{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,9,13]],"date-time":"2023-09-13T19:45:35Z","timestamp":1694634335162},"reference-count":22,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"2","license":[{"start":{"date-parts":[[1985,1,1]],"date-time":"1985-01-01T00:00:00Z","timestamp":473385600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Select. Areas Commun."],"published-print":{"date-parts":[[1985]]},"DOI":"10.1109\/jsac.1985.1146210","type":"journal-article","created":{"date-parts":[[2008,6,12]],"date-time":"2008-06-12T20:02:07Z","timestamp":1213300927000},"page":"384-393","source":"Crossref","is-referenced-by-count":1,"title":["The Future Impact of GaAs Digital IC's"],"prefix":"10.1109","volume":"3","author":[{"given":"P.","family":"Greiling","sequence":"first","affiliation":[]}],"member":"263","reference":[{"key":"ref10","first-page":"44","article-title":"Future applications for digital GaAs ICs","volume":"ii","author":"greiling","year":"1981","journal-title":"Lambda"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1979.19432"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.1980.1130101"},{"key":"ref13","author":"leichti","year":"1982","journal-title":"GaAs Schottky-gate field-effect transistor medium scale integration"},{"key":"ref14","article-title":"High speed LSI GaAs integrated circuits","author":"lee","year":"1980","journal-title":"Proc GaAs IC Symp"},{"key":"ref15","article-title":"A 3 NS GaAs 4K \ufffd 16 static RAM","author":"yokoyama","year":"1984","journal-title":"ISSCC 1984"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.1983.1156500"},{"key":"ref17","article-title":"A high yield GaAs gate array technology and applications","author":"rode","year":"1983","journal-title":"Proc 1983 IEEE GaAs IC Symp"},{"key":"ref18","article-title":"Submicrometer GaAs digital ICs","author":"greiling","year":"1983","journal-title":"1983 GaAs IC Symp"},{"key":"ref19","article-title":"An integrated GaAs FET\/circuit modeling package","author":"snyder","year":"1981","journal-title":"GaAs IC Symp"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1978.19147"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"1586","DOI":"10.1109\/T-ED.1983.21374","article-title":"iva-2 self-aligned submicron ion-implanted gaas mesfets for high-speed logic","volume":"30","author":"sadler","year":"1983","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref6","doi-asserted-by":"crossref","first-page":"1340","DOI":"10.1109\/T-ED.1978.19287","article-title":"mp-a1 electron-beam fabricated gaas fet inverter","volume":"25","author":"greiling","year":"1978","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref5","author":"van tuyl","year":"1974","journal-title":"Gallium Arsenide Digital Integrated Circuits"},{"key":"ref8","doi-asserted-by":"crossref","first-page":"1827","DOI":"10.1109\/T-ED.1979.19697","article-title":"mp-a2 fast enhancement-mode gaas mesfet logic","volume":"26","author":"lundgren","year":"1979","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref7","article-title":"Lower power GaAs digital ICs using Schottky diode-FET logic","author":"eden","year":"1977","journal-title":"1978 IEEE Int Solid State Circuits Conf Dig of Tech Papers"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"42","DOI":"10.1109\/IEDM.1980.189747","article-title":"scaling the micron barrier with x-rays","author":"lepselter","year":"1980","journal-title":"1980 International Electron Devices Meeting"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/PROC.1982.12224"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.1978.4329550"},{"key":"ref20","article-title":"Investigation of material and process uniformity of ion implanted GaAs ICs","author":"lee","year":"1982","journal-title":"Proc 1982 GaAs IC Symp"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/PROC.1982.12225"},{"key":"ref21","doi-asserted-by":"crossref","first-page":"402","DOI":"10.1109\/T-ED.1982.20715","article-title":"the effect of logic cell configuration, gatelength, and fan-out on the propagation delays of gaas mesfet logic gates","volume":"29","author":"namordi","year":"1982","journal-title":"IEEE Transactions on Electron Devices"}],"container-title":["IEEE Journal on Selected Areas in Communications"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx6\/49\/25813\/01146210.pdf?arnumber=1146210","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,29]],"date-time":"2021-11-29T20:25:52Z","timestamp":1638217552000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/1146210\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1985]]},"references-count":22,"journal-issue":{"issue":"2"},"URL":"https:\/\/doi.org\/10.1109\/jsac.1985.1146210","relation":{},"ISSN":["0733-8716"],"issn-type":[{"value":"0733-8716","type":"print"}],"subject":[],"published":{"date-parts":[[1985]]}}}