{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,25]],"date-time":"2026-04-25T14:33:24Z","timestamp":1777127604891,"version":"3.51.4"},"reference-count":26,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"9","license":[{"start":{"date-parts":[[2016,9,1]],"date-time":"2016-09-01T00:00:00Z","timestamp":1472688000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"name":"Robert Bosch GmbH"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2016,9]]},"DOI":"10.1109\/jssc.2016.2560198","type":"journal-article","created":{"date-parts":[[2016,6,22]],"date-time":"2016-06-22T19:20:50Z","timestamp":1466623250000},"page":"2054-2065","source":"Crossref","is-referenced-by-count":56,"title":["A 234\u2013261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4\u20137.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output"],"prefix":"10.1109","volume":"51","author":[{"given":"Stefan","family":"Shopov","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Andreea","family":"Balteanu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Juergen","family":"Hasch","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pascal","family":"Chevalier","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Andreia","family":"Cathelin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sorin P.","family":"Voinigescu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","year":"2015"},{"key":"ref11","first-page":"1","article-title":"A highly integrated 60 GHz 6-channel transceiver chip in $0.35~\\mu $ m SiGe technology for smart sensing and short-range communications","author":"nasr","year":"2015","journal-title":"Proc IEEE Comp Semicond Integr Circuits Symp (CSICS)"},{"key":"ref12","first-page":"164","article-title":"A 60 GHz CMOS phased-array transceiver pair for multi-Gb\/s wireless communications","author":"emami","year":"2011","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2118110"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2007.380513"},{"key":"ref15","first-page":"233","article-title":"A 77-GHz 4-channel automotive radar transceiver in SiGe","author":"forstner","year":"2008","journal-title":"IEEE Radio Frequency Integrated Circuits (RFIC) Symp Dig"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2051474"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2011.2176504"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2011.2114364"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2015.2471847"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/BCTM.2015.7340549"},{"key":"ref3","first-page":"3","article-title":"A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz $f_{T}\/370~{\\text {GHz}}~f_{MAX}$ HBT and high-Q millimeter-wave passives","author":"chevalier","year":"2014","journal-title":"IEEE Int Electron Devices Meeting (IEDM) Dig"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2265494"},{"key":"ref5","first-page":"190","article-title":"A 233-GHz low noise amplifier with 22.5 dB gain in $0.13~\\mu {\\text {m}}$ SiGe","author":"malz","year":"2014","journal-title":"Proc 1st IEEE Eur Microwave Integrated Circuits Conf (EuMIC)"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2012.2190092"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2013.6659189"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"92","DOI":"10.1109\/BCTM.2014.6981293","article-title":"A 90 nm SiGe BiCMOS technology for mm-wave and high-performance analog applications","author":"pekarik","year":"2014","journal-title":"IEEE Bipolar\/BiCMOS Circuits Technol Meeting (BCTM)"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2013.6569590"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/SiRF.2012.6160164"},{"key":"ref20","first-page":"181","article-title":"235–275 GHz ( $\\times\\! $ 16) frequency multiplier chains with up to 0 dBm peak output power and low DC power consumption","author":"sarmah","year":"2014","journal-title":"IEEE Radio Frequency Integrated Circuit Symp Dig"},{"key":"ref22","author":"maas","year":"2003","journal-title":"Nonlinear Microwave and RF Circuits"},{"key":"ref21","first-page":"1213","article-title":"A DC to X-band frequency doubler using GaAs HBT MMIC","volume":"3","author":"zhang","year":"1997","journal-title":"IEEE MTT-S Int Microwave Symp Dig"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2011.2165964"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2014.2360679"},{"key":"ref26","first-page":"271","article-title":"Frequency doublers with 10.2\/5.2 dBm peak power at 100\/202 GHz in 45 nm SOI CMOS","author":"liu","year":"2015","journal-title":"IEEE Radio Frequency Integrated Circuits (RFIC) Symp Dig"},{"key":"ref25","year":"0","journal-title":"Integrand EMX"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/7562573\/07496907.pdf?arnumber=7496907","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:03:23Z","timestamp":1642003403000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7496907\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,9]]},"references-count":26,"journal-issue":{"issue":"9"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2016.2560198","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,9]]}}}