{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,28]],"date-time":"2025-09-28T06:52:23Z","timestamp":1759042343926,"version":"3.37.3"},"reference-count":32,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"9","license":[{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100004489","name":"Mitacs","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100004489","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2019,9]]},"DOI":"10.1109\/jssc.2019.2917155","type":"journal-article","created":{"date-parts":[[2019,6,11]],"date-time":"2019-06-11T19:50:40Z","timestamp":1560282640000},"page":"2375-2387","source":"Crossref","is-referenced-by-count":27,"title":["Design of a 55-nm SiGe BiCMOS 5-bit Time-Interleaved Flash ADC for 64-Gbd 16-QAM Fiberoptics Applications"],"prefix":"10.1109","volume":"54","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2084-0539","authenticated-orcid":false,"given":"Alireza","family":"Zandieh","sequence":"first","affiliation":[]},{"given":"Peter","family":"Schvan","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5134-1970","authenticated-orcid":false,"given":"Sorin P.","family":"Voinigescu","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/BCICTS.2018.8550977"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2011.5940601"},{"journal-title":"Taranto Towards Advanced Bicmos Nanotechnology Platforms for Rf and Thz Applications France (TARANTO)","year":"2017","key":"ref30"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2017.2672721"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/BCICTS.2018.8550990"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/BCTM.2016.7738955"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/BCICTS.2018.8550842"},{"key":"ref14","first-page":"3.9.1","article-title":"A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT\/370 GHz fMAXHBT and high-Q millimeter-wave passives","author":"chevalier","year":"2014","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2008.51"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2016.7540036"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2017.8240468"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2519397"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2014.6757479"},{"key":"ref28","first-page":"484","article-title":"29.2 A transmitter and receiver for 100 Gb\/s coherent networks with integrated \n$4\\times64$\nGS\/s 8b ADCs and DACs in 20 nm CMOS","author":"cao","year":"2017","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref4","first-page":"120","article-title":"A 400 Gb\/s transceiver for PAM-4 optical direct-detect application in 16 nm FinFET","author":"loi","year":"2019","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref27","first-page":"90","article-title":"A 30 GS\/s 6bit SiGe ADC with input bandwidth over 18 GHz and full data rate interface","author":"wu","year":"2016","journal-title":"Proc IEEE Bipolar\/BiCMOS Circuits Technol Meeting (BCTM)"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2859757"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/BCICTS.2018.8551125"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2018.2882285"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998154"},{"key":"ref8","first-page":"378","article-title":"22.1 A 90 GS\/s 8b 667 mW \n$64\\times$\n interleaved SAR ADC in 32 nm digital SOI CMOS","author":"kull","year":"2014","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref7","first-page":"14.1.1","article-title":"Intel 22 nm FinFET (22FFL) process technology for RF and mm Wave applications and circuit design optimization for FinFET technology","author":"lee","year":"2018","journal-title":"Proc IEEE Int Electron Devices Meeting (IEDM)"},{"key":"ref2","first-page":"390","article-title":"A 40GS\/s 6b ADC in 65 nm CMOS","author":"greshishchev","year":"2010","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2015.2500024"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2013.6659213"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/4.808916"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2316231"},{"key":"ref21","first-page":"407","article-title":"Design of a broadband microwave BJT active inductor circuit","volume":"1","author":"campbell","year":"1991","journal-title":"Proc 34th Midwest Symp Circuits Syst"},{"journal-title":"High-Speed DACs","year":"2014","key":"ref24"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2020657"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/BCTM.2017.8112929"},{"key":"ref25","first-page":"900","article-title":"A 50-GS\/s 5-b ADC in 0.18-\n$\\mu\\text{m}$\n SiGe BiCMOS","author":"lee","year":"2010","journal-title":"Proc IEEE MTT-S Int Microw Symp"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/8811631\/08734772.pdf?arnumber=8734772","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,13]],"date-time":"2022-07-13T20:47:08Z","timestamp":1657745228000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8734772\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,9]]},"references-count":32,"journal-issue":{"issue":"9"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2019.2917155","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"type":"print","value":"0018-9200"},{"type":"electronic","value":"1558-173X"}],"subject":[],"published":{"date-parts":[[2019,9]]}}}