{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T00:21:07Z","timestamp":1787012467326,"version":"build-2736575974"},"reference-count":22,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"3","license":[{"start":{"date-parts":[[2011,3,1]],"date-time":"2011-03-01T00:00:00Z","timestamp":1298937600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2011,3]]},"DOI":"10.1109\/jssc.2010.2102570","type":"journal-article","created":{"date-parts":[[2011,1,31]],"date-time":"2011-01-31T16:09:18Z","timestamp":1296490158000},"page":"690-694","source":"Crossref","is-referenced-by-count":20,"title":["A Sensing Noise Compensation Bit Line Sense Amplifier for Low Voltage Applications"],"prefix":"10.1109","volume":"46","author":[{"given":"Myoung Jin","family":"Lee","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","first-page":"142","article-title":"low-vt small-offset gated preamplifier for sub-1v gigabit dram arrays","author":"akiyama","year":"2009","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/4.991387"},{"key":"ref12","first-page":"351","article-title":"a new dram cell technology using merged process with storage node and memory cell contact for 4 gb dram and beyond","author":"chun","year":"1998","journal-title":"IEDM Dig Tech Papers"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2004.1345377"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/66.999584"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2036309"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2035027"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/16.735728"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2038243"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.908882"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ICECS.2007.4511097"},{"key":"ref3","first-page":"24","article-title":"semiconductor memories for it era","author":"hwang","year":"2002","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1049\/el:19981161"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/4.568824"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2001.912681"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2010.5433892"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"47","DOI":"10.1109\/ESSDERC.2007.4430880","article-title":"the future outlook of memory devices","author":"kim","year":"2007","journal-title":"Solid State Device Res Conf 2007"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/4.568820"},{"key":"ref9","first-page":"154","article-title":"an offset cancellation bit-line sensing scheme for low-voltage dram applications","author":"hong","year":"2002","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref20","first-page":"33.4.1","article-title":"6F2 buried wordline DRAM cell for 40 nm and beyond","author":"schloesser","year":"2008","journal-title":"Proc IEDM Tech Dig 2008"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1985.1052468"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.1993.920552"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/4\/5718244\/05705519.pdf?arnumber=5705519","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,10,10]],"date-time":"2021-10-10T19:46:45Z","timestamp":1633895205000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5705519\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,3]]},"references-count":22,"journal-issue":{"issue":"3"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2010.2102570","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2011,3]]}}}