{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,28]],"date-time":"2026-03-28T16:43:41Z","timestamp":1774716221298,"version":"3.50.1"},"reference-count":6,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,2]]},"DOI":"10.1109\/isscc.2017.7870335","type":"proceedings-article","created":{"date-parts":[[2017,3,7]],"date-time":"2017-03-07T19:34:02Z","timestamp":1488915242000},"page":"210-211","source":"Crossref","is-referenced-by-count":19,"title":["12.3 A low-power and high-performance 10nm SRAM architecture for mobile applications"],"prefix":"10.1109","author":[{"given":"Michael","family":"Clinton","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hank","family":"Cheng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"HJ","family":"Liao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Robin","family":"Lee","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ching-Wei","family":"Wu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Johnny","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hau-Tai","family":"Hsieh","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Frank","family":"Wu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jung-Ping","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Atul","family":"Katoch","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Arun","family":"Achyuthan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Donald","family":"Mikan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bryan","family":"Sheffield","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jonathan","family":"Chang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2015.7063050"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2016.7418029"},{"key":"ref6","first-page":"1209","article-title":"A 0.6V Dual-Rail Compiler SRAM Design on 45nm CMOS Technology With Adaptive SRAM Power for Lower VDD_min VLSls","volume":"44","author":"chen","year":"2009","journal-title":"IEEE JSSC"},{"key":"ref5","first-page":"316","article-title":"A 20nm 112Mb SRAM in High-k Metal-Gate with Assist Circuitry for Low-Leakage and Low Vmin Applications","author":"chang","year":"2013","journal-title":"ISSCC"},{"key":"ref2","first-page":"238","article-title":"A 16nm 128Mb SRAM in high-K metal-gate FinFET technology with write-assist circuitry for low-VMIN applications","author":"chen","year":"2014","journal-title":"ISSCC"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2016.7417914"}],"event":{"name":"2017 IEEE International Solid- State Circuits Conference - (ISSCC)","location":"San Francisco, CA, USA","start":{"date-parts":[[2017,2,5]]},"end":{"date-parts":[[2017,2,9]]}},"container-title":["2017 IEEE International Solid-State Circuits Conference (ISSCC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7866667\/7870233\/07870335.pdf?arnumber=7870335","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,18]],"date-time":"2017-03-18T10:41:25Z","timestamp":1489833685000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7870335\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,2]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/isscc.2017.7870335","relation":{},"subject":[],"published":{"date-parts":[[2017,2]]}}}