{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T14:07:50Z","timestamp":1774966070555,"version":"3.50.1"},"reference-count":39,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"9","license":[{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100004663","name":"Ministry of Science and Technology, Taiwan","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100004663","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004368","name":"Taiwan Semiconductor Manufacturing Company","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100004368","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2019,9]]},"DOI":"10.1109\/jssc.2019.2924094","type":"journal-article","created":{"date-parts":[[2019,7,11]],"date-time":"2019-07-11T19:59:32Z","timestamp":1562875172000},"page":"2614-2621","source":"Crossref","is-referenced-by-count":16,"title":["Self-Convergent Trimming SRAM True Random Number Generation With In-Cell Storage"],"prefix":"10.1109","volume":"54","author":[{"given":"Po-Shao","family":"Yeh","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6410-8051","authenticated-orcid":false,"given":"Chih-An","family":"Yang","sequence":"additional","affiliation":[]},{"given":"Yi-Hong","family":"Chang","sequence":"additional","affiliation":[]},{"given":"Yue-Der","family":"Chih","sequence":"additional","affiliation":[]},{"given":"Chrong-Jung","family":"Lin","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4065-0350","authenticated-orcid":false,"given":"Ya-Chin","family":"King","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","first-page":"203","article-title":"2.4 GHz 7 mW all-digital PVT-variation tolerant True Random Number generator in 45 nm CMOS","author":"srinivasan","year":"2010","journal-title":"Proc Symp VLSI Circuits"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838349"},{"key":"ref33","first-page":"19.5.1","article-title":"A new saw-like self-recovery of interface states in nitride-based memory cell","author":"sung","year":"2014","journal-title":"IEDM Tech Dig"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/EDSSC.2008.4760701"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796662"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2006.346884"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/SYSCON.2018.8369491"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1049\/el.2013.2326"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/INCC.2004.1366592"},{"key":"ref34","first-page":"28.5.1","article-title":"Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis","author":"tseng","year":"2010","journal-title":"IEDM Tech Dig"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2018.8510671"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/INEC.2016.7589332"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6861157"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6479013"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2357585"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ASICON.2015.7517094"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ICSICT.2018.8565658"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2199734"},{"key":"ref18","first-page":"148","article-title":"Post-fabrication self-convergence scheme for suppressing variability in SRAM cells and logic transistors","author":"suzuki","year":"2009","journal-title":"Proc Symp VLSI Technol"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/ICECS.2015.7440346"},{"key":"ref28","first-page":"1","article-title":"Measurement of mismatch factor and noise of SRAM PUF using small bias voltage","author":"cui","year":"2017","journal-title":"Proc IEEE Int Conf Microelectron Test Structures (ICMTS)"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/SAI.2017.8252190"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2496257"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/MECO.2018.8406028"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/DASIP.2014.7115613"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2685634"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2018.2840049"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2250477"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2017.8051019"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2015.7085443"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2016.7527159"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1145\/2968455.2968519"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/ISOCC.2012.6407117"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2018169"},{"key":"ref21","first-page":"91","article-title":"A new self-aligned nitride MTP cell with 45 nm CMOS fully compatible process","author":"huang","year":"2007","journal-title":"IEDM Tech Dig"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838432"},{"key":"ref23","first-page":"1","article-title":"32 nm strained nitride MTP cell by fully CMOS logic compatible process","author":"shen","year":"2012","journal-title":"Proc Tech Program VLSI Technol Syst Appl"},{"key":"ref26","first-page":"1","article-title":"Self-convergent trimming of embedded logic compatible OTP memory for VT variation reduction in low voltage SRAMs","author":"chien","year":"2014","journal-title":"Proc IEEE Int Sym VLSI Tech Syst and Appl (VLSI-TSA)"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2530563"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/8811631\/08759954.pdf?arnumber=8759954","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,13]],"date-time":"2022-07-13T20:47:07Z","timestamp":1657745227000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8759954\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,9]]},"references-count":39,"journal-issue":{"issue":"9"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2019.2924094","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,9]]}}}