{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,2]],"date-time":"2026-07-02T05:05:36Z","timestamp":1782968736252,"version":"3.54.5"},"reference-count":71,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"12","license":[{"start":{"date-parts":[[2016,12,1]],"date-time":"2016-12-01T00:00:00Z","timestamp":1480550400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2016,12]]},"DOI":"10.1109\/jssc.2016.2603992","type":"journal-article","created":{"date-parts":[[2016,10,4]],"date-time":"2016-10-04T18:59:15Z","timestamp":1475607555000},"page":"3063-3077","source":"Crossref","is-referenced-by-count":30,"title":["A 0.55 THz Near-Field Sensor With a $\\mu \\text{m}$ -Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS"],"prefix":"10.1109","volume":"51","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4606-4918","authenticated-orcid":false,"given":"Janusz","family":"Grzyb","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bernd","family":"Heinemann","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ullrich R.","family":"Pfeiffer","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2217851"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1109\/22.925500"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.93.267401"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/2944.974231"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2013.6569590"},{"key":"ref32","first-page":"519","article-title":"A 120-GHz FMCW radar frontend demonstrator based on a SiGe chipset","author":"jahn","year":"2011","journal-title":"2011 41st European Microwave Conference EuMC"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2012.6341311"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2013.2287493"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1038\/lsa.2013.64"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1007\/s10762-011-9809-2"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1017\/S1759078715000379"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/EuMC.2015.7345822"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2014.6848598"},{"key":"ref62","first-page":"1","article-title":"Active integrated probes for tumor detection and ablation","author":"kwon","year":"2014","journal-title":"IEEE MTT-S Int Microw Symp (IMS)"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2014.6848509"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2605001"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2217831"},{"key":"ref64","first-page":"30.5.1","article-title":"SiGe HBT technology with fT\/fmax of 300 GHz\/500 GHz and 2.0 ps CML gate delay","author":"heinemann","year":"2010","journal-title":"Proc Int Electron Devices Meeting (IEDM)"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2217853"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1109\/22.798002"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1063\/1.2976636"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2272864"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1364\/OE.20.019395"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1109\/4.953475"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1109\/EuCAP.2014.6901860"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TTHZ.2011.2159556"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/22.989974"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/EuMIC.2014.6997783"},{"key":"ref22","first-page":"353","article-title":"A 240 GHz wideband QPSK transmitter in 65 nm CMOS","author":"kang","year":"2014","journal-title":"Proc IEEE Radio Freq Integr Circuits Symp"},{"key":"ref21","first-page":"305","article-title":"A 240 GHz direct conversion IQ receiver in \n$0.13~\\mu $\nm SiGe BiCMOS technology","author":"elkhouly","year":"2013","journal-title":"Proc IEEE Radio Freq Integr Circuits Symp (RFIC)"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2013.2288230"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2358570"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2104553"},{"key":"ref25","first-page":"260","article-title":"A 300 GHz frequency synthesizer with 7.9% locking range in 90 nm SiGe BiCMOS","author":"chiang","year":"2014","journal-title":"Proc IEEE Int Solid-State Circuits Conf (ISSCC)"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2014.6848538"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1063\/1.2835705"},{"key":"ref59","first-page":"1","article-title":"A 0.62–10 GHz CMOS dielectric spectroscopy system for chemical\/biological material characterization","author":"bajestan","year":"2014","journal-title":"IEEE MTT-S Int Microw Symp (IMS)"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1364\/OE.20.003345"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1364\/OE.16.001786"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1063\/1.1428619"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1364\/OL.36.000265"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1002\/mop.1096"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1063\/1.4722801"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1023\/A:1024444809852"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2012.6259567"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1007\/s10762-015-0172-6"},{"key":"ref40","first-page":"424","article-title":"A fully integrated 0.55 THz near-field sensor with a lateral resolution down to \n$8~\\mu $\nm in \n$0.13~\\mu $\nm SiGe BiCMOS","author":"grzyb","year":"2016","journal-title":"Proc IEEE Int Solid-State Circuits Conf"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2265493"},{"key":"ref13","first-page":"1","article-title":"Toward low-NEP room-temperature THz MOSFET direct detectors in CMOS technology","author":"grzyb","year":"2013","journal-title":"Proc 37th Int Conf Infr Terahertz Millim Waves (IRMMW-THZ)"},{"key":"ref14","first-page":"254","article-title":"280 GHz and 860 GHz image sensors using Schottky-barrier diodes in \n$0.13~\\mu $\nm digital CMOS","author":"han","year":"2012","journal-title":"Proc IEEE Int Solid-State Circuits Conf"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2011.5746211"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2262739"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2014.2385777"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2015.2504930"},{"key":"ref19","first-page":"357","article-title":"A 240 GHz wideband QPSK receiver in 65 nm CMOS","author":"thyagarajan","year":"2014","journal-title":"Proc Radio Freq Integr Circuits Symp"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TAP.2013.2289354"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TTHZ.2011.2159647"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1063\/1.1856701"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ICIMW.2010.5612674"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TTHZ.2011.2159562"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TTHZ.2011.2159551"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1038\/nphoton.2013.151"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2013.2256924"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1002\/mop.25754"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1063\/1.4861621"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1021\/nl802086x"},{"key":"ref47","first-page":"64140l-1","article-title":"Review of THz near-field methods","volume":"6414","author":"lin","year":"2007","journal-title":"Proc SPIE"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1063\/1.1328772"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1149\/05009.0061ecst"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1063\/1.1392303"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1063\/1.1616668"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/7756673\/07582448.pdf?arnumber=7582448","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:12:27Z","timestamp":1642003947000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7582448\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,12]]},"references-count":71,"journal-issue":{"issue":"12"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2016.2603992","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,12]]}}}