{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,23]],"date-time":"2026-01-23T12:04:32Z","timestamp":1769169872033,"version":"3.49.0"},"reference-count":31,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"4","license":[{"start":{"date-parts":[[2017,4,1]],"date-time":"2017-04-01T00:00:00Z","timestamp":1491004800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"name":"Infineon Technologies"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2017,4]]},"DOI":"10.1109\/jssc.2016.2639535","type":"journal-article","created":{"date-parts":[[2017,1,9]],"date-time":"2017-01-09T19:12:43Z","timestamp":1483989163000},"page":"1034-1043","source":"Crossref","is-referenced-by-count":26,"title":["A \u00b136-A Integrated Current-Sensing System With a 0.3% Gain Error and a 400- $\\mu \\text{A}$ Offset From \u221255 \u00b0C to +85 \u00b0C"],"prefix":"10.1109","volume":"52","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3846-134X","authenticated-orcid":false,"given":"Saleh","family":"Heidary Shalmany","sequence":"first","affiliation":[]},{"given":"Dieter","family":"Draxelmayr","sequence":"additional","affiliation":[]},{"given":"Kofi A. A.","family":"Makinwa","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref31","first-page":"102","article-title":"A digitally assisted single-point-calibration CMOS bandgap voltage reference with a $3\\sigma$ inaccuracy of ±0.08% for fuel-gauge applications","author":"maderbacher","year":"2016","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref30","first-page":"192","article-title":"A BJT-based temperature-to-digital converter with ±60mK ( $3\\sigma $ ) inaccuracy from ?70 °C to +125 °C in 160nm CMOS","author":"yousefzadeh","year":"2015","journal-title":"Proc Symp VSLI Circuits"},{"key":"ref10","year":"1999","journal-title":"±20A Integrated Current Sensor datasheet"},{"key":"ref11","year":"2013","journal-title":"LM3812\/LM3813 Precision Current Gauge IC With Ultra Low Loss Sense Element and PWM Output Datasheet"},{"key":"ref12","year":"2000","journal-title":"LM3822 Precision Current Gauge IC With Internal Zero Ohm Sense Element and PWM Output Datasheet"},{"key":"ref13","year":"2009","journal-title":"DS2760 High-Precision Li+ Battery Monitor Datasheet"},{"key":"ref14","year":"2009","journal-title":"DS2741 Current Monitor and Accumulator With Integrated Sense Resistor Datasheet"},{"key":"ref15","doi-asserted-by":"crossref","first-page":"800","DOI":"10.1109\/JSSC.2015.2511168","article-title":"A ±5A integrated current-sensing system with ±0.3% gain error and $16~\\mu $ A offset from ?55 °C to +85 °C","volume":"51","author":"shalmany","year":"2016","journal-title":"IEEE J Solid-State Circuits"},{"key":"ref16","first-page":"142","article-title":"Mass transport of aluminum by momentum exchange with conducting electrons","author":"black","year":"1968","journal-title":"Proc Annu Rel Phys Symp"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1002\/9780470455265"},{"key":"ref18","article-title":"Semiconductor package with internal shunt resistor","author":"arshad","year":"2007"},{"key":"ref19","article-title":"Current sense element incorporated into integrated circuit package lead frame","author":"andreycak","year":"2000"},{"key":"ref28","first-page":"386","article-title":"A micropower battery current sensor with ±0.03% ( $3\\sigma $ ) inaccuracy from ?40 °C to +85 °C","author":"shalmany","year":"2013","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2015.7313877"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/JSEN.2001.954835"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSEN.2004.840836"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2319252"},{"key":"ref29","first-page":"298","article-title":"A fully integrated ±5A current-sensing system with ±0.25% gain error and 12 $\\mu $ A offset from ?40 °C to +85 °C","author":"shalmany","year":"2015","journal-title":"Proc Symp VSLI Circuits"},{"key":"ref5","first-page":"384","article-title":"A 100Hz 5nT\/ ${\\sqrt {H}} z$ low-pass $\\Delta \\Sigma$ servo-controlled microfluxgate magnetometer using pulsed excitation","author":"gayral","year":"2007","journal-title":"IEEE Int Solid State Circuits Conf Dig Tech Papers"},{"key":"ref8","first-page":"1251","article-title":"An overview of integratable current sensor technologies","author":"xiao","year":"2003","journal-title":"Proc Ind Appl Conf"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ICSENS.2012.6411161"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2015.7063140"},{"key":"ref9","year":"2015","journal-title":"INA250 36-V Low- or High-Side Bidirectional Zero-Drift Current-Shunt Monitor With Precision Integrated Shunt Resistor"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSEN.2009.2013914"},{"key":"ref20","article-title":"Integrated shunt resistor with external contact in a semiconductor package","author":"udompanyavit","year":"2012"},{"key":"ref22","first-page":"1","article-title":"A ±36A integrated current-sensing system with 0.3% gain error and $400~\\mu $ A offset from ?55 °C to +85 °C","author":"shalmany","year":"2016","journal-title":"Proc Symp VSLI Circuits"},{"key":"ref21","article-title":"Low temperature coefficient leadframe","author":"mark stitt","year":"2001"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1049\/el.2010.3337"},{"key":"ref23","doi-asserted-by":"crossref","DOI":"10.1007\/1-4020-5258-8","author":"pertijs","year":"2006","journal-title":"Precision Temperature Sensors in CMOS Technology"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2214831"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.858476"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/7888613\/07811238.pdf?arnumber=7811238","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,21]],"date-time":"2023-08-21T17:03:47Z","timestamp":1692637427000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7811238\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,4]]},"references-count":31,"journal-issue":{"issue":"4"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2016.2639535","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017,4]]}}}