{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,6]],"date-time":"2026-06-06T06:09:47Z","timestamp":1780726187394,"version":"3.54.1"},"reference-count":29,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"10","license":[{"start":{"date-parts":[[2013,10,1]],"date-time":"2013-10-01T00:00:00Z","timestamp":1380585600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Proc. IEEE"],"published-print":{"date-parts":[[2013,10]]},"DOI":"10.1109\/jproc.2013.2274930","type":"journal-article","created":{"date-parts":[[2013,8,19]],"date-time":"2013-08-19T18:01:29Z","timestamp":1376935289000},"page":"2221-2228","source":"Crossref","is-referenced-by-count":28,"title":["GaN Substrate Technologies for Optical Devices"],"prefix":"10.1109","volume":"101","author":[{"given":"Takao","family":"Nakamura","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kensaku","family":"Motoki","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","year":"2010","journal-title":"Sumitomo Electric announces the world?s first 6-inch GaN substrates for white LED applications"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.39.L647"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1002\/pssc.200303324"},{"key":"ref13","first-page":"832","article-title":"Extremely long lifetime blue-violet laser diode grown homoepitaxially on GaN substrates","author":"matsumoto","year":"2002","journal-title":"Ext Abstr Int Conf Solid State Devices Mater"},{"key":"ref14","year":"2010","journal-title":"Sumitomo Electric and Soitec announce collaboration on development of engineered GaN substrates"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.2.062201"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.3206739"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1063\/1.3078818"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.1.091102"},{"key":"ref19","doi-asserted-by":"crossref","first-page":"41002","DOI":"10.1143\/APEX.2.041002","article-title":"Misfit Strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN","volume":"2","author":"fishcer","year":"2009","journal-title":"Appl Phys Exp"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.5.082103"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.38.L184"},{"key":"ref27","doi-asserted-by":"crossref","DOI":"10.1143\/APEX.5.082102","article-title":"High power (over 100 mW) green laser diodes on semipolar {20?21} GaN substrates operating at wavelength beyond 530 nm","volume":"5","author":"takagi","year":"2012","journal-title":"Appl Phys Exp"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.120688"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.40.L140"},{"key":"ref29","article-title":"Recent results of blue and green InGaN laser diodes for laser projection","volume":"7953","author":"lutgen","year":"2011","journal-title":"Proc SPIE?Int Soc Opt Eng"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/S0022-0248(97)00072-9"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.jcrysgro.2007.03.038"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/S0022-0248(01)02078-4"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.30.L1705"},{"key":"ref9","year":"2010","journal-title":"Sumitomo Electric announces large scale production of the world's first 2-inch semipolar\/nonpolar GaN substrates for green lasers"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.96549"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.1.011102"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.46.L960"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1063\/1.3089573"},{"key":"ref24","doi-asserted-by":"crossref","first-page":"659l","DOI":"10.1143\/JJAP.45.L659","article-title":"Blue, green, amber InGaN\/GaN light-emitting diodes on semipolar {11?22} GaN bulk substrates","volume":"45","author":"funato","year":"2006","journal-title":"Jpn J Appl Phys"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.44.L173"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.2.092101"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.2.082101"}],"container-title":["Proceedings of the IEEE"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/5\/6600788\/06582662.pdf?arnumber=6582662","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,29]],"date-time":"2021-11-29T20:23:22Z","timestamp":1638217402000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6582662\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,10]]},"references-count":29,"journal-issue":{"issue":"10"},"URL":"https:\/\/doi.org\/10.1109\/jproc.2013.2274930","relation":{},"ISSN":["0018-9219","1558-2256"],"issn-type":[{"value":"0018-9219","type":"print"},{"value":"1558-2256","type":"electronic"}],"subject":[],"published":{"date-parts":[[2013,10]]}}}