{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,14]],"date-time":"2026-04-14T15:51:13Z","timestamp":1776181873846,"version":"3.50.1"},"reference-count":45,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"11","license":[{"start":{"date-parts":[[2021,11,1]],"date-time":"2021-11-01T00:00:00Z","timestamp":1635724800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,11,1]],"date-time":"2021-11-01T00:00:00Z","timestamp":1635724800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,11,1]],"date-time":"2021-11-01T00:00:00Z","timestamp":1635724800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2021,11]]},"DOI":"10.1109\/jssc.2021.3091546","type":"journal-article","created":{"date-parts":[[2021,8,10]],"date-time":"2021-08-10T20:18:11Z","timestamp":1628626691000},"page":"3318-3330","source":"Crossref","is-referenced-by-count":29,"title":["A 200-GHz Power Amplifier With a Wideband Balanced Slot Power Combiner and 9.4-dBm <i>P<\/i> \n                  <sub>sat<\/sub> in 65-nm CMOS: Embedded Power Amplification"],"prefix":"10.1109","volume":"56","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-6479-3810","authenticated-orcid":false,"given":"Hadi","family":"Bameri","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0644-9055","authenticated-orcid":false,"given":"Omeed","family":"Momeni","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.1974.1128278"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/TCT.1964.1082263"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2626340"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2013.6487649"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2012.6177001"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2019.8701022"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2016.2607231"},{"key":"ref36","first-page":"1184","article-title":"Theory of gain and stability of small-signal amplifiers with lossless reciprocal feedback","author":"amakawa","year":"2014","journal-title":"Proc Asia&#x2013;Pacific Microw Conf"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/22.137392"},{"key":"ref34","author":"spence","year":"1970","journal-title":"Linear Active Networks"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2015.2451355"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2015.2422695"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2016.2574310"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2017.2677908"},{"key":"ref13","first-page":"484","article-title":"A 1.1 V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines","author":"seo","year":"2009","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2017.2764739"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2012.2231875"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2003.822575"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TTHZ.2020.2965808"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2011.2163928"},{"key":"ref19","first-page":"190","article-title":"A 233-GHz low noise amplifier with 22.5dB gain in 0.13?m SiGe","author":"malz","year":"2014","journal-title":"Proc European Microwave Integrated Circuits Conf"},{"key":"ref28","first-page":"1","article-title":"A 190-GHz amplifier with gain-boosting technique in 65-nm CMOS","author":"siao","year":"2014","journal-title":"IEEE MTT-S Int Microw Symp Dig"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2018.2854174"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/APMC.2015.7413042"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2016.2623948"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2020.3005818"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2308292"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2019.2945263"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2702007"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2689031"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.2967833"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2727046"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2019.2943924"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2032273"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2297415"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2014.2350691"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2008.4561518"},{"key":"ref42","first-page":"82","article-title":"4.5 A 13.5dBm fully integrated 200-to-255GHz power amplifier with a 4-way power combiner in SiGe:C BiCMOS","author":"eissa","year":"2019","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref24","first-page":"163","article-title":"Theoretical study of optimal feedback LNA design","author":"ono","year":"2020","journal-title":"Proc IEEE Int Symp Radio-Freq Integr Technol (RFIT)"},{"key":"ref41","first-page":"193","article-title":"A 200&#x2013;225 GHz SiGe power amplifier with peak Psat of 9.6 dBm using wideband power combination","author":"sarmah","year":"2016","journal-title":"Proc ESSCIRC Conf 42nd Eur Solid-State Circuits Conf"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2012.2190092"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2019.2899515"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2019.2908335"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2017.2777106"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TTHZ.2020.3019361"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/9583614\/09509568.pdf?arnumber=9509568","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,5,10]],"date-time":"2022-05-10T14:54:53Z","timestamp":1652194493000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9509568\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,11]]},"references-count":45,"journal-issue":{"issue":"11"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2021.3091546","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,11]]}}}