{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,8]],"date-time":"2025-03-08T05:15:56Z","timestamp":1741410956940,"version":"3.38.0"},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,2,16]],"date-time":"2025-02-16T00:00:00Z","timestamp":1739664000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,2,16]],"date-time":"2025-02-16T00:00:00Z","timestamp":1739664000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,2,16]]},"DOI":"10.1109\/isscc49661.2025.10904768","type":"proceedings-article","created":{"date-parts":[[2025,3,6]],"date-time":"2025-03-06T18:33:12Z","timestamp":1741285992000},"page":"164-166","source":"Crossref","is-referenced-by-count":0,"title":["8.4 A 4GHz, 0.69%-Accuracy Voltage-Droop Detector with Multiple Remote Sensing and Under 2-Cycle Detection Latency in 2nm GAAFET"],"prefix":"10.1109","author":[{"given":"DongHoon","family":"Jung","sequence":"first","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Dongha","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Seki","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Susie","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Min Young","family":"Kang","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Takahiro","family":"Nomiyama","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Dongsu","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Jongwoo","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/LSSC.2019.2935561"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2015.2473655"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2021.3091586"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9062897"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC42614.2022.9731604"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2017.7870452"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2669025"}],"event":{"name":"2025 IEEE International Solid-State Circuits Conference (ISSCC)","start":{"date-parts":[[2025,2,16]]},"location":"San Francisco, CA, USA","end":{"date-parts":[[2025,2,20]]}},"container-title":["2025 IEEE International Solid-State Circuits Conference (ISSCC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10904417\/10904496\/10904768.pdf?arnumber=10904768","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,3,7]],"date-time":"2025-03-07T06:33:45Z","timestamp":1741329225000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10904768\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,2,16]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/isscc49661.2025.10904768","relation":{},"subject":[],"published":{"date-parts":[[2025,2,16]]}}}