{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,2]],"date-time":"2025-11-02T20:03:48Z","timestamp":1762113828877,"version":"3.37.3"},"reference-count":70,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"8","license":[{"start":{"date-parts":[[2020,8,1]],"date-time":"2020-08-01T00:00:00Z","timestamp":1596240000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/OAPA.html"},{"start":{"date-parts":[[2020,8,1]],"date-time":"2020-08-01T00:00:00Z","timestamp":1596240000000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/OAPA.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Proc. IEEE"],"published-print":{"date-parts":[[2020,8]]},"DOI":"10.1109\/jproc.2019.2904011","type":"journal-article","created":{"date-parts":[[2020,4,14]],"date-time":"2020-04-14T05:23:21Z","timestamp":1586841801000},"page":"1235-1244","source":"Crossref","is-referenced-by-count":8,"title":["Tunnel-FET Switching Is Governed by Non-Lorentzian Spectral Line Shape"],"prefix":"10.1109","volume":"108","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4602-0771","authenticated-orcid":false,"given":"Sri Krishna","family":"Vadlamani","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3676-6986","authenticated-orcid":false,"given":"Sapan","family":"Agarwal","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"David T.","family":"Limmer","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Steven G.","family":"Louie","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4723-3111","authenticated-orcid":false,"given":"Felix R.","family":"Fischer","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5724-3375","authenticated-orcid":false,"given":"Eli","family":"Yablonovitch","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1017\/CBO9781107337886.008"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2162220"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2734679"},{"key":"ref33","first-page":"16.1.1","article-title":"Prospect of tunneling green transistor for 0.1V CMOS","author":"hu","year":"2010","journal-title":"IEDM Tech Dig"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2574821"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2584983"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2499183"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2497666"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2140322"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2289739"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2010.2070470"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2312939"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.899389"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2207876"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2299337"},{"key":"ref28","first-page":"34.6.1","article-title":"InAs-GaSb\/Si heterojunction tunnel MOSFETs: An alternative to TFETs as energy-efficient switches?","author":"carrillo-nu\u00f1ez","year":"2015","journal-title":"IEDM Tech Dig"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2016.2545978"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409755"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2234078"},{"key":"ref66","doi-asserted-by":"crossref","first-page":"572","DOI":"10.1016\/j.sse.2007.02.001","article-title":"Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices","volume":"51","author":"knoch","year":"2007","journal-title":"Solid-State Electron"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409835"},{"key":"ref67","first-page":"250","article-title":"Discrete state coupled to a finite-width continuum: From the Weisskopf&#x2013;Wigner exponential decay to the Rabi oscillation","author":"cohen-tannoudji","year":"1992","journal-title":"Atom&#x2013;Photon Interactions Basic Process and Appilcations"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2350434"},{"journal-title":"Pronounced effect of pn-junction dimensionality on tunnel switch threshold shape","year":"2011","author":"agarwal","key":"ref69"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1049\/piee.1966.0189"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.92.1324"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1063\/1.2757593"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2009.5331446"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2206789"},{"key":"ref24","first-page":"1","article-title":"Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible Tunnel FET performance","author":"mayer","year":"2008","journal-title":"IEDM Tech Dig"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2000970"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/VTSA.2009.5159285"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2013.2292799"},{"key":"ref50","first-page":"19.1.1","article-title":"Vertical InAs\/GaAsSb\/GaSb tunneling field-effect transistor on Si with S = 48 mV\/decade and Ion = 10 ?A\/?m for Ioff = 1 nA\/?m at VDS = 0.3 V","author":"memisevic","year":"2016","journal-title":"IEDM Tech Dig"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/S3S.2015.7333513"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2764873"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838512"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2368147"},{"key":"ref56","first-page":"13.4.1","article-title":"Near hysteresis-free negative capacitance InGaAs tunnel FETs with enhanced digital and analog figures of merit below VDD = 400 mV","author":"saeidi","year":"2018","journal-title":"IEDM Tech Dig"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2836862"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2702612"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2734943"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7047020"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1038\/nature10679"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/0039-6028(78)90489-2"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2606660"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/EDL.1987.26655"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/S0040-6090(00)00896-8"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1063\/1.117606"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.31.L455"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.114547"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1063\/1.1668321"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2045631"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/1.4866076"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1209\/0295-5075\/14\/1\/013"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.100.206403"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.106.027401"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.37.6963"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.144.582"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.57.1777"},{"key":"ref49","first-page":"19.3.1","article-title":"Hybrid phase-change&#x2014;Tunnel FET (PC-TFET) switch with subthreshold swing <10 mV\/decade and sub-0.1 body factor: Digital and analog benchmarking","author":"casu","year":"2016","journal-title":"IEDM Tech Dig"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.5.594"},{"key":"ref46","first-page":"1","article-title":"Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ? 60 mV\/dec subthreshold slope","author":"krishnamohan","year":"2008","journal-title":"IEDM Tech Dig"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2165331"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1038\/nature15387"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2010.5556195"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.93.196805"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2474147"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6479005"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2258652"}],"container-title":["Proceedings of the IEEE"],"original-title":[],"link":[{"URL":"https:\/\/ieeexplore.ieee.org\/ielam\/5\/9143211\/8688500-aam.pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/5\/9143211\/08688500.pdf?arnumber=8688500","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,4,8]],"date-time":"2022-04-08T18:55:57Z","timestamp":1649444157000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8688500\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,8]]},"references-count":70,"journal-issue":{"issue":"8"},"URL":"https:\/\/doi.org\/10.1109\/jproc.2019.2904011","relation":{},"ISSN":["0018-9219","1558-2256"],"issn-type":[{"type":"print","value":"0018-9219"},{"type":"electronic","value":"1558-2256"}],"subject":[],"published":{"date-parts":[[2020,8]]}}}