{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,2]],"date-time":"2026-07-02T05:13:54Z","timestamp":1782969234877,"version":"3.54.5"},"reference-count":35,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"2","license":[{"start":{"date-parts":[[2020,2,1]],"date-time":"2020-02-01T00:00:00Z","timestamp":1580515200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,2,1]],"date-time":"2020-02-01T00:00:00Z","timestamp":1580515200000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,2,1]],"date-time":"2020-02-01T00:00:00Z","timestamp":1580515200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,2,1]],"date-time":"2020-02-01T00:00:00Z","timestamp":1580515200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100008982","name":"National Science Foundation","doi-asserted-by":"publisher","award":["ECCS 1408547"],"award-info":[{"award-number":["ECCS 1408547"]}],"id":[{"id":"10.13039\/501100008982","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100008982","name":"National Science Foundation","doi-asserted-by":"publisher","award":["ECCS 1611575"],"award-info":[{"award-number":["ECCS 1611575"]}],"id":[{"id":"10.13039\/501100008982","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100014553","name":"Samsung Advanced Institute of Technology","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100014553","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2020,2]]},"DOI":"10.1109\/jssc.2019.2945263","type":"journal-article","created":{"date-parts":[[2019,10,23]],"date-time":"2019-10-23T20:27:32Z","timestamp":1571862452000},"page":"282-297","source":"Crossref","is-referenced-by-count":61,"title":["A CMOS Two-Element 170-GHz Fundamental-Frequency Transmitter With Direct RF-8PSK Modulation"],"prefix":"10.1109","volume":"55","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3788-2591","authenticated-orcid":false,"given":"Peyman","family":"Nazari","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Saman","family":"Jafarlou","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1008-1559","authenticated-orcid":false,"given":"Payam","family":"Heydari","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2626340"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.1991.146979"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2017.2745858"},{"key":"ref30","first-page":"776","article-title":"An 85-95.2 GHz transformer-based injection-locked frequency tripler in 65 nm CMOS","author":"chen","year":"2010","journal-title":"IEEE MTT-S Int Microw Symp Dig"},{"key":"ref35","first-page":"1","article-title":"A 20 Gbit\/s RFDAC-based direct-modulation W-band transmitter in 32 nm SOI CMOS","author":"al-rubaye","year":"2016","journal-title":"IEEE Compound Semiconductor Integrated Circuit Symp"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2016.2607231"},{"key":"ref10","first-page":"308","article-title":"A 105 Gb\/s 300 GHz CMOS transmitter","author":"takano","year":"2017","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2019.2944855"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2014.2300844"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2016.2533491"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2017.7870442"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2016.7417997"},{"key":"ref16","first-page":"168","article-title":"A 120 Gb\/s 16 QAM CMOS millimeter-wave wireless transceiver","author":"tokgoz","year":"2018","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1007\/s10762-014-0140-6"},{"key":"ref18","first-page":"28","article-title":"A 140 GHz transmitter with an integrated chip-to-waveguide transition using 130 nm SiGe BiCMOS process","author":"he","year":"2018","journal-title":"Proc Asia–Pacific Microw Conf"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2018.2792687"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2019.2931610"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2319259"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2019.2920117"},{"key":"ref3","year":"2019","journal-title":"Terahertz Interest Group (IGthz)"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2019.2899487"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/4.868034"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2015.2504930"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2018.8439850"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2017.2677908"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IRMMW-THz.2014.6956044"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1587\/transele.E98.C.1081"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/MMM.2011.940596"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2297415"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2015.2467179"},{"key":"ref21","first-page":"306","article-title":"A compact 130 GHz fully packaged point-to-point wireless system with 3D-printed 26 dBi lens antenna achieving 12.5 Gb\/s at 1.55 pj\/b\/m","author":"dolatsha","year":"2017","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref24","first-page":"20c","article-title":"A 1–5 GHz direct-digital RF modulator with an embedded time-approximation filter achieving ?43 dB EVM at 1024 QAM","author":"su","year":"2019","journal-title":"Proc IEEE Symp VLSI Circuits"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2886324"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2824318"},{"key":"ref25","first-page":"262","article-title":"A 13-bit 9 GS\/s RF DAC-based broadband transmitter in 28 nm CMOS","author":"xiao","year":"2013","journal-title":"Proc IEEE Symp VLSI Circuits"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"https:\/\/ieeexplore.ieee.org\/ielam\/4\/8972639\/8880486-aam.pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/8972639\/08880486.pdf?arnumber=8880486","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,4,27]],"date-time":"2022-04-27T13:39:31Z","timestamp":1651066771000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8880486\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,2]]},"references-count":35,"journal-issue":{"issue":"2"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2019.2945263","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,2]]}}}