{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,25]],"date-time":"2025-10-25T19:00:05Z","timestamp":1761418805030,"version":"3.41.0"},"reference-count":22,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"10","license":[{"start":{"date-parts":[[2012,10,1]],"date-time":"2012-10-01T00:00:00Z","timestamp":1349049600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2012,10,1]],"date-time":"2012-10-01T00:00:00Z","timestamp":1349049600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2012,10,1]],"date-time":"2012-10-01T00:00:00Z","timestamp":1349049600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2012,10]]},"DOI":"10.1109\/jssc.2012.2204927","type":"journal-article","created":{"date-parts":[[2012,7,26]],"date-time":"2012-07-26T23:01:20Z","timestamp":1343343680000},"page":"2298-2308","source":"Crossref","is-referenced-by-count":19,"title":["Design of a 4-W Envelope Tracking Power Amplifier With More Than One Octave Carrier Bandwidth"],"prefix":"10.1109","volume":"47","author":[{"given":"Jonmei J.","family":"Yan","sequence":"first","affiliation":[{"name":"University of California, San Diego, Gilman, La Jolla"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chin","family":"Hsia","sequence":"additional","affiliation":[{"name":"Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Chutung, R.O.C. Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Donald F.","family":"Kimball","sequence":"additional","affiliation":[{"name":"University of California, San Diego, Gilman, La Jolla"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peter M.","family":"Asbeck","sequence":"additional","affiliation":[{"name":"University of California, San Diego, Gilman, La Jolla"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","first-page":"1","article-title":"Development of GaN HEMT based high power high efficiency distributed power amplifier for military applications","author":"chenggang","year":"2007","journal-title":"Proc IEEE Military Commun Conf"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/EMICC.2007.4412669"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/MILCOM.2007.4455135"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/7260.950763"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2009.2036323"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2009.2027075"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2011.5940621"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2005.845716"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2010.2049770"},{"key":"ref19","first-page":"2352","article-title":"Analysis and design of wideband power amplifier using GaN","author":"sim","year":"2009","journal-title":"Proc AsiaPacific Microw Conf"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2011.5973440"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/22.971638"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/PAWR.2011.5725388"},{"key":"ref5","first-page":"1","article-title":"A 19 W high-efficiency wideband CMOS-GaN class-E Chireix RF outphasing power amplifier","author":"van der heijden","year":"2011","journal-title":"IEEE MTT-S Int Microw Symp Dig"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/PAWR.2011.5725371"},{"key":"ref7","first-page":"1572","article-title":"High-efficiency, high-linearity envelope tracking power amplifier for mobile UHF applications","author":"yan","year":"2010","journal-title":"Proc Military Commun Conf"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"2218","DOI":"10.1109\/JSSC.2008.2004456","article-title":"250 W HVHBT Doherty with 57% WCDMA efficiency linearized to <formula formulatype=\"inline\"><tex Notation=\"TeX\">${-}55$<\/tex><\/formula> dBc for 2c11 6.5 dB PAR","volume":"43","author":"steinbeiser","year":"2008","journal-title":"IEEE J Solid-State Circuits"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2011.5973479"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2011.6062485"},{"key":"ref20","first-page":"1","article-title":"Development of GaN HEMT based high power high efficiency distributed power amplifier for military applications","author":"chenggang","year":"2007","journal-title":"Proc IEEE Military Commun Conf"},{"key":"ref22","first-page":"1006","article-title":"A wideband GaN doherty amplifier with 35% fractional bandwidth","author":"bathich","year":"2010","journal-title":"Proc Eur Microw Conf"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2011.5973223"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/4\/6320632\/06249766.pdf?arnumber=6249766","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,27]],"date-time":"2025-05-27T17:19:19Z","timestamp":1748366359000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/6249766\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,10]]},"references-count":22,"journal-issue":{"issue":"10"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2012.2204927","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"type":"print","value":"0018-9200"},{"type":"electronic","value":"1558-173X"}],"subject":[],"published":{"date-parts":[[2012,10]]}}}