{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T12:19:15Z","timestamp":1781871555396,"version":"3.54.5"},"reference-count":14,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"1","license":[{"start":{"date-parts":[[2015,1,1]],"date-time":"2015-01-01T00:00:00Z","timestamp":1420070400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2015,1,1]],"date-time":"2015-01-01T00:00:00Z","timestamp":1420070400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2015,1,1]],"date-time":"2015-01-01T00:00:00Z","timestamp":1420070400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2015,1]]},"DOI":"10.1109\/jssc.2014.2352293","type":"journal-article","created":{"date-parts":[[2014,9,16]],"date-time":"2014-09-16T21:15:47Z","timestamp":1410902147000},"page":"204-213","source":"Crossref","is-referenced-by-count":184,"title":["Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB\/s High-Speed Programming"],"prefix":"10.1109","volume":"50","author":[{"given":"Ki-Tae","family":"Park","sequence":"first","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sangwan","family":"Nam","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Daehan","family":"Kim","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Pansuk","family":"Kwak","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Doosub","family":"Lee","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yoon-He","family":"Choi","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Myung-Hoon","family":"Choi","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dong-Hun","family":"Kwak","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Doo-Hyun","family":"Kim","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Min-Su","family":"Kim","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyun-Wook","family":"Park","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sang-Won","family":"Shim","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kyung-Min","family":"Kang","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sang-Won","family":"Park","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kangbin","family":"Lee","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyun-Jun","family":"Yoon","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kuihan","family":"Ko","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dong-Kyo","family":"Shim","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yang-Lo","family":"Ahn","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jinho","family":"Ryu","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Donghyun","family":"Kim","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kyunghwa","family":"Yun","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Joonsoo","family":"Kwon","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seunghoon","family":"Shin","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dae-Seok","family":"Byeon","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kihwan","family":"Choi","sequence":"additional","affiliation":[{"name":"Flash PE Team, Memory Business, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jin-Man","family":"Han","sequence":"additional","affiliation":[{"name":"Solution PE Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kye-Hyun","family":"Kyung","sequence":"additional","affiliation":[{"name":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jeong-Hyuk","family":"Choi","sequence":"additional","affiliation":[{"name":"Flash Product &amp; Technology, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kinam","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Giheung-gu, Yongin-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","first-page":"442","article-title":"A 159 mm2 32 nm 32 Gb MLC NAND-flash memory with 200 MB\/s asynchronous DDR interface","author":"kim","year":"2010","journal-title":"ISSCC Dig Tech Papers"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2012.6177077"},{"key":"ref12","first-page":"60t","article-title":"Bit cost scalable (BiCS) technology for future ultra high density storage memories","author":"nitayama","year":"2013","journal-title":"Dig Symp VLSI Tech"},{"key":"ref13","first-page":"118","article-title":"Study of fast initial charge loss and it's impact on the programmed states Vth distribution of charge-trapping NAND flash","author":"chen","year":"2010","journal-title":"IEDM Tech Dig"},{"key":"ref14","first-page":"26","article-title":"Lifetime management of flash-based SSDs using recovery-aware dynamic throttling","author":"lee","year":"2012","journal-title":"Proc USENIX Conf File and Storage Technologies"},{"key":"ref4","first-page":"102","article-title":"25 nm 64 Gb MLC technology and scaling challenge","author":"prall","year":"2010","journal-title":"IEEE IEDM Tech Dig"},{"key":"ref3","first-page":"192","article-title":"Vertical cell array using TCAT (terabit cell array transistor) technology for ultra high density NAND flash memory","author":"jang","year":"2009","journal-title":"Dig Symp VLSI Tech"},{"key":"ref6","article-title":"Ushering in the 3D memory era with V-NAND","author":"elliott","year":"2013","journal-title":"Flash Memory Summit Special Keynote B"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2014.6757454"},{"key":"ref8","first-page":"613","article-title":"A novel SONOS structure of SiO<formula formulatype=\"inline\"><tex Notation=\"TeX\">$_{2}$<\/tex><\/formula>\/SiN\/Al<formula formulatype=\"inline\"><tex Notation=\"TeX\">$_{2}$<\/tex><\/formula>O<formula formulatype=\"inline\"> <tex Notation=\"TeX\">$_{3}$<\/tex><\/formula> with TaN metal gate for multi-giga bit flash memories","author":"lee","year":"2003","journal-title":"IEDM Tech Dig"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2007.4339708"},{"key":"ref2","first-page":"22","article-title":"Multi-stacked 1 G cell\/layer pipe-shaped BiCS flash memory","author":"maeda","year":"2009","journal-title":"Dig Symp VLSI Circuits"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2008.4523281"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2011.5746287"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/6998099\/06899702.pdf?arnumber=6899702","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,15]],"date-time":"2025-10-15T17:39:59Z","timestamp":1760549999000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/6899702\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,1]]},"references-count":14,"journal-issue":{"issue":"1"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2014.2352293","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,1]]}}}