{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,16]],"date-time":"2026-05-16T09:22:11Z","timestamp":1778923331347,"version":"3.51.4"},"reference-count":233,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"7","license":[{"start":{"date-parts":[[2015,7,1]],"date-time":"2015-07-01T00:00:00Z","timestamp":1435708800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"DOI":"10.13039\/100000774","name":"Defense Threat Reduction Agency","doi-asserted-by":"publisher","award":["HDTRA1-11-1-0055"],"award-info":[{"award-number":["HDTRA1-11-1-0055"]}],"id":[{"id":"10.13039\/100000774","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Air Force Research Laboratory Det 8\/RVKVE","award":["FA9452-13-1-0288"],"award-info":[{"award-number":["FA9452-13-1-0288"]}]},{"name":"U.S. Air Force Office of Scientific Research, DEPSCoR,","award":["FA9550-07-1-0546"],"award-info":[{"award-number":["FA9550-07-1-0546"]}]},{"DOI":"10.13039\/100006602","name":"U.S. Air Force Research Laboratory","doi-asserted-by":"crossref","award":["FA9453-08-2-0252"],"award-info":[{"award-number":["FA9453-08-2-0252"]}],"id":[{"id":"10.13039\/100006602","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Proc. IEEE"],"published-print":{"date-parts":[[2015,7]]},"DOI":"10.1109\/jproc.2015.2441752","type":"journal-article","created":{"date-parts":[[2015,6,18]],"date-time":"2015-06-18T18:49:07Z","timestamp":1434653347000},"page":"1004-1033","source":"Crossref","is-referenced-by-count":76,"title":["Reconfigurable Memristive Device Technologies"],"prefix":"10.1109","volume":"103","author":[{"given":"Arthur H.","family":"Edwards","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hugh J.","family":"Barnaby","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kristy A.","family":"Campbell","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Michael N.","family":"Kozicki","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wei","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Matthew J.","family":"Marinella","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref170","doi-asserted-by":"publisher","DOI":"10.1063\/1.4710218"},{"key":"ref172","doi-asserted-by":"publisher","DOI":"10.1063\/1.3271177"},{"key":"ref171","doi-asserted-by":"publisher","DOI":"10.1149\/1.3279689"},{"key":"ref174","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/25\/6\/065002"},{"key":"ref173","doi-asserted-by":"publisher","DOI":"10.1063\/1.3483158"},{"key":"ref176","first-page":"742","article-title":"Investigation of the physical mechanisms governing data-retention","volume":"2013","author":"guy","year":"0","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref175","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2009.01.010"},{"key":"ref178","doi-asserted-by":"publisher","DOI":"10.1021\/nl8037689"},{"key":"ref177","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.49.13611"},{"key":"ref168","doi-asserted-by":"publisher","DOI":"10.1063\/1.2715002"},{"key":"ref169","doi-asserted-by":"publisher","DOI":"10.1063\/1.4745783"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2325531"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201306182"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131572"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1063\/1.373747"},{"key":"ref31","article-title":"The mechanism of electroforming of metal oxide memristive switches","volume":"20","author":"yang","year":"2009","journal-title":"Nanotechnology"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1063\/1.3275426"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2264476"},{"key":"ref36","article-title":"Redox-based resistive switching memories","author":"waser","year":"2013","journal-title":"Nanoelectronics and Information Technology"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1063\/1.2001146"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1063\/1.4823854"},{"key":"ref181","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2008108"},{"key":"ref180","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2006.887640"},{"key":"ref185","doi-asserted-by":"publisher","DOI":"10.1021\/nl203687n"},{"key":"ref184","doi-asserted-by":"publisher","DOI":"10.1021\/nl904092h"},{"key":"ref183","doi-asserted-by":"publisher","DOI":"10.1021\/nl073225h"},{"key":"ref182","doi-asserted-by":"publisher","DOI":"10.1063\/1.93269"},{"key":"ref189","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131654"},{"key":"ref188","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201100507"},{"key":"ref187","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms5232"},{"key":"ref186","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms1737"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3070"},{"key":"ref27","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1007\/s00339-012-7052-x","article-title":"Nitride memristors","volume":"109","author":"choi","year":"2012","journal-title":"Appl Phys A"},{"key":"ref179","doi-asserted-by":"publisher","DOI":"10.1063\/1.3406121"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1149\/1.2742989"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2748"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2010.5703390"},{"key":"ref21","doi-asserted-by":"crossref","DOI":"10.1116\/1.4889999","article-title":"Access devices for 3D crosspoint memory","volume":"32","author":"burr","year":"2014","journal-title":"J Vac Sci Technol B"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201101117"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1063\/1.2945278"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/DRC.2012.6256953"},{"key":"ref25","first-page":"69","article-title":"Field-driven ultrafast sub-ns programming in W\/Al $_{2}{\\hbox {O}}_{3}$\/Ti\/CuTe-based 1T1R CBRAM system","author":"goux","year":"0","journal-title":"Proc Symp VLSI Technol"},{"key":"ref50","doi-asserted-by":"crossref","first-page":"1005","DOI":"10.1109\/LED.2013.2265404","article-title":"Nanometer-scale HfO $_{x}$ RRAM","volume":"34","author":"ziphing","year":"2013","journal-title":"IEEE Electron Device Lett"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1021\/nn401212p"},{"key":"ref154","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.904402"},{"key":"ref153","author":"campbell","year":"0","journal-title":"J Microelectron"},{"key":"ref156","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.2004246"},{"key":"ref155","doi-asserted-by":"publisher","DOI":"10.1063\/1.2903707"},{"key":"ref150","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2012.02.005"},{"key":"ref152","first-page":"1","article-title":"A density functional study of Ag in Ge $_2$Se $_3$","author":"edwards","year":"0","journal-title":"Proc Non-Volatile Memory Technol Symp"},{"key":"ref151","article-title":"Electron self-trapping in Ge $_2$Se $_3$ and its role in Ag and Sn incorporation","volume":"1431","author":"edwards","year":"0","journal-title":"Proc Mater Res Soc Symp"},{"key":"ref146","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2005.846936"},{"key":"ref147","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2005.1609463"},{"key":"ref148","article-title":"Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element","author":"campbell","year":"2008"},{"key":"ref149","doi-asserted-by":"publisher","DOI":"10.1063\/1.3385781"},{"key":"ref59","first-page":"1302","article-title":"Memory-state dependence of random telegraph noise of Ta $_{2}{\\hbox {O}}_{5}$\/TiO $_{2}$ stack ReRAM","volume":"31","author":"terai","year":"2010","journal-title":"IEEE Electron Device Lett"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6479013"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1063\/1.4829900"},{"key":"ref56","doi-asserted-by":"crossref","first-page":"1183","DOI":"10.1109\/TED.2012.2184544","article-title":"On the switching parameter variation of metal oxide RRAM—Part II: Model corroboration and device design strategy","volume":"59","author":"shimeng","year":"2012","journal-title":"IEEE Trans Electron Devices"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1063\/1.3524521"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2012.6213635"},{"key":"ref53","year":"0","journal-title":"Panasonic starts world's first mass production of ReRAM mounted microcomputers"},{"key":"ref52","first-page":"210","article-title":"A 130.7 mm $^2$ 2-layer 32 Gb ReRAM memory device in 24 nm technology","volume":"2013","author":"liu","year":"0","journal-title":"Proc IEEE Int Solid-State Circuits Conf"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2202319"},{"key":"ref167","article-title":"Bipolar resistance switching in high-performance Cu\/ZnO: Mn\/Pt nonvolatile memories: Active region and influence of Joule heating","volume":"12","author":"yang","year":"2010","journal-title":"New J Phys"},{"key":"ref166","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2008.160"},{"key":"ref165","doi-asserted-by":"publisher","DOI":"10.1063\/1.2712777"},{"key":"ref164","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.201004086"},{"key":"ref163","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4419064"},{"key":"ref162","doi-asserted-by":"publisher","DOI":"10.1039\/C3TC31969E"},{"key":"ref161","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.5.085803"},{"key":"ref160","article-title":"Impact of Cu electrode on switching behavior in a Cu\/HfO $_{2}$\/Pt structure and resultant Cu Ion diffusion","volume":"20","author":"haemori","year":"2009","journal-title":"Appl Phys Exp"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2147791"},{"key":"ref3","doi-asserted-by":"crossref","DOI":"10.1088\/0268-1242\/29\/10\/104001","article-title":"If it's pinched it's a memristor","volume":"29","author":"chua","year":"2014","journal-title":"Semicond Sci Technol"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2012.240"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200900375"},{"key":"ref159","first-page":"3.7.1","article-title":"Quantized conductive filament formed by limited Cu source in Sub-5 nm Era","volume":"2011","author":"park","year":"0","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1116\/1.3301579"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/j.mser.2014.06.002"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131650"},{"key":"ref157","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2032566"},{"key":"ref158","doi-asserted-by":"crossref","first-page":"117","DOI":"10.1109\/LED.2009.2036276","article-title":"Resistive switching properties of Au\/ZrO $_{2}$\/Ag structure for low-voltage nonvolatile memory applications","volume":"31","author":"li","year":"2010","journal-title":"IEEE Electron Device Lett"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.48.080001"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1149\/06414.0049ecst"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1021\/nn405827t"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/22\/50\/505402"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/22\/48\/485203"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2011.5937942"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2012.2215714"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2202320"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2013.2252057"},{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2008.08.004"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1063\/1.1604172"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.86.3650"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1002\/cplu.201402133"},{"key":"ref76","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.50.209"},{"key":"ref77","first-page":"3289","article-title":"Threshold switching in chalcogenide-glass thin-films","volume":"50","author":"adler","year":"1978","journal-title":"J Appl Phys"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.1016\/0022-3093(72)90188-3"},{"key":"ref75","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(75)90139-2"},{"key":"ref78","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.74.035206"},{"key":"ref79","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.35.1293"},{"key":"ref60","first-page":"587","article-title":"Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses","author":"baek","year":"0","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2131631"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.2010584"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1109\/NVMT.2008.4731194"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724599"},{"key":"ref65","first-page":"260","article-title":"A 0.13 $\\mu$m 64Mb multi-layered conductive metal-oxide memory","author":"chevallier","year":"0","journal-title":"IEEE Int Solid-State Circuits Conf Dig Tech Papers"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.21.1450"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1063\/1.359779"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1063\/1.359780"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1063\/1.4884604"},{"key":"ref197","first-page":"268","article-title":"Nanoscale (10 nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode","author":"cha","year":"0","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref198","first-page":"20.8.1","article-title":"A non-linear ReRAM cell with sub-1 uA ultralow operating current for high density vertical resistive memory (VRRAM)","author":"park","year":"0","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref199","doi-asserted-by":"publisher","DOI":"10.1039\/C4MH00067F"},{"key":"ref193","doi-asserted-by":"publisher","DOI":"10.1038\/srep05780"},{"key":"ref194","first-page":"264","article-title":"3D vertical TaO $_{x}$\/TiO $_{2}$ RRAM with over $10^{3}$ self-rectifying ratio and sub-uA operating current","volume":"2013","author":"hsu","year":"0","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref195","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2319814"},{"key":"ref196","first-page":"20.7.1","article-title":"HfO $_{x}$ based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector","author":"chen","year":"0","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref95","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201202383"},{"key":"ref94","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.201200378"},{"key":"ref190","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2009.09.034"},{"key":"ref93","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4418973"},{"key":"ref191","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201002575"},{"key":"ref92","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2003.1269271"},{"key":"ref192","first-page":"260","article-title":"Ultra high density 3D via RRAM in pure 28 nm CMOS process","volume":"2013","author":"hsieh","year":"0","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref91","doi-asserted-by":"publisher","DOI":"10.1021\/nl3038097"},{"key":"ref90","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2007.291"},{"key":"ref98","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2010.11.024"},{"key":"ref99","doi-asserted-by":"publisher","DOI":"10.1038\/nature03190"},{"key":"ref96","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/46\/7\/074005"},{"key":"ref97","first-page":"186","article-title":"Time discrete voltage sensing and iterative programming control for a 4F2 multilevel CBRAM","author":"schr\u00f6gmeier","year":"0","journal-title":"Proc IEEE Symp VLSI Circuits"},{"key":"ref82","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2004.1419330"},{"key":"ref81","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.28.813"},{"key":"ref84","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2005.10.013"},{"key":"ref83","doi-asserted-by":"publisher","DOI":"10.1063\/1.2931951"},{"key":"ref80","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.37.1504"},{"key":"ref89","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2001.979636"},{"key":"ref85","doi-asserted-by":"publisher","DOI":"10.1088\/1742-6596\/253\/1\/012014"},{"key":"ref86","doi-asserted-by":"crossref","first-page":"1566","DOI":"10.1126\/science.1221561","article-title":"Breaking the speed limits of phase-change memory","volume":"336","author":"loke","year":"2012","journal-title":"Science"},{"key":"ref87","doi-asserted-by":"publisher","DOI":"10.1063\/1.2963196"},{"key":"ref88","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2007.369948"},{"key":"ref200","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2006.07.028"},{"key":"ref101","doi-asserted-by":"publisher","DOI":"10.1063\/1.2989132"},{"key":"ref100","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2008.4633016"},{"key":"ref209","doi-asserted-by":"publisher","DOI":"10.1016\/j.msec.2009.12.010"},{"key":"ref203","doi-asserted-by":"publisher","DOI":"10.1016\/j.orgel.2007.04.002"},{"key":"ref204","doi-asserted-by":"publisher","DOI":"10.1039\/c3tc30575a"},{"key":"ref201","article-title":"Electrical characteristics of an organic bistable device using an Al\/Alq $_{3}$\/nanostructured NoO $_{3}$\/Alq $_{3}$\/ ${\\rm p}^{+}$–Si structure","volume":"96","author":"cheng","year":"2010","journal-title":"Appl Phys Lett"},{"key":"ref202","doi-asserted-by":"publisher","DOI":"10.1063\/1.1473234"},{"key":"ref207","doi-asserted-by":"publisher","DOI":"10.1021\/ja307933t"},{"key":"ref208","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.52.05DA05"},{"key":"ref205","doi-asserted-by":"publisher","DOI":"10.1063\/1.4887010"},{"key":"ref206","doi-asserted-by":"publisher","DOI":"10.1021\/ja106945v"},{"key":"ref211","doi-asserted-by":"publisher","DOI":"10.1063\/1.3529455"},{"key":"ref210","doi-asserted-by":"publisher","DOI":"10.1134\/S1063739713010022"},{"key":"ref212","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4021"},{"key":"ref213","doi-asserted-by":"publisher","DOI":"10.1021\/jp409257v"},{"key":"ref214","doi-asserted-by":"publisher","DOI":"10.1039\/c4cc01540a"},{"key":"ref215","author":"schwank","year":"1994","journal-title":"Basic mechanisms of radiation effects in the natural space environment"},{"key":"ref216","author":"dressendorfer","year":"1999","journal-title":"Basic Mechanisms for the New Millennium"},{"key":"ref217","doi-asserted-by":"publisher","DOI":"10.1063\/1.4862561"},{"key":"ref218","doi-asserted-by":"publisher","DOI":"10.1016\/j.jhazmat.2013.11.050"},{"key":"ref219","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.201350188"},{"key":"ref220","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2011.2168827"},{"key":"ref222","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2014.2304634"},{"key":"ref221","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2014.2321833"},{"key":"ref229","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2090157"},{"key":"ref228","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2010.2045768"},{"key":"ref227","doi-asserted-by":"publisher","DOI":"10.1016\/j.jnoncrysol.2012.12.031"},{"key":"ref226","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2014.2358235"},{"key":"ref225","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2295801"},{"key":"ref224","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2013.2286318"},{"key":"ref223","first-page":"1","article-title":"Total ionizing dose effect of -ray radiation on the switching characteristics and filament stability of HfO $_{x}$ resistive random access memory","volume":"104","author":"fang","year":"2014","journal-title":"Appl Phys Lett"},{"key":"ref127","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201102597"},{"key":"ref126","doi-asserted-by":"publisher","DOI":"10.1016\/0022-3093(90)90262-K"},{"key":"ref125","doi-asserted-by":"publisher","DOI":"10.1016\/0022-3093(87)90296-1"},{"key":"ref124","doi-asserted-by":"publisher","DOI":"10.1116\/1.583346"},{"key":"ref129","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2177803"},{"key":"ref128","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/23\/14\/145703"},{"key":"ref130","doi-asserted-by":"publisher","DOI":"10.1063\/1.2793686"},{"key":"ref133","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2005.10.019"},{"key":"ref134","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2016019"},{"key":"ref131","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1098(94)90923-7"},{"key":"ref132","author":"kostzeniewski","year":"1997","journal-title":"The Electrochemical Double Layer"},{"key":"ref232","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2199074"},{"key":"ref233","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2008.920425"},{"key":"ref230","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2012.6241871"},{"key":"ref231","first-page":"299","article-title":"Drift-driven investigation of phase distribution in phase-change memories","author":"braga","year":"0","journal-title":"Proc 21st IEEE Int Conf Electron Circ Syst (ICECS)"},{"key":"ref136","doi-asserted-by":"publisher","DOI":"10.1063\/1.3077310"},{"key":"ref135","doi-asserted-by":"publisher","DOI":"10.1063\/1.2777170"},{"key":"ref138","doi-asserted-by":"publisher","DOI":"10.1063\/1.3675870"},{"key":"ref137","author":"milchev","year":"2002","journal-title":"Electrocrystallization"},{"key":"ref139","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2012.6213666"},{"key":"ref140","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2009.09.021"},{"key":"ref141","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2009.2035147"},{"key":"ref142","first-page":"204c","article-title":"A 0.6 V 8 pJ\/write non-volatile CBRAM macro embedded in a body sensor node for ultra low energy applications","author":"gilbert","year":"0","journal-title":"Proc Symp VLSI Circuits"},{"key":"ref143","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.897172"},{"key":"ref144","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2024623"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1007\/s00339-011-6264-9"},{"key":"ref145","first-page":"71","article-title":"Conductive bridging memory development from single cells to 2 Mbit memory arrays","volume":"2007","author":"symanczyk","year":"0","journal-title":"Proc Non-Volatile Memory Technol Symp"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TCT.1971.1083337"},{"key":"ref109","doi-asserted-by":"publisher","DOI":"10.1149\/1.3339449"},{"key":"ref108","doi-asserted-by":"publisher","DOI":"10.1016\/S0022-3093(01)01068-7"},{"key":"ref107","doi-asserted-by":"publisher","DOI":"10.1063\/1.4804983"},{"key":"ref106","doi-asserted-by":"publisher","DOI":"10.1063\/1.322942"},{"key":"ref105","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2013.2241075"},{"key":"ref104","doi-asserted-by":"publisher","DOI":"10.1039\/c3nr01176c"},{"key":"ref103","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/46\/9\/093001"},{"key":"ref102","doi-asserted-by":"publisher","DOI":"10.1016\/j.spmi.2004.03.043"},{"key":"ref111","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2016991"},{"key":"ref112","doi-asserted-by":"publisher","DOI":"10.1111\/j.2041-1294.2012.00093.x"},{"key":"ref110","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2011.01.042"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/22\/28\/289502"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2010.2042041"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ISPASS.2013.6557176"},{"key":"ref13","year":"2013","journal-title":"The International Technology Roadmap for Semiconductors (ITRS)"},{"key":"ref14","doi-asserted-by":"crossref","DOI":"10.1002\/9781118958254.ch13","article-title":"Emerging memory technologies: Assessment and benchmarking","author":"marinella","year":"2014","journal-title":"Emerging Nanoelectronic Devices"},{"key":"ref15","first-page":"830","article-title":"Emerging resistive switching memory technologies: Overview and current status","year":"0","journal-title":"Proc IEEE Int Symp Circ Syst (ISCAS)"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2008.160"},{"key":"ref118","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.78.4422"},{"key":"ref17","article-title":"Engineering nonlinearity into memristors for passive crossbar applications","volume":"100","author":"yang","year":"2012","journal-title":"Appl Phys Lett"},{"key":"ref117","article-title":"Resistance-change devices based on solid electrolytes","author":"kozicki","year":"0","journal-title":"Proc Innovative Mass Storage Technol —Eur Phase Change Ovonic Scie Conf"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2010.5556229"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200900822"},{"key":"ref119","article-title":"Silver-selenide\/chalcogenide glass stack for resistance variable memory","author":"campbell","year":"2006"},{"key":"ref114","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/15\/16\/307"},{"key":"ref113","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.83.3848"},{"key":"ref116","doi-asserted-by":"publisher","DOI":"10.1016\/j.jnoncrysol.2005.11.065"},{"key":"ref115","first-page":"298","article-title":"Applications of programmable resistance changes in metal-doped chalcogenides","author":"kozicki","year":"0","journal-title":"Proc Symp Solid State Ionic Devices"},{"key":"ref120","article-title":"Resistance variable memory device and method of fabrication","author":"campbell","year":"2008"},{"key":"ref121","doi-asserted-by":"publisher","DOI":"10.1109\/IJCNN.2010.5596775"},{"key":"ref122","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/22\/25\/254017"},{"key":"ref123","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2006.09.012"}],"container-title":["Proceedings of the IEEE"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/5\/7128427\/07128486.pdf?arnumber=7128486","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,11]],"date-time":"2023-08-11T15:51:47Z","timestamp":1691769107000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7128486\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,7]]},"references-count":233,"journal-issue":{"issue":"7"},"URL":"https:\/\/doi.org\/10.1109\/jproc.2015.2441752","relation":{},"ISSN":["0018-9219","1558-2256"],"issn-type":[{"value":"0018-9219","type":"print"},{"value":"1558-2256","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,7]]}}}