{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,24]],"date-time":"2026-07-24T04:17:45Z","timestamp":1784866665759,"version":"3.55.0"},"reference-count":56,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"11","license":[{"start":{"date-parts":[[2018,11,1]],"date-time":"2018-11-01T00:00:00Z","timestamp":1541030400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2018,11,1]],"date-time":"2018-11-01T00:00:00Z","timestamp":1541030400000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2018,11,1]],"date-time":"2018-11-01T00:00:00Z","timestamp":1541030400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2018,11,1]],"date-time":"2018-11-01T00:00:00Z","timestamp":1541030400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100000185","name":"Defense Advanced Research Projects Agency","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000185","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"name":"STARnet SONIC"},{"DOI":"10.13039\/100015269","name":"Stanford SystemX Alliance","doi-asserted-by":"crossref","id":[{"id":"10.13039\/100015269","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2018,11]]},"DOI":"10.1109\/jssc.2018.2870560","type":"journal-article","created":{"date-parts":[[2018,10,3]],"date-time":"2018-10-03T18:26:51Z","timestamp":1538591211000},"page":"3183-3196","source":"Crossref","is-referenced-by-count":69,"title":["Hyperdimensional Computing Exploiting Carbon Nanotube FETs, Resistive RAM, and Their Monolithic 3D Integration"],"prefix":"10.1109","volume":"53","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2187-0473","authenticated-orcid":false,"given":"Tony F.","family":"Wu","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3393-9252","authenticated-orcid":false,"given":"Haitong","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2021-6381","authenticated-orcid":false,"given":"Ping-Chen","family":"Huang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3141-4970","authenticated-orcid":false,"given":"Abbas","family":"Rahimi","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Gage","family":"Hills","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bryce","family":"Hodson","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9685-0891","authenticated-orcid":false,"given":"William","family":"Hwang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jan M.","family":"Rabaey","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0096-1472","authenticated-orcid":false,"given":"H.-S. Philip","family":"Wong","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2237-193X","authenticated-orcid":false,"given":"Max M.","family":"Shulaker","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5572-5194","authenticated-orcid":false,"given":"Subhasish","family":"Mitra","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref39","first-page":"338","article-title":"A 16 Gb ReRAM with 200 MB\/s write and 1 GB\/s read in 27 nm technology","author":"fackenthal","year":"2014","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref38","first-page":"1","article-title":"Performance improvements by SL-current limiter and novel programming methods on 16 MB RRAM chip","author":"chen","year":"2017","journal-title":"Proc IMW"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2016.7573431"},{"key":"ref32","doi-asserted-by":"crossref","first-page":"526","DOI":"10.1038\/nature12502","article-title":"Carbon nanotube computer","volume":"501","author":"shulaker","year":"2013","journal-title":"Nature"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2015.2415492"},{"key":"ref30","first-page":"32.4.1","article-title":"Efficient metallic carbon nanotube removal for highly-scaled technologies","author":"shulaker","year":"2015","journal-title":"IEDM Tech Dig"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838348"},{"key":"ref36","first-page":"52","article-title":"Bi-layered RRAM with unlimited endurance and extremely uniform switching","author":"kim","year":"2011","journal-title":"Proc Symp VLSI Technol Dig Tech Papers"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2109033"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838428"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2781901"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.7b01164"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2012.2187527"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"436","DOI":"10.1038\/nature14539","article-title":"Deep learning","volume":"521","author":"lecun","year":"2015","journal-title":"Nature"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"139","DOI":"10.1007\/s12559-009-9009-8","article-title":"Hyperdimensional computing: An introduction to computing in distributed representation with high-dimensional random vectors","volume":"1","author":"kanerva","year":"2009","journal-title":"Cognit Comput"},{"key":"ref20","doi-asserted-by":"crossref","DOI":"10.4108\/eai.22-3-2017.152397","article-title":"Hyperdimensional computing for noninvasive brain-computer interfaces: Blind and one-shot classification of EEG error-related potentials","author":"rahimi","year":"2017","journal-title":"Proc BICT"},{"key":"ref22","first-page":"1","article-title":"Analogy making and logical inference on images using cellular automata based hyperdimensional computing","author":"yilmaz","year":"2015","journal-title":"Proc 2015th Int Conf Cogn Comput Integrating Neural Symbolic Approaches"},{"key":"ref21","author":"rahimi","year":"0","journal-title":"HDC Language Recognition"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7047164"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2007.911051"},{"key":"ref26","doi-asserted-by":"crossref","first-page":"271","DOI":"10.1126\/science.aaj1628","article-title":"Scaling carbon nanotube complementary transistors to 5-nm gate lengths","volume":"355","author":"qiu","year":"2017","journal-title":"Science"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.7b00861"},{"key":"ref50","first-page":"240","article-title":"A 28 nm 400 MHz 4-parallel 1.6 Gsearch\/s 80 Mb ternary CAM","author":"nii","year":"2014","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref51","author":"hills","year":"2017","journal-title":"Variation-Aware Nanosystem Design Kit"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2017.115"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6479018"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2018.8351756"},{"key":"ref53","first-page":"14.2.1","article-title":"Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells","author":"chen","year":"2014","journal-title":"IEDM Tech Dig"},{"key":"ref52","article-title":"Energy-efficient digital VLSI using carbon nanotube field-effect transistors","author":"hills","year":"2017"},{"key":"ref10","doi-asserted-by":"crossref","first-page":"24","DOI":"10.1109\/MC.2015.376","article-title":"Energy-efficient abundant-data computing: The N3XT 1,000x","volume":"48","author":"aly","year":"2015","journal-title":"IEEE Comput"},{"key":"ref11","doi-asserted-by":"crossref","first-page":"74","DOI":"10.1038\/nature22994","article-title":"Three-dimensional integration of nanotechnologies for computing and data storage on a single chip","volume":"547","author":"shulaker","year":"2017","journal-title":"Nature"},{"key":"ref40","first-page":"200","article-title":"A 4 Mb embedded SLC resistive-RAM macro with 7.2 ns read-write random-access time and 160 ns MLC-access capability","author":"sheu","year":"2011","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref12","article-title":"Short course","author":"chang","year":"2012","journal-title":"IEDM Tech Dig"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2012.2190369"},{"key":"ref14","article-title":"3D nanosystems enabled embedded abundant-data computing","author":"hwang","year":"2017","journal-title":"Proc CODES+ISSS"},{"key":"ref15","first-page":"492","article-title":"Brain-inspired computing exploiting carbon nanotube FETs and resistive RAM: Hyperdimensional computing case study","author":"wu","year":"2018","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/0004-3702(90)90004-J"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/72.377968"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1145\/2934583.2934624"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/ICRC.2016.7738683"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2015.29"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2705051"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1145\/2465787.2465794"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2017.2761740"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2015.7223698"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/VTSA.2007.378923"},{"key":"ref49","first-page":"1799","article-title":"Corpus portal for search in monolingual corpora","author":"quasthoff","year":"2006","journal-title":"Proc 5th Int Conf Lang Resources Eval"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/VTSA.2008.4530806"},{"key":"ref46","author":"lee","year":"2015","journal-title":"Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model"},{"key":"ref45","first-page":"27.4.1","article-title":"Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs","author":"shulaker","year":"2014","journal-title":"IEDM Tech Dig"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2016.7527507"},{"key":"ref47","author":"koehn","year":"2005","journal-title":"Europarl A Parallel Corpus for Statistical Machine Translation"},{"key":"ref42","first-page":"38","article-title":"A 28 nm poly\/SiON CMOS technology for low-power SoC applications","author":"liang","year":"2011","journal-title":"Symp VLSI Technol Dig Tech Papers"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2012.11.050"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2009.2016562"},{"key":"ref43","first-page":"7.3.1","article-title":"Advances, challenges and opportunities in 3D CMOS sequential integration","author":"batude","year":"2011","journal-title":"IEDM Tech Dig"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"https:\/\/ieeexplore.ieee.org\/ielaam\/4\/8515210\/8480107-aam.pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/8515210\/08480107.pdf?arnumber=8480107","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,4,8]],"date-time":"2022-04-08T18:55:50Z","timestamp":1649444150000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8480107\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,11]]},"references-count":56,"journal-issue":{"issue":"11"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2018.2870560","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,11]]}}}