"end":{"date-parts":[[2012,2,23]]}},"container-title":["2012 IEEE International Solid-State Circuits Conference"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6171933\/6176863\/06176957.pdf?arnumber=6176957","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,21]],"date-time":"2017-03-21T19:00:14Z","timestamp":1490122814000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6176957\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,2]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/isscc.2012.6176957","relation":{},"subject":[],"published":{"date-parts":[[2012,2]]}}}