{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,1,13]],"date-time":"2024-01-13T08:01:14Z","timestamp":1705132874361},"reference-count":7,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"1","license":[{"start":{"date-parts":[[2012,3,1]],"date-time":"2012-03-01T00:00:00Z","timestamp":1330560000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Emerg. Sel. Topics Circuits Syst."],"published-print":{"date-parts":[[2012,3]]},"DOI":"10.1109\/jetcas.2012.2187401","type":"journal-article","created":{"date-parts":[[2012,3,7]],"date-time":"2012-03-07T20:04:40Z","timestamp":1331150680000},"page":"42-51","source":"Crossref","is-referenced-by-count":9,"title":["Probabilistically Programmed STT-MRAM"],"prefix":"10.1109","volume":"2","author":[{"given":"Wenqing","family":"Wu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaochun","family":"Zhu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seung","family":"Kang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kendrick","family":"Yuen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Rob","family":"Gilmore","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","first-page":"296","article-title":"A 45 nm 1 Mb embedded STT-MRAM with design techniques to minimize read disturbance","author":"kim","year":"2011","journal-title":"VLSI Tech Dig"},{"key":"ref3","first-page":"279","article-title":"45 nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T\/1MTJ cell","author":"lin","year":"2009","journal-title":"IEDM Tech Dig"},{"key":"ref6","first-page":"1","article-title":"A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)","author":"reach","year":"2008","journal-title":"IEDM Tech Dig"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.3259398"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424382"},{"key":"ref2","first-page":"480","article-title":"2 Mb spin-transfer torque RAM (SPRAM) with bit-by-bit bidirectional current write and parallelizing-direction current read","author":"kawahara","year":"2007","journal-title":"ISSCC Tech Dig"},{"key":"ref1","first-page":"473","article-title":"A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-RAM","author":"hosomi","year":"2006","journal-title":"IEDM Tech Dig"}],"container-title":["IEEE Journal on Emerging and Selected Topics in Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5503868\/6179443\/06165672.pdf?arnumber=6165672","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,10,10]],"date-time":"2021-10-10T23:54:11Z","timestamp":1633910051000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6165672\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,3]]},"references-count":7,"journal-issue":{"issue":"1"},"URL":"https:\/\/doi.org\/10.1109\/jetcas.2012.2187401","relation":{},"ISSN":["2156-3357","2156-3365"],"issn-type":[{"value":"2156-3357","type":"print"},{"value":"2156-3365","type":"electronic"}],"subject":[],"published":{"date-parts":[[2012,3]]}}}