{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,23]],"date-time":"2026-08-23T15:21:06Z","timestamp":1787498466369,"version":"build-2736575974"},"reference-count":211,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"8","license":[{"start":{"date-parts":[[2015,8,1]],"date-time":"2015-08-01T00:00:00Z","timestamp":1438387200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"DOI":"10.13039\/100000183","name":"Army Research Office","doi-asserted-by":"publisher","award":["W911NF-14-1-0669"],"award-info":[{"award-number":["W911NF-14-1-0669"]}],"id":[{"id":"10.13039\/100000183","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000181","name":"Air Force Office of Scientific Research","doi-asserted-by":"publisher","award":["FA9550-12-1-0189"],"award-info":[{"award-number":["FA9550-12-1-0189"]}],"id":[{"id":"10.13039\/100000181","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000209","name":"National Academy of Sciences","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000209","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Proc. IEEE"],"published-print":{"date-parts":[[2015,8]]},"DOI":"10.1109\/jproc.2015.2431914","type":"journal-article","created":{"date-parts":[[2015,7,15]],"date-time":"2015-07-15T14:55:06Z","timestamp":1436972106000},"page":"1289-1310","source":"Crossref","is-referenced-by-count":345,"title":["Mott Memory and Neuromorphic Devices"],"prefix":"10.1109","volume":"103","author":[{"family":"You Zhou","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shriram","family":"Ramanathan","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref170","doi-asserted-by":"publisher","DOI":"10.1147\/rd.521.0199"},{"key":"ref172","doi-asserted-by":"publisher","DOI":"10.1145\/1654059.1654124"},{"key":"ref171","doi-asserted-by":"publisher","DOI":"10.1109\/ICASSP.2013.6639343"},{"key":"ref174","doi-asserted-by":"crossref","first-page":"668","DOI":"10.1126\/science.1254642","article-title":"A million spiking-neuron integrated circuit with a scalable communication network and interface","volume":"345","author":"merolla","year":"2014","journal-title":"Science"},{"key":"ref173","doi-asserted-by":"publisher","DOI":"10.1109\/TNNLS.2012.2191795"},{"key":"ref176","doi-asserted-by":"publisher","DOI":"10.1016\/j.jneumeth.2012.03.001"},{"key":"ref175","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/24\/38\/382001"},{"key":"ref178","doi-asserted-by":"publisher","DOI":"10.1113\/jphysiol.1952.sp004764"},{"key":"ref177","doi-asserted-by":"publisher","DOI":"10.1021\/nl203687n"},{"key":"ref168","doi-asserted-by":"publisher","DOI":"10.1364\/OE.17.018330"},{"key":"ref169","doi-asserted-by":"publisher","DOI":"10.1109\/2.485891"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1038\/nature13865"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.87.195106"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.94.026404"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.35.873"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.10.1801"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.95.196404"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.85.045109"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.97.116402"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.78.115103"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.71.085109"},{"key":"ref181","doi-asserted-by":"publisher","DOI":"10.1080\/00207216908938173"},{"key":"ref180","doi-asserted-by":"publisher","DOI":"10.1109\/JRPROC.1962.288235"},{"key":"ref185","doi-asserted-by":"publisher","DOI":"10.1109\/16.543035"},{"key":"ref184","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms3072"},{"key":"ref183","doi-asserted-by":"crossref","first-page":"10?464","DOI":"10.1523\/JNEUROSCI.18-24-10464.1998","article-title":"Synaptic modifications in cultured hippocampal neurons: Dependence on spike timing, synaptic strength, and postsynaptic cell type","volume":"18","author":"bi","year":"1998","journal-title":"J Neurosci"},{"key":"ref182","doi-asserted-by":"crossref","first-page":"213","DOI":"10.1126\/science.275.5297.213","article-title":"Regulation of synaptic efficacy by coincidence of postsynaptic APs and EPSPs","volume":"275","author":"markram","year":"1997","journal-title":"Science"},{"key":"ref189","doi-asserted-by":"publisher","DOI":"10.1038\/nature06119"},{"key":"ref188","doi-asserted-by":"crossref","first-page":"1566","DOI":"10.1126\/science.1221561","article-title":"Breaking the speed limits of phase-change memory","volume":"336","author":"loke","year":"2012","journal-title":"Science"},{"key":"ref187","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.2.064003"},{"key":"ref186","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms3676"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.73.3042"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.107.016401"},{"key":"ref179","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3510"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.78.075115"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/9\/39\/005"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1146\/annurev-matsci-070813-113315"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2803"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1016\/0022-4596(71)90091-0"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4148"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.72.3389"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.11.4383"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.41.4993"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.105.056404"},{"key":"ref154","doi-asserted-by":"publisher","DOI":"10.1016\/0022-0248(72)90035-8"},{"key":"ref153","doi-asserted-by":"publisher","DOI":"10.1063\/1.1831560"},{"key":"ref156","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201004497"},{"key":"ref155","doi-asserted-by":"publisher","DOI":"10.1109\/MMM.2014.2332422"},{"key":"ref150","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.917109"},{"key":"ref152","article-title":"Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust ${\\hbox {HfO}}_{2}$ based RRAM","author":"lee","year":"0","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref151","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2012522"},{"key":"ref146","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/22\/25\/254002"},{"key":"ref147","first-page":"587","article-title":"Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses","author":"baek","year":"0","journal-title":"IEDM Tech Dig IEEE Int Electron Devices Meeting"},{"key":"ref148","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4419060"},{"key":"ref149","article-title":"Current compliance-free resistive switching in nonstoichiometric ${\\hbox {CeO}}_{\\rm x}$ films for nonvolatile memory application","author":"liu","year":"0","journal-title":"Proc IEEE Int Memory Workshop"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1006\/jssc.1996.0087"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.84.2666"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.90.137202"},{"key":"ref56","article-title":"Structural and magnetic aspects of the metal-insulator transition in ${\\hbox {Ca}}_{2-{\\rm x}}{\\hbox {Sr}}_{\\rm x}{\\hbox {RuO}}_{4}$","volume":"63","author":"friedt","year":"2001","journal-title":"Phys Rev B"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1126\/science.1145374"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1021\/nl900841k"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1021\/nl402716d"},{"key":"ref52","author":"kung","year":"1989","journal-title":"Transition Metal Oxides Surface Chemistry and Catalysis"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1126\/science.1147724"},{"key":"ref167","doi-asserted-by":"publisher","DOI":"10.1364\/OE.18.001330"},{"key":"ref166","doi-asserted-by":"publisher","DOI":"10.1364\/OE.19.021211"},{"key":"ref165","doi-asserted-by":"crossref","first-page":"1518","DOI":"10.1126\/science.1176580","article-title":"Memory metamaterials","volume":"325","author":"driscoll","year":"2009","journal-title":"Science"},{"key":"ref164","doi-asserted-by":"publisher","DOI":"10.1063\/1.3187531"},{"key":"ref163","doi-asserted-by":"publisher","DOI":"10.1007\/978-94-007-5863-6"},{"key":"ref162","first-page":"735","article-title":"Vanadium dioxide ( ${\\hbox {VO}}_{2}$) is also a ferroelectric: Properties from memory structures","author":"lee","year":"0","journal-title":"Proc 11th IEEE Conf Nanotechnol"},{"key":"ref161","first-page":"439","article-title":"A new single element phase transition memory","author":"kim","year":"0","journal-title":"Proc 10th IEEE Conf Nanotechnol"},{"key":"ref160","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.82.205101"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.87.237401"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/0022-4596(90)90201-8"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2229457"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.70.161102"},{"key":"ref8","year":"2013","journal-title":"International Technology Roadmap for Semiconductors"},{"key":"ref159","doi-asserted-by":"publisher","DOI":"10.1016\/0375-9601(75)90842-7"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/23\/21\/215202"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.113.216401"},{"key":"ref157","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2188989"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1146\/annurev-matsci-062910-100347"},{"key":"ref158","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.17.1286"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.113.216402"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.109.166406"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1039\/C4CP01551G"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1063\/1.4862197"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.98.196406"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.97.266401"},{"key":"ref44","article-title":"Insulator to correlated metal transition in ${\\hbox {V}}_{1-{\\rm x}}{\\hbox {Mo}}_{\\rm x}{\\hbox {O}}_{2}$","volume":"79","author":"holman","year":"2009","journal-title":"Phys Rev B"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.77.235401"},{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2188989"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201104669"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1063\/1.1653835"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.78.033106"},{"key":"ref76","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2009"},{"key":"ref77","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.95.266403"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2013.04.032"},{"key":"ref75","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.1970.1066920"},{"key":"ref78","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.71.045305"},{"key":"ref79","doi-asserted-by":"publisher","DOI":"10.1134\/1.1482750"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1063\/1.368376"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2084"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1038\/40363"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.83.5555"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1063\/1.4721520"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1109\/PROC.1963.2339"},{"key":"ref66","doi-asserted-by":"crossref","first-page":"223","DOI":"10.1109\/PROC.1963.1689","article-title":"a new negative-resistance device","volume":"51","author":"geppert","year":"1963","journal-title":"Proceedings of the IEEE"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1063\/1.4803688"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2023"},{"key":"ref69","doi-asserted-by":"crossref","first-page":"432","DOI":"10.1109\/T-ED.1969.16773","article-title":"thermal filaments in vanadium dioxide","volume":"16","author":"berglund","year":"1969","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref197","doi-asserted-by":"crossref","first-page":"1127","DOI":"10.1021\/nl4044828","article-title":"Ultrafast phase transition via catastrophic phonon collapse driven by plasmonic hot-electron injection","volume":"14","author":"appavoo","year":"2014","journal-title":"Nano Lett"},{"key":"ref198","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2005.12.137"},{"key":"ref199","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.76.035104"},{"key":"ref193","doi-asserted-by":"crossref","DOI":"10.1103\/PhysRevLett.99.116401","article-title":"Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in ${\\hbox {VO}}_{2}$","volume":"99","author":"k\u00fcbler","year":"2007","journal-title":"Phys Rev Lett"},{"key":"ref194","doi-asserted-by":"publisher","DOI":"10.1063\/1.2830664"},{"key":"ref195","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.97.266401"},{"key":"ref196","doi-asserted-by":"publisher","DOI":"10.1038\/nature11231"},{"key":"ref95","doi-asserted-by":"publisher","DOI":"10.1063\/1.121999"},{"key":"ref94","doi-asserted-by":"publisher","DOI":"10.1063\/1.3624896"},{"key":"ref190","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.107.066403"},{"key":"ref93","article-title":"Mechanism and observation of Mott transition in ${\\hbox {VO}}_{2}$-based two- and three-terminal devices","volume":"6","author":"hyun-tak","year":"2004","journal-title":"New J Phys"},{"key":"ref191","doi-asserted-by":"publisher","DOI":"10.1063\/1.112974"},{"key":"ref92","doi-asserted-by":"publisher","DOI":"10.1080\/10408436.2012.719131"},{"key":"ref192","doi-asserted-by":"publisher","DOI":"10.1063\/1.116429"},{"key":"ref91","doi-asserted-by":"crossref","first-page":"3648","DOI":"10.1021\/nl401510p","article-title":"Resistive switching at the nanoscale in the Mott insulator compound GaTa $_4$Se $_8$","volume":"13","author":"dubost","year":"2013","journal-title":"Nano Lett"},{"key":"ref90","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201301113"},{"key":"ref98","doi-asserted-by":"publisher","DOI":"10.1016\/j.electacta.2006.03.016"},{"key":"ref99","doi-asserted-by":"publisher","DOI":"10.1039\/c3cp50755f"},{"key":"ref96","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.78.1185"},{"key":"ref97","doi-asserted-by":"publisher","DOI":"10.1126\/science.1182541"},{"key":"ref82","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201301113"},{"key":"ref81","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/12\/41\/310"},{"key":"ref84","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.110.056601"},{"key":"ref83","doi-asserted-by":"publisher","DOI":"10.1038\/srep02536"},{"key":"ref80","doi-asserted-by":"publisher","DOI":"10.1063\/1.3050464"},{"key":"ref89","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201002521"},{"key":"ref85","doi-asserted-by":"publisher","DOI":"10.1063\/1.3654121"},{"key":"ref86","doi-asserted-by":"publisher","DOI":"10.1007\/s10853-009-3442-7"},{"key":"ref87","article-title":"Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO $_2$ crystal","volume":"103","author":"mun","year":"2013","journal-title":"Appl Phys Lett"},{"key":"ref88","doi-asserted-by":"publisher","DOI":"10.1063\/1.4871806"},{"key":"ref200","doi-asserted-by":"publisher","DOI":"10.1038\/nature11231"},{"key":"ref101","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.106.136809"},{"key":"ref100","doi-asserted-by":"publisher","DOI":"10.1063\/1.3669402"},{"key":"ref209","doi-asserted-by":"publisher","DOI":"10.1021\/je1004609"},{"key":"ref203","article-title":"Unravelling the switching mechanisms in electric field induced insulator-metal transitions in ${\\hbox {VO}}_{2}$ nanobeams","volume":"47","author":"servin","year":"2014","journal-title":"J Phys D Appl Phys"},{"key":"ref204","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2014.71"},{"key":"ref201","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.97.067402"},{"key":"ref202","doi-asserted-by":"publisher","DOI":"10.1016\/j.physb.2005.07.032"},{"key":"ref207","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2011.04.003"},{"key":"ref208","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2010.01.006"},{"key":"ref205","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2163922"},{"key":"ref206","doi-asserted-by":"publisher","DOI":"10.1063\/1.4793537"},{"key":"ref211","doi-asserted-by":"publisher","DOI":"10.1063\/1.3394016"},{"key":"ref210","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.185.1022"},{"key":"ref127","doi-asserted-by":"publisher","DOI":"10.1021\/nl061831r"},{"key":"ref126","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.65.224113"},{"key":"ref125","article-title":"Tuning the electrons at the ${\\hbox {LaAlO}}_{3}{\\hbox {\/SrTiO}}_{3}$ interface: From growth to beyond growth","volume":"22","author":"yan-wu","year":"2013","journal-title":"Chin Phys B"},{"key":"ref124","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.51.14103"},{"key":"ref129","doi-asserted-by":"publisher","DOI":"10.1021\/nl070439q"},{"key":"ref128","doi-asserted-by":"publisher","DOI":"10.1021\/nl9028973"},{"key":"ref130","doi-asserted-by":"publisher","DOI":"10.1021\/jp805537r"},{"key":"ref133","doi-asserted-by":"publisher","DOI":"10.1116\/1.4889999"},{"key":"ref134","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200700251"},{"key":"ref131","doi-asserted-by":"publisher","DOI":"10.1039\/c3tc00844d"},{"key":"ref132","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms5860"},{"key":"ref136","doi-asserted-by":"publisher","DOI":"10.1063\/1.4767473"},{"key":"ref135","doi-asserted-by":"publisher","DOI":"10.1149\/05807.0249ecst"},{"key":"ref138","doi-asserted-by":"publisher","DOI":"10.1109\/CNNA.2012.6331466"},{"key":"ref137","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2174452"},{"key":"ref139","first-page":"10.5.1","article-title":"Nanoscale 10 nm 3D vertical ReRAM and ${\\hbox {NbO}}_{2}$ threshold selector with TiN electrode","author":"cha","year":"0","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref140","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2344105"},{"key":"ref141","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2235816"},{"key":"ref142","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2188989"},{"key":"ref143","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2163697"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1088\/0370-1298\/62\/7\/303"},{"key":"ref144","first-page":"155","article-title":"Ultrathin $<$ 10 nm ${\\hbox {Nb}}_{2}{\\hbox {O}}_{5}{\\hbox {\/NbO}}_{2}$ hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications","author":"kim","year":"0","journal-title":"Proc Symp VLSI Technol"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1088\/0959-5309\/49\/4S\/307"},{"key":"ref145","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2012.2190369"},{"key":"ref109","doi-asserted-by":"publisher","DOI":"10.1063\/1.4758185"},{"key":"ref108","doi-asserted-by":"publisher","DOI":"10.1063\/1.3232241"},{"key":"ref107","doi-asserted-by":"publisher","DOI":"10.1063\/1.3058769"},{"key":"ref106","doi-asserted-by":"publisher","DOI":"10.1021\/nl300741h"},{"key":"ref105","doi-asserted-by":"crossref","DOI":"10.1063\/1.4704689","article-title":"Relaxation dynamics of ionic liquid&#x2014; ${\\hbox {VO}}_{2}$ interfaces and influence in electric double-layer transistors","volume":"111","author":"zhou","year":"2012","journal-title":"J Appl Phys"},{"key":"ref104","doi-asserted-by":"publisher","DOI":"10.1021\/nl303379t"},{"key":"ref103","doi-asserted-by":"publisher","DOI":"10.1038\/nature11296"},{"key":"ref102","doi-asserted-by":"publisher","DOI":"10.1063\/1.3665399"},{"key":"ref111","doi-asserted-by":"publisher","DOI":"10.1063\/1.112476"},{"key":"ref112","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201003241"},{"key":"ref110","doi-asserted-by":"publisher","DOI":"10.1063\/1.2817818"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1126\/science.1150124"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2009.141"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2009.266"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.98.176406"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1038\/144327b0"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.64.094102"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.70.1039"},{"key":"ref118","doi-asserted-by":"publisher","DOI":"10.1007\/BF00361182"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1557\/mrs.2012.49"},{"key":"ref117","doi-asserted-by":"publisher","DOI":"10.1063\/1.1518148"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1088\/0034-4885\/67\/11\/R01"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1080\/14786439808206565"},{"key":"ref119","doi-asserted-by":"publisher","DOI":"10.1116\/1.4804180"},{"key":"ref114","doi-asserted-by":"publisher","DOI":"10.1063\/1.350285"},{"key":"ref113","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.90.024414"},{"key":"ref116","doi-asserted-by":"publisher","DOI":"10.1039\/C2RA22820C"},{"key":"ref115","doi-asserted-by":"publisher","DOI":"10.1063\/1.3579195"},{"key":"ref120","doi-asserted-by":"publisher","DOI":"10.1063\/1.4864404"},{"key":"ref121","doi-asserted-by":"publisher","DOI":"10.1149\/1.2135430"},{"key":"ref122","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2136"},{"key":"ref123","doi-asserted-by":"publisher","DOI":"10.1038\/nature02018"}],"container-title":["Proceedings of the IEEE"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/5\/7158995\/07137616.pdf?arnumber=7137616","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T11:46:55Z","timestamp":1641988015000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7137616\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,8]]},"references-count":211,"journal-issue":{"issue":"8"},"URL":"https:\/\/doi.org\/10.1109\/jproc.2015.2431914","relation":{},"ISSN":["0018-9219","1558-2256"],"issn-type":[{"value":"0018-9219","type":"print"},{"value":"1558-2256","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,8]]}}}