{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,23]],"date-time":"2026-01-23T10:34:13Z","timestamp":1769164453332,"version":"3.49.0"},"reference-count":6,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,2,1]],"date-time":"2019-02-01T00:00:00Z","timestamp":1548979200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,2,1]],"date-time":"2019-02-01T00:00:00Z","timestamp":1548979200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,2,1]],"date-time":"2019-02-01T00:00:00Z","timestamp":1548979200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,2]]},"DOI":"10.1109\/isscc.2019.8662541","type":"proceedings-article","created":{"date-parts":[[2019,3,18]],"date-time":"2019-03-18T23:16:55Z","timestamp":1552951015000},"page":"204-206","source":"Crossref","is-referenced-by-count":8,"title":["12.2 Micro Short-Circuit Detector Including S\/H Circuit for 1hr Retention and 52dB Comparator Composed of C-Axis Aligned Crystalline IGZO FETs for Li-Ion Battery Protection IC"],"prefix":"10.1109","author":[{"given":"Hiroki","family":"Inoue","sequence":"first","affiliation":[]},{"given":"Takeshi","family":"Aoki","sequence":"additional","affiliation":[]},{"given":"Fumika","family":"Akasawa","sequence":"additional","affiliation":[]},{"given":"Toshiki","family":"Hamada","sequence":"additional","affiliation":[]},{"given":"Toshihiko","family":"Takeuchi","sequence":"additional","affiliation":[]},{"given":"Kousei","family":"Nei","sequence":"additional","affiliation":[]},{"given":"Takako","family":"Seki","sequence":"additional","affiliation":[]},{"given":"Yuto","family":"Yakubo","sequence":"additional","affiliation":[]},{"given":"Kei","family":"Takahashi","sequence":"additional","affiliation":[]},{"given":"Shuji","family":"Fukai","sequence":"additional","affiliation":[]},{"given":"Takahiko","family":"Ishizu","sequence":"additional","affiliation":[]},{"given":"Munehiro","family":"Kozuma","sequence":"additional","affiliation":[]},{"given":"Ryota","family":"Tajima","sequence":"additional","affiliation":[]},{"given":"Takanori","family":"Matsuzaki","sequence":"additional","affiliation":[]},{"given":"Takayuki","family":"Ikeda","sequence":"additional","affiliation":[]},{"given":"Makoto","family":"Ikeda","sequence":"additional","affiliation":[]},{"given":"Shunpei","family":"Yamazaki","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","first-page":"484","article-title":"A 20ns-Write 45ns-Read and $10 ^{14} -$ Cycle Endurance Memory Module Composed of 60nm Crystalline Oxide Semiconductor Transistors","author":"maeda","year":"2018","journal-title":"ISSCC Dig Tech Papers"},{"key":"ref3","first-page":"162","article-title":"A 140MHz 1Mbit 2T1C Gain-Cell Memory with 60nm Indium-Gallium–Zinc Oxide Transistor Embedded Into 65nm CMOS Logic Process Technology","author":"ishizu","year":"2017","journal-title":"Dig Symp VLSI Circuits"},{"key":"ref6","first-page":"251","article-title":"A 179-lux Energy-Autonomous Fully-Encapsulated 17-mm3 Sensor Node with Initial Charge Delay Circuit for Battery Protection","author":"lee","year":"2018","journal-title":"Dig Symp VLSI Circuits"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2017.7870359"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ITEC.2017.7993295"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"1669","DOI":"10.3390\/en11071669","article-title":"Detection Method for Soft Internal Short Circuit in Lithium-Ion Battery Pack by Extracting Open Circuit Voltage of Faulted Cell","author":"seo","year":"2018","journal-title":"Energies"}],"event":{"name":"2019 IEEE International Solid- State Circuits Conference - (ISSCC)","location":"San Francisco, CA, USA","start":{"date-parts":[[2019,2,17]]},"end":{"date-parts":[[2019,2,21]]}},"container-title":["2019 IEEE International Solid- State Circuits Conference - (ISSCC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8656625\/8662285\/08662541.pdf?arnumber=8662541","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,19]],"date-time":"2022-07-19T20:21:46Z","timestamp":1658262106000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8662541\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,2]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/isscc.2019.8662541","relation":{},"subject":[],"published":{"date-parts":[[2019,2]]}}}