{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,7]],"date-time":"2025-11-07T09:48:50Z","timestamp":1762508930982,"version":"build-2065373602"},"reference-count":6,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,2,19]],"date-time":"2023-02-19T00:00:00Z","timestamp":1676764800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,2,19]],"date-time":"2023-02-19T00:00:00Z","timestamp":1676764800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,2,19]]},"DOI":"10.1109\/isscc42615.2023.10067736","type":"proceedings-article","created":{"date-parts":[[2023,3,23]],"date-time":"2023-03-23T17:38:07Z","timestamp":1679593087000},"page":"1-3","source":"Crossref","is-referenced-by-count":8,"title":["A 4nm 1.15TB\/s HBM3 Interface with Resistor-Tuned Offset-Calibration and In-Situ Margin-Detection"],"prefix":"10.1109","author":[{"given":"Kwanyeob","family":"Chae","sequence":"first","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Jiyeon","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Jaegeun","family":"Song","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Billy","family":"Koo","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Jihun","family":"Oh","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Shinyoung","family":"Yi","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Won","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Dongha","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Taekyung","family":"Yeo","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Kyeongkeun","family":"Kang","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Sangsoo","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Eunsu","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Sukhyun","family":"Jung","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Sanghune","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Sungcheol","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Mijung","family":"Noh","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Hyogyuem","family":"Rhew","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]},{"given":"Jongshin","family":"Shin","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseung,Korea"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC42614.2022.9731562"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.23919\/vlsic.2019.8777959"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9062937"},{"key":"ref4","first-page":"t","article-title":"A 3.2 Gbps\/pin HBM2E PHY with Low Power I\/O and Enhanced Training Scheme for 2.5D System-in-Package Solution","volume-title":"IEEE Hot Chips Symp.","author":"Hwang","year":"2020"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIC.2019.8778082"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/isscc42613.2021.9365844"}],"event":{"name":"2023 IEEE International Solid- State Circuits Conference (ISSCC)","start":{"date-parts":[[2023,2,19]]},"location":"San Francisco, CA, USA","end":{"date-parts":[[2023,2,23]]}},"container-title":["2023 IEEE International Solid- State Circuits Conference (ISSCC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10067248\/10067251\/10067736.pdf?arnumber=10067736","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,3,3]],"date-time":"2024-03-03T05:02:32Z","timestamp":1709442152000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10067736\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,2,19]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/isscc42615.2023.10067736","relation":{},"subject":[],"published":{"date-parts":[[2023,2,19]]}}}