{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,16]],"date-time":"2026-07-16T15:49:25Z","timestamp":1784216965932,"version":"3.55.0"},"reference-count":103,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"10","license":[{"start":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T00:00:00Z","timestamp":1727740800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"name":"Indian Nanoelectronics User\u2019s Program (INUP), Government of India, through the Center for Excellence in Nanoelectronics, IIT Bombay"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Proc. IEEE"],"published-print":{"date-parts":[[2024,10]]},"DOI":"10.1109\/jproc.2024.3506996","type":"journal-article","created":{"date-parts":[[2024,12,9]],"date-time":"2024-12-09T18:58:55Z","timestamp":1733770735000},"page":"1610-1631","source":"Crossref","is-referenced-by-count":13,"title":["High-<i>k<\/i> Metal\u2013Insulator\u2013Metal Capacitors for RF and Mixed-Signal VLSI Circuits: Challenges and Opportunities"],"prefix":"10.1109","volume":"112","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7891-0264","authenticated-orcid":false,"given":"D.","family":"Kannadassan","sequence":"first","affiliation":[{"name":"School of Electronics Engineering, Vellore Institute of Technology, Vellore, India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7036-0165","authenticated-orcid":false,"given":"K.","family":"Sivasankaran","sequence":"additional","affiliation":[{"name":"School of Electronics Engineering, Vellore Institute of Technology, Vellore, India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2171-9420","authenticated-orcid":false,"given":"S.","family":"Kumaravel","sequence":"additional","affiliation":[{"name":"School of Electronics Engineering, Vellore Institute of Technology, Vellore, India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7995-4725","authenticated-orcid":false,"given":"Chun-Hu","family":"Cheng","sequence":"additional","affiliation":[{"name":"Department of Mechatronic Engineering, National Taiwan Normal University, Taipei, Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6568-3736","authenticated-orcid":false,"given":"Maryam Shojaei","family":"Baghini","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, IIT Bombay, Mumbai, India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"P. S.","family":"Mallick","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering, Vellore Institute of Technology, Vellore, India"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/N-SSC.2006.4785860"},{"key":"ref2","volume-title":"International Technology Roadmap for Semiconductor 2010, Report on RF and Analog-Mixed Signal Design","year":"2010"},{"key":"ref3","volume-title":"International Roadmap for Devices and Systems (IRDST) 2021 Edition, 2021 Update","year":"2021"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.850642"},{"key":"ref5","volume-title":"Miniaturized electronic circuits","author":"Kilby","year":"1959"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/96.330429"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/33.206932"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.1990.124771"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2003.820664"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2058350"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/55.772376"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/55.992833"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1149\/1.3491490"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ISAPM.2000.869240"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(03)00181-1"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.1569985"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2006.10.049"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2000833"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2011.01.001"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2169038"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1063\/1.2719618"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2004.832785"},{"key":"ref23","article-title":"Fabrication and characterization of anodic high-k MIM capacitors","author":"Kannadassan","year":"2013"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/32\/14\/201"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1038\/267673a0"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1063\/5.0150268"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1051\/epjap:2004206"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2052715"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2009.2039215"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2012520"},{"key":"ref31","first-page":"521","article-title":"Reliability acceleration model of stacked ZrO2-Al2O3-ZrO2 MIM capacitor with cylinder type","volume-title":"Proc. 26th Int. Conf. Microelectronics","author":"Seo"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/TSM.2008.2004339"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/VLSI.Design.2010.63"},{"key":"ref34","volume-title":"Lumped Elements for RF and Microwave Circuits","author":"Bahl","year":"2003"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2000.904282"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2002.1175822"},{"key":"ref37","first-page":"645","article-title":"Effect of polysilicon gate on the flatband voltage shift and mobility degradation for ald-Al2O3 gate dielectric","author":"Lee","year":"2000","journal-title":"IEDM Tech. Dig."},{"key":"ref38","first-page":"35","article-title":"Dielectric reliability and material properties of Al2O3 in metal insulator metal capacitors (MIMcap) for RF bipolar technologies in comparison to SiO2, SiN and Ta2O5","volume-title":"Proc. IEEE Bipolar\/BiCMOS Circuits Technol. Meeting","author":"Allers"},{"issue":"9","key":"ref39","doi-asserted-by":"crossref","first-page":"2803","DOI":"10.1088\/1009-1963\/16\/9\/051","article-title":"High density Al2O3\/TaN-based metal\u2013insulator\u2013metal capacitors in application to radio frequency integrated circuits","volume":"16","author":"Shi-Jin","year":"2007","journal-title":"Chin. Phys."},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2011.03.020"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1166\/jno.2012.1317"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1063\/1.2804104"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1016\/S0040-6090(96)09513-2"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2004.08.148"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2002.808159"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2002.802602"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2003.1221095"},{"key":"ref48","first-page":"222","article-title":"High quality high-k MIM capacitor by Ta2O5\/HfO2\/Ta2O5 multi-layered dielectric and NH3 plasma interface treatments for mixed-signal\/RF applications","volume-title":"Dig. Tech. Papers-Symp. VLSI Technol.","author":"Jeong"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2008.10.090"},{"issue":"1","key":"ref50","doi-asserted-by":"crossref","first-page":"7","DOI":"10.1023\/A:1011273700573","article-title":"Sol-gel processed HfO2 films for photovoltaic applications","volume":"22","author":"Gratzel","year":"2001","journal-title":"J. Sol-Gel Sci. Technol."},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2005.1516582"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1002\/elan.200503306"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1063\/1.123854"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1007\/s10854-008-9644-y"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2030750"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1149\/1.1752935"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1116\/1.2190649"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2004.09.018"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2163611"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1109\/icicdt.2014.6838595"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1109\/EDST.2009.5166109"},{"key":"ref62","first-page":"357","article-title":"MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications","volume-title":"Proc. Mater. Res. Soc. Symp.","volume":"766","author":"Yu"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2034545"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1109\/vlsit.2003.1221094"},{"key":"ref65","first-page":"63","article-title":"High performance high-k MIM capacitor with plug-in plate (PiP) for power delivery line hige-speed MPUs","volume-title":"Proc. Int. Interconnect Technol. Conf.","author":"Inoue"},{"issue":"10","key":"ref66","doi-asserted-by":"crossref","first-page":"431","DOI":"10.1109\/LMWC.2003.818532","article-title":"Very high density RF mim capacitors (17 ff\/\u03bcm2) using high-k Al2O3 doped Ta2O5 dielectrics","volume":"13","author":"Yang","year":"2003","journal-title":"IEEE Microw. Wireless Compon. Lett."},{"issue":"7","key":"ref67","doi-asserted-by":"crossref","first-page":"132","DOI":"10.1149\/1.2198008","article-title":"Metallorganic chemical vapor deposition of Sr-Ta-O and Bi-Ta-O films for backend integration of high-k capacitors","volume":"153","author":"Goux","year":"2006","journal-title":"J. Electrochem. Soc."},{"issue":"8","key":"ref68","doi-asserted-by":"crossref","first-page":"1038","DOI":"10.1063\/1.109827","article-title":"Electrical properties of strontium titanate thin films by multi-ion-beam reactive sputtering technique","volume":"63","author":"Peng","year":"1993","journal-title":"Appl. Phys. Lett."},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1149\/1.2981614"},{"issue":"8","key":"ref70","doi-asserted-by":"crossref","first-page":"821","DOI":"10.1149\/1.3439668","article-title":"Lanthanide-oxides mixed TiO2 dielectrics for high-k MIM capacitors","volume":"157","author":"Cheng","year":"2010","journal-title":"J. Electrochem. Soc."},{"key":"ref71","doi-asserted-by":"crossref","first-page":"313","DOI":"10.1016\/j.mee.2005.04.018","article-title":"MIM capacitors using amorphous high-k PrTixOy dielectrics","volume":"80","author":"Wenger","year":"2005","journal-title":"Microelectronic Eng."},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2173791"},{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2051316"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2004.835791"},{"key":"ref75","first-page":"993","article-title":"Mass production worthy MIM capacitor on gate polysilicon(MIM-COG) structure using HfO2\/HfOxCyNz\/HfO2 dielectric for analog\/RF\/mixed signal application","volume":"20","author":"Park","year":"2007","journal-title":"IEEE Electron Device Lett."},{"key":"ref76","first-page":"940","article-title":"High-capacitance Cu\/Ta2O5\/Cu MIM structure for SoC applications featuring a single-mask add-on process","author":"Ishikawa","year":"2002","journal-title":"IEDM Tech. Dig."},{"key":"ref77","doi-asserted-by":"publisher","DOI":"10.1166\/jnn.2015.11636"},{"key":"ref78","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2013.10.012"},{"key":"ref79","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2015970"},{"issue":"10","key":"ref80","doi-asserted-by":"crossref","DOI":"10.1063\/1.2919573","article-title":"Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors","volume":"103","author":"Wenger","year":"2008","journal-title":"J. Appl. Phys."},{"key":"ref81","doi-asserted-by":"publisher","DOI":"10.1007\/s10825-017-1110-8"},{"key":"ref82","doi-asserted-by":"publisher","DOI":"10.1016\/0079-6107(86)90014-3"},{"key":"ref83","doi-asserted-by":"publisher","DOI":"10.1002\/9783527627561"},{"issue":"16","key":"ref84","doi-asserted-by":"crossref","first-page":"2324","DOI":"10.1016\/j.ijleo.2012.06.090","article-title":"A general review on the derivation of Clausius\u2013Mossotti relation","volume":"124","author":"Talebian","year":"2013","journal-title":"Optik"},{"key":"ref85","first-page":"265","article-title":"Characterization and modeling of Al2O3 MIM capacitors: Temperature and electrical field effects","volume-title":"Proc. 35th Eur. Solid-State Device Res. Conf.","author":"Becu"},{"key":"ref86","doi-asserted-by":"publisher","DOI":"10.1109\/16.285029"},{"key":"ref87","doi-asserted-by":"publisher","DOI":"10.1063\/5.0013737"},{"key":"ref88","doi-asserted-by":"publisher","DOI":"10.1109\/VLSI-TSA54299.2022.9770977"},{"key":"ref89","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838382"},{"key":"ref90","doi-asserted-by":"publisher","DOI":"10.1109\/ICICDT.2016.7542062"},{"key":"ref91","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2019.8720407"},{"key":"ref92","doi-asserted-by":"publisher","DOI":"10.1149\/08004.0233ecst"},{"key":"ref93","doi-asserted-by":"publisher","DOI":"10.1109\/TADVP.2009.2038234"},{"key":"ref94","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2011.2106129"},{"key":"ref95","doi-asserted-by":"publisher","DOI":"10.1109\/TSM.2019.2953864"},{"key":"ref96","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2030539"},{"key":"ref97","doi-asserted-by":"publisher","DOI":"10.1149\/2.085112jes"},{"key":"ref98","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2412685"},{"key":"ref99","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2281935"},{"key":"ref100","doi-asserted-by":"publisher","DOI":"10.1063\/1.4895050"},{"key":"ref101","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48227.2022.9764503"},{"key":"ref102","doi-asserted-by":"publisher","DOI":"10.1116\/1.3532823"},{"key":"ref103","doi-asserted-by":"crossref","first-page":"218","DOI":"10.1016\/j.sse.2012.09.007","article-title":"Characterization of Al2O3\u2013HfO2\u2013Al2O3 sandwiched MIM capacitor under DC and AC stresses","volume":"79","author":"Kwak","year":"2013","journal-title":"Solid-State Electron."}],"container-title":["Proceedings of the IEEE"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/5\/10812053\/10786276.pdf?arnumber=10786276","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,12,24]],"date-time":"2024-12-24T06:24:06Z","timestamp":1735021446000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10786276\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10]]},"references-count":103,"journal-issue":{"issue":"10"},"URL":"https:\/\/doi.org\/10.1109\/jproc.2024.3506996","relation":{},"ISSN":["0018-9219","1558-2256"],"issn-type":[{"value":"0018-9219","type":"print"},{"value":"1558-2256","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,10]]}}}