{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,26]],"date-time":"2026-02-26T15:50:50Z","timestamp":1772121050334,"version":"3.50.1"},"reference-count":31,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"9","license":[{"start":{"date-parts":[[2016,9,1]],"date-time":"2016-09-01T00:00:00Z","timestamp":1472688000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2016,9,1]],"date-time":"2016-09-01T00:00:00Z","timestamp":1472688000000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2016,9,1]],"date-time":"2016-09-01T00:00:00Z","timestamp":1472688000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2016,9,1]],"date-time":"2016-09-01T00:00:00Z","timestamp":1472688000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["1543788"],"award-info":[{"award-number":["1543788"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2016,9]]},"DOI":"10.1109\/jssc.2016.2584639","type":"journal-article","created":{"date-parts":[[2016,8,1]],"date-time":"2016-08-01T18:09:10Z","timestamp":1470074950000},"page":"1994-2005","source":"Crossref","is-referenced-by-count":54,"title":["Supply-Scaling for Efficiency Enhancement in Distributed Power Amplifiers"],"prefix":"10.1109","volume":"51","author":[{"given":"Kelvin","family":"Fang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Cooper S.","family":"Levy","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"James F.","family":"Buckwalter","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TTHZ.2014.2315451"},{"key":"ref30","first-page":"69","article-title":"A W-band power amplifier in 65-nm CMOS with 27 GHz bandwidth and 14.8 dBm saturated output power","author":"tsai","year":"2012","journal-title":"Proc IEEE Radio Freq Integr Circuits Symp"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2011.2125985"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/BCTM.2015.7340559"},{"key":"ref12","author":"wong","year":"1993","journal-title":"Fundamentals of Distributed Amplification"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.1986.1133549"},{"key":"ref14","first-page":"374","article-title":"A 0.13 $\\mu$ m CMOS power amplifier with ultra-wide instantaneous bandwidth for imaging applications","author":"roderick","year":"2009","journal-title":"IEEE Int Solid-State Circuits Conf Tech Dig"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2009.2029029"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/22.60017"},{"key":"ref17","first-page":"952","article-title":"A Ka-band high-pass distributed amplifier in 120 nm SiGe BiCMOS","author":"gathman","year":"2010","journal-title":"IEEE Int Microw Symp Dig"},{"key":"ref18","first-page":"2003","year":"0","journal-title":"EMX"},{"key":"ref19","first-page":"92","article-title":"A 90 nm SiGe BiCMOS technology for mm-wave and high-performance analog applications","author":"pekarik","year":"2014","journal-title":"Proc IEEE Bipolar\/BiCMOS Circuits Technol Meeting"},{"key":"ref28","first-page":"420","article-title":"A 90 GHz-carrier 30 GHz-bandwidth hybrid switching transmitter with integrated antenna","author":"arbabian","year":"2010","journal-title":"IEEE Int Solid-State Circuits Conf Tech Dig"},{"key":"ref4","first-page":"1","article-title":"A low noise, DC-135 GHz MOS-HBT distributed amplifier for receiver applications","author":"hoffman","year":"2015","journal-title":"IEEE Compound Semiconductor Integrated Circuit Symp"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2006.1696114"},{"key":"ref3","first-page":"1","article-title":"A high performance DC-80 GHz distributed amplifier in 40-nm CMOS digital process","author":"chen","year":"2014","journal-title":"Proc IEEE MTT-S Int Microw Symp"},{"key":"ref6","first-page":"478","article-title":"A 12 dBm 320 GHz GBW distributed amplifier in a $0.12~\\mu \\text {m}$ SOI CMOS","volume":"1","author":"kim","year":"2004","journal-title":"IEEE Int Solid-State Circuits Conf Tech Dig"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.877258"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2011.2139197"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2015.2444878"},{"key":"ref7","first-page":"154","article-title":"An 80 GHz travelling-wave amplifier in a 90 nm CMOS technology","volume":"1","author":"liu","year":"2005","journal-title":"IEEE Int Solid-State Circuits Conf Tech Dig"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JRPROC.1948.231624"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2026824"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ICECS.2012.6463520"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2014.2360679"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2009.2014433"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2004.831612"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2008.916930"},{"key":"ref23","doi-asserted-by":"crossref","first-page":"2715","DOI":"10.1109\/JSSC.2007.908688","article-title":"40-Gb\/s high-gain distributed amplifiers with cascaded gain stages in 0.18- $\\mu \\text {m}$ CMOS","volume":"42","author":"chien","year":"2007","journal-title":"IEEE J Solid-State Circuits"},{"key":"ref26","first-page":"270","article-title":"A DC to 22 GHz, 2W high power distributed amplifier using stacked FET topology with gate periphery tapering","author":"fujii","year":"2016","journal-title":"Proc IEEE Radio Freq Integr Circuits Symp"},{"key":"ref25","first-page":"1","article-title":"A novel 100 MHz-45 GHz GaN HEMT low noise non-gate-terminated distributed amplifier based on a 6-inch 0.15 $\\mu \\text {m}$ GaN-SiC mm-wave process technology","author":"kobayashi","year":"2015","journal-title":"IEEE Compound Semiconductor Integrated Circuit Symp"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/ieeexplore.ieee.org\/ielaam\/4\/7562573\/7527650-aam.pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/7562573\/07527650.pdf?arnumber=7527650","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,4,8]],"date-time":"2022-04-08T18:55:51Z","timestamp":1649444151000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7527650\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,9]]},"references-count":31,"journal-issue":{"issue":"9"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2016.2584639","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,9]]}}}