{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,2]],"date-time":"2026-06-02T09:22:54Z","timestamp":1780392174535,"version":"3.54.1"},"reference-count":129,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"7","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Proc. IEEE"],"published-print":{"date-parts":[[2021,7]]},"DOI":"10.1109\/jproc.2021.3072170","type":"journal-article","created":{"date-parts":[[2021,4,29]],"date-time":"2021-04-29T19:30:36Z","timestamp":1619724636000},"page":"1253-1275","source":"Crossref","is-referenced-by-count":65,"title":["Wide Bandgap DC\u2013DC Converter Topologies for Power Applications"],"prefix":"10.1109","volume":"109","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-1848-7948","authenticated-orcid":false,"given":"Mohammad","family":"Parvez","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Aaron T.","family":"Pereira","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5592-5268","authenticated-orcid":false,"given":"Nesimi","family":"Ertugrul","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Neil H. E.","family":"Weste","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0945-2674","authenticated-orcid":false,"given":"Derek","family":"Abbott","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3242-8197","authenticated-orcid":false,"given":"Said F.","family":"Al-Sarawi","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1016\/j.rser.2017.07.017"},{"key":"ref38","first-page":"1","article-title":"Comparison of IGBT and SiC MOSFET in resonant application","author":"m\u00e4rz","year":"2018","journal-title":"Proc 20th Eur Conf Power Electron Appl (EPE ECCE Eur )"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2007.907044"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/28.67533"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.1979.1060502"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.1972.349791"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2014.2309937"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2010.2049719"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2009.2030235"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/MIE.2008.923519"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2672986"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2016.2582685"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2010.5433619"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2797940"},{"key":"ref22","first-page":"2506","article-title":"GaN HFET switching characteristics at 350V\/20A and synchronous boost converter performance at 1 MHz","author":"hughes","year":"2012","journal-title":"Proc 27th Annu IEEE Appl Power Electron Conf Expo (APEC)"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2007.911060"},{"key":"ref24","first-page":"1","article-title":"A comprehensive review of DC–DC converter topologies and modulation strategies with recent advances in solar photovoltaic systems","volume":"9","author":"raghavendra","year":"2020","journal-title":"Electronics"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/PEAC.2014.7037871"},{"key":"ref101","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2286639"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2015.7104411"},{"key":"ref100","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2008.4538957"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2009.2036024"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2014.2317653"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.2004.1355682"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1109\/IAS.2002.1042726"},{"key":"ref58","first-page":"1393","article-title":"Power losses and efficiency analysis of multilevel DC-DC converters","volume":"3","author":"pan","year":"2005","journal-title":"Proc 20th Annu IEEE Appl Power Electron Conf Expo (APEC)"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1109\/IPEC.2014.6869824"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2012.2191753"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2252432"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/EPE.2007.4417709"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.2005.1581952"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1109\/EPEC.2017.8286223"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2017.2784570"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2019.2922743"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2014.2327273"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2013.6646999"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2011.2108317"},{"key":"ref8","doi-asserted-by":"crossref","first-page":"655","DOI":"10.1109\/T-ED.1976.18468","article-title":"a historical perspective on the development of mos transistors and related devices","volume":"23","author":"kahng","year":"1976","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2417773"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IFEEC.2013.6687499"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2268900"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2005.869730"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2011.2149543"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1109\/TDEI.2015.004978"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2248168"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2016.2557725"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1016\/j.rser.2009.04.004"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2012.2202128"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2011.2112672"},{"key":"ref127","doi-asserted-by":"publisher","DOI":"10.1109\/SPEEDAM.2018.8445373"},{"key":"ref126","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2017.7930963"},{"key":"ref125","doi-asserted-by":"publisher","DOI":"10.1109\/SPEEDAM.2010.5542022"},{"key":"ref124","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2039026"},{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2003.823248"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.2003.1218269"},{"key":"ref129","doi-asserted-by":"publisher","DOI":"10.3390\/mi10060406"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1109\/63.838097"},{"key":"ref128","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2018.2793300"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2006.880312"},{"key":"ref76","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2005.858259"},{"key":"ref77","doi-asserted-by":"publisher","DOI":"10.1063\/1.5024484"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.1109\/IAS.2005.1518369"},{"key":"ref75","doi-asserted-by":"publisher","DOI":"10.1109\/EPE.2005.219307"},{"key":"ref78","doi-asserted-by":"publisher","DOI":"10.1109\/IECON.2001.975927"},{"key":"ref79","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2010.2102734"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1016\/j.aej.2015.09.004"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2014.6953810"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1109\/7.993249"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1109\/IECON.2014.7049359"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2007.908176"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1109\/CPE.2007.4296566"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1109\/EPE.2005.219209"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1109\/IAS.2002.1042768"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.2004.1355399"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2016.2535387"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1109\/41.605619"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2020.2982707"},{"key":"ref109","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2012.2232308"},{"key":"ref95","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2006.1666136"},{"key":"ref108","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2012.2193144"},{"key":"ref94","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2089493"},{"key":"ref107","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2012.2228505"},{"key":"ref93","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2069566"},{"key":"ref106","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2012.2231098"},{"key":"ref92","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2006.1666135"},{"key":"ref105","doi-asserted-by":"publisher","DOI":"10.1109\/TPEC.2018.8312047"},{"key":"ref91","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2007.06.223"},{"key":"ref104","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2016.2613930"},{"key":"ref90","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2008.4538955"},{"key":"ref103","doi-asserted-by":"publisher","DOI":"10.3390\/ma12101599"},{"key":"ref102","doi-asserted-by":"crossref","first-page":"316","DOI":"10.1109\/75.862226","article-title":"Cascode connected AlGaN\/GaN HEMTs on SiC substrates","volume":"10","author":"green","year":"2000","journal-title":"IEEE Microw Guided Wave Lett"},{"key":"ref111","doi-asserted-by":"publisher","DOI":"10.1002\/9781119480549.ch8"},{"key":"ref112","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2019.2891625"},{"key":"ref110","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2017.2772909"},{"key":"ref98","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2006.874761"},{"key":"ref99","doi-asserted-by":"publisher","DOI":"10.1049\/el:20000557"},{"key":"ref96","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.862708"},{"key":"ref97","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.881054"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1049\/iet-cds.2013.0223"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/PEDS.2015.7203435"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2006.889939"},{"key":"ref13","first-page":"1","article-title":"Normally-off 5A\/1100V GaN-on-silicon device for high voltage applications","author":"boutros","year":"2009","journal-title":"IEDM Tech Dig"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2162393"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2476482"},{"key":"ref118","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2017.2736482"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2019.2948554"},{"key":"ref82","doi-asserted-by":"publisher","DOI":"10.1063\/1.1346622"},{"key":"ref117","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2018.2800533"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1016\/B978-1-4557-3143-5.00020-1"},{"key":"ref81","doi-asserted-by":"publisher","DOI":"10.1109\/AMTA.2008.4763184"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1049\/iet-cds.2013.0220"},{"key":"ref84","first-page":"289","article-title":"New 1200 V IGBT and diode technology with improved controllability for superior performance in drives application","author":"mueller","year":"2018","journal-title":"Proc Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage (VDE PCIM Eur )"},{"key":"ref119","doi-asserted-by":"publisher","DOI":"10.1109\/IEMDC.2017.8002237"},{"key":"ref19","first-page":"221","article-title":"GaN on Si based power devices: An opportunity to significantly impact global energy consumption","volume":"5","author":"briere","year":"2010","journal-title":"CS Mantech"},{"key":"ref83","first-page":"563","article-title":"Evaluations and applications of GaN HEMTs for power electronics","author":"li","year":"2016","journal-title":"Proc IEEE 8th Int Power Electron Motion Control Conf (IPEMC-ECCE Asia)"},{"key":"ref114","doi-asserted-by":"publisher","DOI":"10.1016\/j.rser.2014.08.033"},{"key":"ref113","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.2007.4342378"},{"key":"ref116","doi-asserted-by":"publisher","DOI":"10.1109\/IECON.2007.4460313"},{"key":"ref80","first-page":"1","article-title":"Wide bandgap semiconductors for utility applications","volume":"1","author":"tolbert","year":"2005","journal-title":"Semiconductors"},{"key":"ref115","author":"khan","year":"2012","journal-title":"Power Loss Modeling of Isolated AC\/DC Converter"},{"key":"ref120","doi-asserted-by":"publisher","DOI":"10.1109\/NAPS.2017.8107192"},{"key":"ref89","doi-asserted-by":"publisher","DOI":"10.1109\/DRC.2006.305162"},{"key":"ref121","doi-asserted-by":"publisher","DOI":"10.1109\/SusTech.2018.8671330"},{"key":"ref122","doi-asserted-by":"publisher","DOI":"10.1109\/EIT.2018.8500294"},{"key":"ref123","doi-asserted-by":"publisher","DOI":"10.1109\/PEDG.2019.8807571"},{"key":"ref85","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2041510"},{"key":"ref86","doi-asserted-by":"publisher","DOI":"10.1109\/16.906427"},{"key":"ref87","first-page":"297","article-title":"High-voltage GaN-on-silicon Schottky diodes","author":"boles","year":"2013","journal-title":"Proc CS MANTECH Conf"},{"key":"ref88","doi-asserted-by":"publisher","DOI":"10.1063\/1.112116"}],"container-title":["Proceedings of the IEEE"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/5\/9460558\/09418626.pdf?arnumber=9418626","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,10,26]],"date-time":"2021-10-26T20:36:33Z","timestamp":1635280593000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9418626\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,7]]},"references-count":129,"journal-issue":{"issue":"7"},"URL":"https:\/\/doi.org\/10.1109\/jproc.2021.3072170","relation":{},"ISSN":["0018-9219","1558-2256"],"issn-type":[{"value":"0018-9219","type":"print"},{"value":"1558-2256","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,7]]}}}