{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,12]],"date-time":"2026-04-12T00:14:54Z","timestamp":1775952894242,"version":"3.50.1"},"reference-count":75,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"2","license":[{"start":{"date-parts":[[2016,6,1]],"date-time":"2016-06-01T00:00:00Z","timestamp":1464739200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Emerg. Sel. Topics Circuits Syst."],"published-print":{"date-parts":[[2016,6]]},"DOI":"10.1109\/jetcas.2016.2547681","type":"journal-article","created":{"date-parts":[[2016,4,6]],"date-time":"2016-04-06T20:07:15Z","timestamp":1459973235000},"page":"134-145","source":"Crossref","is-referenced-by-count":95,"title":["Comparative Evaluation of Spin-Transfer-Torque and Magnetoelectric Random Access Memory"],"prefix":"10.1109","volume":"6","author":[{"given":"Shaodi","family":"Wang","sequence":"first","affiliation":[]},{"given":"Hochul","family":"Lee","sequence":"additional","affiliation":[]},{"given":"Farbod","family":"Ebrahimi","sequence":"additional","affiliation":[]},{"given":"P. Khalili","family":"Amiri","sequence":"additional","affiliation":[]},{"given":"Kang L.","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Puneet","family":"Gupta","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref73","first-page":"1","article-title":"A white paper on the benefits of chipkill-correct ECC for PC server main memory","author":"dell","year":"1997","journal-title":"IBM Microelectronics Division"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1109\/12.75143"},{"key":"ref71","article-title":"MEMRES: A fast memory system reliability simulator","author":"wang","year":"2015","journal-title":"IEEE workshop on silicon errors in logic-system effects"},{"key":"ref70","first-page":"148","article-title":"A nondestructive self-reference scheme for spin-transfer torque random access memory (STT-RAM)","author":"chen","year":"2010","journal-title":"Proc IEEE DATE"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2012.2185930"},{"key":"ref39","author":"wu","year":"2012","journal-title":"Exploiting Parallelism by Data Dependency Elimination A Case Study of Circuit Simulation Algorithms"},{"key":"ref75","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2015.7056055"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.7567\/APEX.6.073005"},{"key":"ref33","doi-asserted-by":"crossref","first-page":"1l","DOI":"10.1016\/0304-8853(96)00062-5","article-title":"Current-driven excitation of magnetic multilayers","volume":"159","author":"slonczewski","year":"1996","journal-title":"J Magnetism Magnetic Mater"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/TRANSDUCERS.2015.7181072"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/OMN.2013.6659035"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1063\/1.4869152"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1063\/1.3599492"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2005.1609379"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1038\/nphys783"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1063\/1.1899764"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2264937"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2014.6742928"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2000.839717"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1109\/4.475701"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1063\/1.1852081"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2182053"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2178416"},{"key":"ref65","year":"0","journal-title":"PTM Models"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1109\/SC.2012.13"},{"key":"ref29","first-page":"33","article-title":"Spin-transfer torque MRAM (STT-MRAM): Challenges and prospects","volume":"18","author":"huai","year":"2008","journal-title":"AAPPS Bull"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1109\/MWSCAS.2010.5548588"},{"key":"ref68","first-page":"436","article-title":"An 8Tb\/s 1pJ\/b 0.8 mm2\/Tb\/s QDR inductive-coupling interface between 65 nm CMOS GPU and <formula formulatype=\"inline\"><tex Notation=\"TeX\">$0.1~\\mu{\\rm m}$<\/tex><\/formula> DRAM","author":"miura","year":"2010","journal-title":"IEEE Int Solid-State Circuits Conf Dig Tech Papers"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4418898"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.4922297"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/20.800991"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3171"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2014.06.003"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1145\/1391469.1391540"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ICCAD.2011.6105370"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1145\/2429384.2429541"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1063\/1.3540361"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2014.2367130"},{"key":"ref50","first-page":"49","article-title":"Switching properties in spin transper torque MRAM with sub-5O nm MTJ size","author":"nam","year":"2006","journal-title":"Proc IEEE Non-Volatile Memory Technology Symp"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2006.877743"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2015.2393852"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2014.6742991"},{"key":"ref57","article-title":"An evaluation framework for nanotransfer printing-based feature-level heterogeneous integration in VLSI circuits","author":"leung","year":"2015","journal-title":"IEEE Trans Very Large Scale (VLSI) Syst"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1149\/1.3505295"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2008.4672056"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1063\/1.372612"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1145\/1391469.1391698"},{"key":"ref52","first-page":"11","article-title":"Magnetic tunnel junction materials for electronic applications","volume":"52","author":"slaughter","year":"2000","journal-title":"JOM"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1145\/2228360.2228406"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ISPASS.2013.6557176"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2011.2164148"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ISCA.2014.6853222"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2224256"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1063\/1.4773342"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6479130"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2255096"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1063\/1.4753816"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1063\/1.4751035"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3172"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.87.197201"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.91.184410"},{"key":"ref6","year":"2011","journal-title":"ITRS 2008"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.3536482"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2011.5749716"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1145\/2155620.2155659"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2012.6243782"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2009.2035509"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/INTMAG.2015.7157018"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.54.04DD05"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.84.064413"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/ICCAD.2014.7001404"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1147\/rd.524.0439"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-642-19475-7_33"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1063\/1.1462872"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/ISLPED.2011.5993623"}],"container-title":["IEEE Journal on Emerging and Selected Topics in Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/5503868\/7488291\/07448479.pdf?arnumber=7448479","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:11:44Z","timestamp":1642003904000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7448479\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,6]]},"references-count":75,"journal-issue":{"issue":"2"},"URL":"https:\/\/doi.org\/10.1109\/jetcas.2016.2547681","relation":{},"ISSN":["2156-3357","2156-3365"],"issn-type":[{"value":"2156-3357","type":"print"},{"value":"2156-3365","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,6]]}}}