{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,17]],"date-time":"2026-03-17T15:02:18Z","timestamp":1773759738534,"version":"3.50.1"},"reference-count":102,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"7","license":[{"start":{"date-parts":[[2013,6,1]],"date-time":"2013-06-01T00:00:00Z","timestamp":1370044800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["0802125"],"award-info":[{"award-number":["0802125"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2013,6]]},"abstract":"<jats:p>As conventional transistors become smaller and thinner in the quest for higher performance, a number of hurdles are encountered. The discovery of electronic-grade 2-D crystals has added a new &amp;#x201C;layer&amp;#x201D; to the list of conventional semiconductors used for transistors. This paper discusses the properties of 2-D crystals by comparing them with their 3-D counterparts. Their suitability for electronic devices is discussed. In particular, the use of graphene and other 2-D crystals for interband tunneling transistors is discussed for low-power logic applications. Since tunneling phenomenon in reduced dimensions is not conventionally covered in texts, the physics is developed explicitly before applying it to transistors. Though we are in an early stage of learning to design devices with 2-D crystals, they have already been the motivation behind a list of truly novel ideas. This paper reviews a number of such ideas.<\/jats:p>","DOI":"10.1109\/jproc.2013.2253435","type":"journal-article","created":{"date-parts":[[2013,5,3]],"date-time":"2013-05-03T19:21:57Z","timestamp":1367608917000},"page":"1585-1602","source":"Crossref","is-referenced-by-count":200,"title":["Tunneling Transistors Based on Graphene and 2-D Crystals"],"prefix":"10.1109","volume":"101","author":[{"given":"Debdeep","family":"Jena","sequence":"first","affiliation":[]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2159221"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.85.115317"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1063\/1.121220"},{"key":"ref32","first-page":"22105-1","article-title":"Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy","volume":"101","author":"wang","year":"2012","journal-title":"Appl Phys Lett"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1007\/s00032-003-0014-1"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1038\/318162a0"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.31.1400"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1038\/nmat1134"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1063\/1.2776887"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1063\/1.369590"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.96.066102"},{"key":"ref27","doi-asserted-by":"crossref","first-page":"113","DOI":"10.1021\/nl203065e","article-title":"Tunable bandgap in silicene and germanene","volume":"12","author":"ni","year":"2012","journal-title":"Nano Lett"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/DRC.2012.6256984"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1038\/nature04235"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.0502848102"},{"key":"ref21","doi-asserted-by":"crossref","first-page":"1191","DOI":"10.1126\/science.1125925","article-title":"Electronic confinement and coherence length in patterned epitaxial graphene","volume":"312","author":"berger","year":"2006","journal-title":"Science"},{"key":"ref24","doi-asserted-by":"crossref","first-page":"783","DOI":"10.1038\/27405","article-title":"Formation and manipulation of a metallic wire of single gold atoms","volume":"395","author":"yanson","year":"1998","journal-title":"Nature"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/5.915374"},{"key":"ref101","doi-asserted-by":"publisher","DOI":"10.1063\/1.368610"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.108.155501"},{"key":"ref100","doi-asserted-by":"publisher","DOI":"10.1063\/1.3686639"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1080\/00018738700101951"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(85)90190-X"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2711"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1063\/1.4716983"},{"key":"ref58","doi-asserted-by":"crossref","first-page":"1312","DOI":"10.1126\/science.1171245","article-title":"Large-area synthesis of high-quality and uniform graphene films on copper foils","volume":"324","author":"li","year":"2009","journal-title":"Science"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2020699"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1063\/1.2749839"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/DRC.2012.6257006"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2009362"},{"key":"ref53","doi-asserted-by":"crossref","first-page":"947","DOI":"10.1126\/science.1218461","article-title":"Field-effect tunneling transistor based on vertical graphene heterostructures","volume":"335","author":"britnell","year":"2012","journal-title":"Science"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1126\/science.1220527"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.105.136805"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.73.767"},{"key":"ref3","article-title":"Turning potential into realities: The invention of the integrated circuit","author":"kilby","year":"2000","journal-title":"Nobel Lecture"},{"key":"ref6","first-page":"319","article-title":"<ref_formula><tex Notation=\"TeX\">$f_{T}=$<\/tex><\/ref_formula> 688 GHz and <ref_formula> <tex Notation=\"TeX\">$f_{\\rm mac}=$<\/tex><\/ref_formula> 800 GHz in <ref_formula><tex Notation=\"TeX\">$L_{g}=$<\/tex> <\/ref_formula> 40 nm In<ref_formula><tex Notation=\"TeX\">$_{0.7}{\\hbox {Ga}}_{0.3}$<\/tex><\/ref_formula>As MHEMTs with <ref_formula><tex Notation=\"TeX\">$g_{m}(\\max)&#x003E;$<\/tex><\/ref_formula> 2.7 mS\/<ref_formula><tex Notation=\"TeX\">$\\mu$ <\/tex><\/ref_formula>m","author":"kim","year":"2011","journal-title":"IEEE Int Electron Devices Meeting Tech Dig"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.73.783"},{"key":"ref8","author":"joannopoulus","year":"2008","journal-title":"Photonic Crystals Molding the Flow of Light"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms1740"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1038\/nphoton.2009.32"},{"key":"ref9","author":"cai","year":"2009","journal-title":"Optical Metamaterials Fundamentals and Applications"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.279"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1063\/1.98305"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.101.146805"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.98.136805"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/16.887014"},{"key":"ref41","doi-asserted-by":"crossref","first-page":"1271","DOI":"10.1021\/nl903868w","article-title":"Emerging photoluminescence in monolayer MoS<ref_formula><tex Notation=\"TeX\">$_{2}$<\/tex> <\/ref_formula>","volume":"10","author":"splendiani","year":"2010","journal-title":"Nano Lett"},{"key":"ref44","first-page":"485","author":"muller","year":"2003","journal-title":"Device Electronics for Integrated Circuits"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2005.857725"},{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.1038\/nature08105"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.74.161403"},{"key":"ref71","author":"fang","year":"2012","journal-title":"Carrier transport in graphene graphene nanoribbons and GaN HEMTs"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.74.041403"},{"key":"ref76","doi-asserted-by":"publisher","DOI":"10.1109\/DRC.2010.5551882"},{"key":"ref77","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.901273"},{"key":"ref74","doi-asserted-by":"crossref","first-page":"715","DOI":"10.1021\/nl9039636","article-title":"Graphene field-effect transistors with high on\/off current ratio and large transport band gap at room temperature","volume":"10","author":"xia","year":"2010","journal-title":"Nano Lett"},{"key":"ref75","doi-asserted-by":"crossref","first-page":"112106-1","DOI":"10.1063\/1.2983744","article-title":"Zener tunneling in semionducting nanotube and graphene nanoribbon p-n junctions","volume":"93","author":"jena","year":"2008","journal-title":"Appl Phys Lett"},{"key":"ref78","first-page":"178","article-title":"Germanium-source tunnel field-effect transistors with record high Ion\/Ioff","author":"kim","year":"2009","journal-title":"Proc Very Large Scale Integration Tech Symp"},{"key":"ref79","first-page":"163","article-title":"Impact of SOI,<ref_formula><tex Notation=\"TeX\">${\\hbox {Si}}_{1-{\\rm x}}{\\hbox {Ge}}_{\\rm x}{\\hbox {OI}}$<\/tex><\/ref_formula> and GeOI substrates on CMOS compatible tunnel FET performance","author":"mayer","year":"2008","journal-title":"IEEE Int Electron Device Meeting Tech Dig"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1021\/nl1022139"},{"key":"ref62","first-page":"13107-1","article-title":"Transistors with chemically synthesized layered semiconductor WS<ref_formula><tex Notation=\"TeX\"> $_{2}$<\/tex><\/ref_formula> exhibiting 10<ref_formula><tex Notation=\"TeX\">$^{5}$<\/tex><\/ref_formula> room temperature modulation and ambipolar behavior","volume":"101","author":"hwang","year":"2012","journal-title":"Appl Phys Lett"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201104798"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.48.10583"},{"key":"ref64","doi-asserted-by":"crossref","DOI":"10.1038\/35010088","article-title":"High-mobility, low-power thin-film transistors based on multilayer MoS<ref_formula> <tex Notation=\"TeX\">$_{2}$<\/tex><\/ref_formula> crystals","author":"kim","year":"0","journal-title":"Nature Commun"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1098\/rspa.1934.0116"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1021\/jp040627u"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4757-0576-8"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1002\/0470068329"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1002\/0470068329"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2010.2070470"},{"key":"ref1","first-page":"88","author":"riordan","year":"1998","journal-title":"Crystal Fire"},{"key":"ref95","doi-asserted-by":"publisher","DOI":"10.1063\/1.3528338"},{"key":"ref94","doi-asserted-by":"publisher","DOI":"10.1063\/1.3431661"},{"key":"ref93","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2186577"},{"key":"ref92","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2045339"},{"key":"ref91","doi-asserted-by":"crossref","first-page":"3222","DOI":"10.1109\/TED.2010.2079250","article-title":"On the possibility of obtaining MOSFET-like performance and sub-60-mV\/dec swing in 1D broken-gap tunnel transistors","author":"koswatta","year":"2010","journal-title":"IEEE Int Electron Device Meeting Tech Dig"},{"key":"ref90","doi-asserted-by":"publisher","DOI":"10.1063\/1.3140505"},{"key":"ref102","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.80.155453"},{"key":"ref98","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/18\/4\/044015"},{"key":"ref99","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.10.486"},{"key":"ref96","author":"agarwal","year":"0","journal-title":"Pronounced effect of pn-junction dimensionality on tunnel switch sharpness"},{"key":"ref97","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.6.57"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.98.126405"},{"key":"ref11","doi-asserted-by":"crossref","first-page":"1600","DOI":"10.1126\/science.1187597","article-title":"It's time to reinvent the transistor!","volume":"327","author":"theis","year":"2010","journal-title":"Science"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1038\/nature10679"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2010.2066531"},{"key":"ref14","first-page":"38","article-title":"MEMS switches for low-power logic","author":"king","year":"2012","journal-title":"IEEE Spectrum"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2002.1175835"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.2720640"},{"key":"ref82","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2179915"},{"key":"ref17","doi-asserted-by":"crossref","first-page":"405","DOI":"10.1021\/nl071804g","article-title":"Use of negative capacitance to provide voltage amplification for low power nanoscale devices","volume":"8","author":"salahuddin","year":"2008","journal-title":"Nano Lett"},{"key":"ref81","first-page":"9","article-title":"Reduce IC power consumption by <ref_formula><tex Notation=\"TeX\">$&#x003E;10\\times$<\/tex><\/ref_formula> with a green transistor?","author":"hu","year":"2009","journal-title":"IEEE Device Res Conf Tech Dig"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1063\/1.4704391"},{"key":"ref84","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2028248"},{"key":"ref19","doi-asserted-by":"crossref","first-page":"666","DOI":"10.1126\/science.1102896","article-title":"Electric field effect in atomically thin carbon films","volume":"306","author":"novoselov","year":"2004","journal-title":"Science"},{"key":"ref83","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2175898"},{"key":"ref80","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.93.196805"},{"key":"ref89","doi-asserted-by":"crossref","first-page":"768","DOI":"10.1126\/science.1170335","article-title":"N-doping of graphene through electrothermal reactions with ammonia","volume":"324","author":"wang","year":"2009","journal-title":"Science"},{"key":"ref85","doi-asserted-by":"publisher","DOI":"10.1021\/nn205106z"},{"key":"ref86","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.200723528"},{"key":"ref87","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2005650"},{"key":"ref88","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2006.52"}],"container-title":["Proceedings of the IEEE"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/5\/6532325\/06513300.pdf?arnumber=6513300","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,29]],"date-time":"2021-11-29T20:23:19Z","timestamp":1638217399000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6513300\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,6]]},"references-count":102,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2013,6]]}},"URL":"https:\/\/doi.org\/10.1109\/jproc.2013.2253435","relation":{},"ISSN":["0018-9219"],"issn-type":[{"value":"0018-9219","type":"print"}],"subject":[],"published":{"date-parts":[[2013,6]]}}}