{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,1]],"date-time":"2026-05-01T20:19:34Z","timestamp":1777666774087,"version":"3.51.4"},"reference-count":41,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"2","license":[{"start":{"date-parts":[[2019,2,1]],"date-time":"2019-02-01T00:00:00Z","timestamp":1548979200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,2,1]],"date-time":"2019-02-01T00:00:00Z","timestamp":1548979200000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,2,1]],"date-time":"2019-02-01T00:00:00Z","timestamp":1548979200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,2,1]],"date-time":"2019-02-01T00:00:00Z","timestamp":1548979200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"name":"U.S. ATLAS"},{"DOI":"10.13039\/100000015","name":"U.S. Department of Energy","doi-asserted-by":"publisher","award":["258086"],"award-info":[{"award-number":["258086"]}],"id":[{"id":"10.13039\/100000015","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2019,2]]},"DOI":"10.1109\/jssc.2018.2879942","type":"journal-article","created":{"date-parts":[[2018,12,7]],"date-time":"2018-12-07T20:29:38Z","timestamp":1544214578000},"page":"441-451","source":"Crossref","is-referenced-by-count":25,"title":["A 78.5-dB SNDR Radiation- and Metastability-Tolerant Two-Step Split SAR ADC Operating Up to 75 MS\/s With 24.9-mW Power Consumption in 65-nm CMOS"],"prefix":"10.1109","volume":"54","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8039-967X","authenticated-orcid":false,"given":"Hongda","family":"Xu","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2368-3775","authenticated-orcid":false,"given":"Hai","family":"Huang","sequence":"additional","affiliation":[]},{"given":"Yongda","family":"Cai","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7157-2861","authenticated-orcid":false,"given":"Ling","family":"Du","sequence":"additional","affiliation":[]},{"given":"Yuan","family":"Zhou","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5879-8225","authenticated-orcid":false,"given":"Benwei","family":"Xu","sequence":"additional","affiliation":[]},{"given":"Datao","family":"Gong","sequence":"additional","affiliation":[]},{"given":"Jingbo","family":"Ye","sequence":"additional","affiliation":[]},{"given":"Yun","family":"Chiu","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","author":"farthouat","year":"2013","journal-title":"Radiation tolerant electronics new safety factors"},{"key":"ref38","first-page":"1","author":"dentan","year":"2000","journal-title":"ATLAS Policy on Radiation Tolerant Electronics (Rev 2)"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2108133"},{"key":"ref32","first-page":"382","article-title":"A 0.06 mm2 8.9 b ENOB 40 MS\/s pipelined SAR ADC in 65 nm CMOS","author":"furuta","year":"2010","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/4.972143"},{"key":"ref30","first-page":"1","article-title":"A 16-bit 16-MS\/s SAR ADC with on-chip calibration in 55-nm CMOS","author":"shen","year":"2017","journal-title":"Symp VLSI Circuits Dig Tech Papers"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2384025"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2011.2123590"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/4.210039"},{"key":"ref34","first-page":"176","article-title":"A 1.2 V 10 b 20 MSample\/s non-binary successive approximation ADC in 0.13 $\\mu\\text{m}$ CMOS","author":"kuttner","year":"2002","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref10","article-title":"Radiation effects on electronic components and circuits","author":"dentan","year":"2000"},{"key":"ref40","first-page":"64","year":"2015","journal-title":"ATLAS Phase-II Upgrade Scoping Document (Rev 1)"},{"key":"ref11","doi-asserted-by":"crossref","first-page":"474","DOI":"10.1093\/oso\/9780198507338.003.0014","author":"holmes-siedle","year":"2002","journal-title":"Handbook of Radiation Effects"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2003.813129"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2005.860698"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1016\/j.nima.2007.07.068"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.nima.2008.07.058"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2015.7063037"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2274113"},{"key":"ref18","first-page":"242","article-title":"A signal-independent background-calibrating 20 b 1 MS\/s SAR ADC with 0.3 ppm INL","author":"li","year":"2018","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2592623"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2017.7870468"},{"key":"ref4","doi-asserted-by":"crossref","first-page":"8003s","DOI":"10.1088\/1748-0221\/3\/08\/S08003","article-title":"The ATLAS experiment at the CERN Large Hadron Collider","volume":"3","author":"aad","year":"2008","journal-title":"J Instrum"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.856291"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ANIMMA.2015.7465509"},{"key":"ref6","first-page":"28","year":"2012","journal-title":"Letter of Intent for the Phase-I Upgrade of the ATLAS Experiment"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2015.2417803"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1088\/1748-0221\/3\/08\/S08001"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1088\/1748-0221\/5\/09\/P09003"},{"key":"ref7","year":"2018","journal-title":"Figure"},{"key":"ref2","year":"0","journal-title":"Datasheet ADS1282-SP Radiation Tolerant High-Resolution Delta Sigma ADC"},{"key":"ref9","author":"bonacini","year":"2011","journal-title":"Redundancy methods in ASICs"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/NSSMIC.2016.8069940"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2014.6858371"},{"key":"ref22","first-page":"380","article-title":"A 12 b 22.5\/45MS\/s 3.0 mW 0.059 mm2 CMOS SAR ADC achieving over 90 dB SFDR","author":"liu","year":"2010","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.1997.585301"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2017.7870467"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1088\/1748-0221\/8\/09\/P09008"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2732731"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2013.2265963"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/24.488925"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"https:\/\/ieeexplore.ieee.org\/ielaam\/4\/8629373\/8568986-aam.pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/8629373\/08568986.pdf?arnumber=8568986","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,7,13]],"date-time":"2024-07-13T04:04:11Z","timestamp":1720843451000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8568986\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,2]]},"references-count":41,"journal-issue":{"issue":"2"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2018.2879942","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,2]]}}}