{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,28]],"date-time":"2026-03-28T17:53:27Z","timestamp":1774720407698,"version":"3.50.1"},"reference-count":93,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"2","license":[{"start":{"date-parts":[[2010,2,1]],"date-time":"2010-02-01T00:00:00Z","timestamp":1264982400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Proc. IEEE"],"published-print":{"date-parts":[[2010,2]]},"DOI":"10.1109\/jproc.2009.2033621","type":"journal-article","created":{"date-parts":[[2010,1,26]],"date-time":"2010-01-26T17:31:14Z","timestamp":1264527074000},"page":"191-214","source":"Crossref","is-referenced-by-count":106,"title":["Technologies for Ultradynamic Voltage Scaling"],"prefix":"10.1109","volume":"98","author":[{"given":"A.P.","family":"Chandrakasan","sequence":"first","affiliation":[]},{"given":"D.C.","family":"Daly","sequence":"additional","affiliation":[]},{"given":"D.F.","family":"Finchelstein","sequence":"additional","affiliation":[]},{"given":"J.","family":"Kwong","sequence":"additional","affiliation":[]},{"given":"Y.K.","family":"Ramadass","sequence":"additional","affiliation":[]},{"given":"M.E.","family":"Sinangil","sequence":"additional","affiliation":[]},{"given":"V.","family":"Sze","sequence":"additional","affiliation":[]},{"given":"N.","family":"Verma","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.1109\/4.972140"},{"key":"ref72","year":"0","journal-title":"LM2797\/LM2798 120 mA High Efficiency Step-Down Switched Capacitor Voltage Converter With Voltage Monitoring"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2004.840986"},{"key":"ref70","year":"1995","journal-title":"Dynamically configurable switched capacitor power supply and method"},{"key":"ref76","first-page":"187","article-title":"a 0.2 v 0.44 <ref_formula><tex notation=\"tex\">$\\mu \\hbox{w}$<\/tex><\/ref_formula> 20 khz analog to digital <ref_formula><tex notation=\"tex\">$\\sigma\\delta$<\/tex><\/ref_formula> modulator with 57 fj\/conversion fom","author":"wismar","year":"2006","journal-title":"Proc IEEE Eur Solid State Circuits Conf"},{"key":"ref77","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2007.911069"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.856289"},{"key":"ref39","first-page":"316","article-title":"a 320 mv 56 <ref_formula><tex notation=\"tex\">$\\mu \\hbox{w}$<\/tex><\/ref_formula> 411 gops\/watt ultra-low voltage motion estimation accelerator in 65 nm cmos","author":"kaul","year":"2008","journal-title":"IEEE Int Solid-State Circuits Conf Dig Tech Papers"},{"key":"ref75","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.897157"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2005.859590"},{"key":"ref78","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2003.813217"},{"key":"ref79","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2008.4672032"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1972.1050260"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1977.1050882"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.884077"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2007.895613"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1145\/1283780.1283837"},{"key":"ref36","first-page":"154","article-title":"a 85 mv 40 nw process-tolerant subthreshold 8<ref_formula><tex notation=\"tex\">$\\times$<\/tex><\/ref_formula> 8 fir filter in 130 nm technology","author":"hwang","year":"2007","journal-title":"Symp VLSI Circuits Dig Tech Papers"},{"key":"ref35","first-page":"300","article-title":"ultra-dynamic voltage scaling (udvs) using sub-threshold operation and local voltage dithering in 90 nm cmos","author":"calhoun","year":"2005","journal-title":"IEEE Int Solid-State Circuits Conf Dig Tech Papers"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2003.819573"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2004.837945"},{"key":"ref62","doi-asserted-by":"crossref","first-page":"76","DOI":"10.1145\/280756.280790","article-title":"the simulation and evaluation of dynamic voltage scaling algorithms","author":"pering","year":"1998","journal-title":"Proc Int Symp Low Power Electron Design"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2007.373589"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1109\/4.753685"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1989.572629"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.914720"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.881549"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.1994.349672"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.2007.4342378"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.2007160"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.1999.788980"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2003.822773"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2005.03.003"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2005.1609253"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/5.371968"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1161\/01.CIR.101.1.61"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.1990.110213"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.852162"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/LPE.2005.195479"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4418976"},{"key":"ref26","first-page":"405","article-title":"robust design of high fan-in\/out subthreshold circuits","author":"chen","year":"2005","journal-title":"IEEE Int Conf Comput Design VLSI Comput Processors"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2004.837945"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.897148"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.891726"},{"key":"ref93","doi-asserted-by":"publisher","DOI":"10.1109\/MM.2004.85"},{"key":"ref92","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.886537"},{"key":"ref91","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.886542"},{"key":"ref90","doi-asserted-by":"publisher","DOI":"10.1109\/ASSCC.2007.4425763"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2007.4342739"},{"key":"ref58","first-page":"282","article-title":"a reconfigurable 65 nm sram achieving voltage scalability from 0.25 v to 1.2 v and performance scalability from 20 khz to 200 mhz","author":"sinangil","year":"2008","journal-title":"Proc IEEE ESSCIRC"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1109\/SOCC.2006.283862"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.859025"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2007.373427"},{"key":"ref54","first-page":"388","article-title":"a 32 kb 10 t subthreshold sram array with bit-interleaving and differential read-scheme in 90 nm cmos","author":"chang","year":"2008","journal-title":"IEEE Int Solid-State Circuits Conf Dig Tech Papers"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/SOCC.2006.283862"},{"key":"ref52","first-page":"330","article-title":"a 0.2 v, 480 kb sunthreshold sram with 1 k cells per bitline for ultra-low-voltage computing","author":"kim","year":"2007","journal-title":"IEEE Int Solid-State Circuits Conf Dig Tech Papers"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2006.1705356"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2007.4342694"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1987.1052809"},{"key":"ref12","first-page":"318","article-title":"a 65 nm sub-<ref_formula><tex notation=\"tex\">$v_{t}$<\/tex><\/ref_formula> microcontroller with integrated sram and switched-capacitor dcdc converter","author":"kwong","year":"2008","journal-title":"IEEE Int Solid-State Circuits Conf Dig Tech Papers"},{"key":"ref13","first-page":"138","article-title":"a 1 v, micropower system-on-chip for vital-sign monitoring in wireless body sensor networks","author":"wong","year":"2008","journal-title":"IEEE Int Solid-State Circuits Conf Dig Tech Papers"},{"key":"ref14","year":"0","journal-title":"MSP430x1xx Family User's Guide"},{"key":"ref15","author":"chan","year":"0","journal-title":"A Single-Chip Pulsoximeter Design Using the MSP430"},{"key":"ref82","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2032699"},{"key":"ref16","year":"0"},{"key":"ref81","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2003.811435"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1056\/NEJM199112193252503"},{"key":"ref84","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2004.1332709"},{"key":"ref18","first-page":"349","article-title":"automatic qt interval measurement using rule-based gradient method","author":"chudacek","year":"2006","journal-title":"Comput Cardiol"},{"key":"ref83","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.906210"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1056\/NEJMra032426"},{"key":"ref80","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2032699"},{"key":"ref89","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2007.373404"},{"key":"ref4","doi-asserted-by":"crossref","first-page":"9","DOI":"10.1109\/LPE.2000.155245","article-title":"design issues for dynamic voltage scaling","author":"burd","year":"2000","journal-title":"ISLPED 00 the 2000 International Symposium on Low Power Electronics and Design (Cat No 00TH8514) LPE-00"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2009.4977291"},{"key":"ref6","year":"0","journal-title":"Technical Note TN2188 Exporting Movies for iPod Apple TV and iPhone"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/92.645069"},{"key":"ref85","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2028933"},{"key":"ref8","year":"2008","journal-title":"N10176 Call for Test Materials for Future High-Performance Video Coding Standards Development"},{"key":"ref86","doi-asserted-by":"publisher","DOI":"10.1109\/ASSCC.2008.4708756"},{"key":"ref7","year":"2003","journal-title":"Recommendation ITU-T H 264 Advanced Video Coding for Generic Audiovisual Services"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/.2005.1469239"},{"key":"ref87","doi-asserted-by":"publisher","DOI":"10.1109\/MEMCOD.2008.4547707"},{"key":"ref88","doi-asserted-by":"publisher","DOI":"10.1109\/TCSVT.2008.918437"},{"key":"ref9","year":"2009","journal-title":"Draft Request for Video Test Sequences for Enhanced Performance Video Coding Work (for Approval)"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/NEWCAS.2006.250895"},{"key":"ref45","first-page":"29","article-title":"canary replica feedback for near-drv standby vdd scaling in a 90 nm sram","author":"wang","year":"2007","journal-title":"Proc IEEE Custom Integr Circuits Conf"},{"key":"ref48","first-page":"382","article-title":"a single-power-supply 0.7 v 1 ghz 45 nm sram with an asymmetrical unit-<ref_formula><tex notation=\"tex\">$\\beta$ <\/tex><\/ref_formula>-ratio memory cell","author":"kawasumi","year":"2008","journal-title":"IEEE Int Solid-State Circuits Conf Dig Tech Papers"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.859030"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/4.913744"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.859030"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2004.1346592"},{"key":"ref43","first-page":"55","article-title":"sram leakage suppression by minimizing standby supply voltage","author":"qin","year":"2004","journal-title":"Proc IEEE Int Symp Quality Electron Design"}],"container-title":["Proceedings of the IEEE"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5\/5395752\/05395770.pdf?arnumber=5395770","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,10,11]],"date-time":"2021-10-11T01:00:12Z","timestamp":1633914012000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5395770\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,2]]},"references-count":93,"journal-issue":{"issue":"2"},"URL":"https:\/\/doi.org\/10.1109\/jproc.2009.2033621","relation":{},"ISSN":["0018-9219","1558-2256"],"issn-type":[{"value":"0018-9219","type":"print"},{"value":"1558-2256","type":"electronic"}],"subject":[],"published":{"date-parts":[[2010,2]]}}}