{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,6]],"date-time":"2025-08-06T12:13:36Z","timestamp":1754482416259,"version":"3.28.0"},"reference-count":9,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,11]]},"DOI":"10.1109\/itw.2017.8278030","type":"proceedings-article","created":{"date-parts":[[2018,2,7]],"date-time":"2018-02-07T20:45:14Z","timestamp":1518036314000},"page":"201-203","source":"Crossref","is-referenced-by-count":6,"title":["3X endurance enhancement by advanced signal processor for 3D NAND flash memory"],"prefix":"10.1109","author":[{"given":"Wei","family":"Lin","sequence":"first","affiliation":[]},{"given":"Yu-Cheng","family":"Hsu","sequence":"additional","affiliation":[]},{"given":"Tsai-Hao","family":"Kuo","sequence":"additional","affiliation":[]},{"given":"Yu-Siang","family":"Yang","sequence":"additional","affiliation":[]},{"given":"Szu-Wei","family":"Chen","sequence":"additional","affiliation":[]},{"given":"Chun-Wei","family":"Tsao","sequence":"additional","affiliation":[]},{"given":"An-Chang","family":"Liu","sequence":"additional","affiliation":[]},{"given":"Lih-Yuarn","family":"Ou","sequence":"additional","affiliation":[]},{"given":"Tien-Ching","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Shao-Wei","family":"Yen","sequence":"additional","affiliation":[]},{"given":"Yu-Hsiang","family":"Lin","sequence":"additional","affiliation":[]},{"given":"Kuo-Hsin","family":"Lai","sequence":"additional","affiliation":[]},{"given":"Chi-Heng","family":"Yang","sequence":"additional","affiliation":[]},{"given":"Li-Chun","family":"Liang","sequence":"additional","affiliation":[]},{"given":"Pei-Jung","family":"Hsu","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1109\/LED.2010.2066253"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1109\/NVMT.2009.5429789"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1109\/TED.2008.2003332"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/LED.2009.2021494"},{"key":"ref8","article-title":"Effects of floating-gate interference on NAND flash memory cell operation","volume":"23","author":"lee","year":"2002","journal-title":"Electron Device Letters"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1109\/IEDM.2004.1419320"},{"key":"ref2","article-title":"Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in nand Flash Memory Strings","volume":"31","author":"joe","year":"2010","journal-title":"Electron Device Letters"},{"key":"ref9","article-title":"Direct Field Effect of Neighboring Cell Transistor on Cell-to-Cell Interference of nand Flash Cell Arrays","volume":"30","author":"park","year":"2009","journal-title":"Electron Device Letters"},{"key":"ref1","article-title":"The 1\/f Noise and Random Telegraph Noise Characteristics in Floating-Gate NAND Flash Memories","volume":"53","author":"bae","year":"2009","journal-title":"Transactions Electron Devices"}],"event":{"name":"2017 IEEE Information Theory Workshop (ITW)","start":{"date-parts":[[2017,11,6]]},"location":"Kaohsiung, Taiwan","end":{"date-parts":[[2017,11,10]]}},"container-title":["2017 IEEE Information Theory Workshop (ITW)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8266764\/8277915\/08278030.pdf?arnumber=8278030","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,2,28]],"date-time":"2018-02-28T21:09:32Z","timestamp":1519852172000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8278030\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,11]]},"references-count":9,"URL":"https:\/\/doi.org\/10.1109\/itw.2017.8278030","relation":{},"subject":[],"published":{"date-parts":[[2017,11]]}}}