{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,15]],"date-time":"2025-11-15T10:15:56Z","timestamp":1763201756596},"reference-count":9,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,10]]},"DOI":"10.1109\/issse.2012.6374314","type":"proceedings-article","created":{"date-parts":[[2012,12,12]],"date-time":"2012-12-12T17:00:17Z","timestamp":1355331617000},"page":"1-4","source":"Crossref","is-referenced-by-count":23,"title":["Highly linear X-band GaN-based low-noise amplifier"],"prefix":"10.1109","author":[{"given":"Cristina","family":"Andrei","sequence":"first","affiliation":[]},{"given":"Ralf","family":"Doerner","sequence":"additional","affiliation":[]},{"given":"Olof","family":"Bengtsson","sequence":"additional","affiliation":[]},{"given":"Serguei A.","family":"Chevtchenko","sequence":"additional","affiliation":[]},{"given":"Wolfgang","family":"Heinrich","sequence":"additional","affiliation":[]},{"given":"Matthias","family":"Rudolph","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"3","first-page":"36","article-title":"Highly linear broadband gan-based low-noise amplifier","author":"andrei","year":"2010","journal-title":"German Microwave Conference"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2008.2002458"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2004.1339093"},{"key":"7","first-page":"1","article-title":"Robust broadband (4 ghz-16 ghz) gan mmic lna","author":"micovic","year":"2007","journal-title":"IEEE CSIC Symp Dig"},{"key":"6","first-page":"439","article-title":"X-Band GaN-HEMT LNA Performance versus Robustness Trade-Off","author":"bettidi","year":"2009","journal-title":"European Microwave Integrated Circuits Conference"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2006.886907"},{"key":"4","first-page":"237","article-title":"Investigation and reduction of leakage current associated with gate encapsulation by SiNx in AlGaN\/GaN HFETs","author":"chevtchenko","year":"0","journal-title":"Proc of Int Conf on Compound Semiconductor Manufacturing Technology (CS ManTech 2011)"},{"key":"9","first-page":"101","article-title":"Robust X-band LNAs in AlGaN\/GaN technology","author":"janssen","year":"2009","journal-title":"European Microwave Integrated Circuits Conference"},{"key":"8","first-page":"71","article-title":"Robust GaN HEMT low-noise amplifier MMICs for x-band applications","author":"krausse","year":"2004","journal-title":"Proc 12th GaAs Symposium Amsterdam 2004"}],"event":{"name":"2012 International Symposium on Signals, Systems and Electronics (ISSSE)","start":{"date-parts":[[2012,10,3]]},"location":"Potsdam, Germany","end":{"date-parts":[[2012,10,5]]}},"container-title":["2012 International Symposium on Signals, Systems, and Electronics (ISSSE)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6362332\/6374285\/06374314.pdf?arnumber=6374314","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,21]],"date-time":"2017-03-21T21:50:14Z","timestamp":1490133014000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6374314\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,10]]},"references-count":9,"URL":"https:\/\/doi.org\/10.1109\/issse.2012.6374314","relation":{},"subject":[],"published":{"date-parts":[[2012,10]]}}}