{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,1]],"date-time":"2026-02-01T02:37:24Z","timestamp":1769913444096,"version":"3.49.0"},"reference-count":54,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"7","license":[{"start":{"date-parts":[[2022,7,1]],"date-time":"2022-07-01T00:00:00Z","timestamp":1656633600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2022,7,1]],"date-time":"2022-07-01T00:00:00Z","timestamp":1656633600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,7,1]],"date-time":"2022-07-01T00:00:00Z","timestamp":1656633600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100003382","name":"Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency","doi-asserted-by":"publisher","award":["JPMJCR1432"],"award-info":[{"award-number":["JPMJCR1432"]}],"id":[{"id":"10.13039\/501100003382","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2022,7]]},"DOI":"10.1109\/jssc.2021.3117260","type":"journal-article","created":{"date-parts":[[2021,10,14]],"date-time":"2021-10-14T01:51:23Z","timestamp":1634176283000},"page":"2250-2262","source":"Crossref","is-referenced-by-count":7,"title":["Via-Switch FPGA: 65-nm CMOS Implementation and Evaluation"],"prefix":"10.1109","volume":"57","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7478-8705","authenticated-orcid":false,"given":"Xu","family":"Bai","sequence":"first","affiliation":[{"name":"NanoBridge Semiconductor, Inc., Tsukuba, Ibaraki, Japan"}]},{"given":"Naoki","family":"Banno","sequence":"additional","affiliation":[{"name":"NanoBridge Semiconductor, Inc., Tsukuba, Ibaraki, Japan"}]},{"given":"Makoto","family":"Miyamura","sequence":"additional","affiliation":[{"name":"NanoBridge Semiconductor, Inc., Tsukuba, Ibaraki, Japan"}]},{"given":"Ryusuke","family":"Nebashi","sequence":"additional","affiliation":[{"name":"NanoBridge Semiconductor, Inc., Tsukuba, Ibaraki, Japan"}]},{"given":"Koichiro","family":"Okamoto","sequence":"additional","affiliation":[{"name":"NanoBridge Semiconductor, Inc., Tsukuba, Ibaraki, Japan"}]},{"given":"Hideaki","family":"Numata","sequence":"additional","affiliation":[{"name":"NanoBridge Semiconductor, Inc., Tsukuba, Ibaraki, Japan"}]},{"given":"Noriyuki","family":"Iguchi","sequence":"additional","affiliation":[{"name":"NanoBridge Semiconductor, Inc., Tsukuba, Ibaraki, Japan"}]},{"given":"Masanori","family":"Hashimoto","sequence":"additional","affiliation":[{"name":"Graduate School of Informatics, Kyoto University, Kyoto, Japan"}]},{"given":"Tadahiko","family":"Sugibayashi","sequence":"additional","affiliation":[{"name":"NanoBridge Semiconductor, Inc., Tsukuba, Ibaraki, Japan"}]},{"given":"Toshitsugu","family":"Sakamoto","sequence":"additional","affiliation":[{"name":"NanoBridge Semiconductor, Inc., Tsukuba, Ibaraki, Japan"}]},{"given":"Munehiro","family":"Tada","sequence":"additional","affiliation":[{"name":"NanoBridge Semiconductor, Inc., Tsukuba, Ibaraki, Japan"}]}],"member":"263","reference":[{"key":"ref39","first-page":"242t","article-title":"Bidirectional TaO-diode-selected, complementary atom switch (DCAS) for area-efficient, nonvolatile crossbar switch block","author":"okamoto","year":"2013","journal-title":"Proc Symp VLSI Technol"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409669"},{"key":"ref33","first-page":"28t","article-title":"A low-power cu atom switch programmable logic fabricated in a 40 nm-node CMOS technology","author":"bai","year":"2017","journal-title":"Proc Symp VLSI Technol"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2014.6783344"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6479020"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2204263"},{"key":"ref37","first-page":"10.5.1","article-title":"Nanoscale (~10 nm) 3D vertical ReRAM and NbO? threshold selector with TiN electrode","author":"cha","year":"2013","journal-title":"IEDM Tech Dig"},{"key":"ref36","first-page":"37","article-title":"Varistor-type bidirectional switch (JMAX>10?A\/cm², selectivity~104) for 3D bipolar resistive memory arrays","author":"lee","year":"2012","journal-title":"Proc Symp VLSI Technol (VLSIT)"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2293591"},{"key":"ref34","first-page":"127","article-title":"High-density and fault-tolerant cu atom switch technology toward 28 nm-node nonvolatile programmable logic","author":"nebashi","year":"2018","journal-title":"Proc IEEE Symp VLSI Technol"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2169070"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.23919\/DATE48585.2020.9116478"},{"key":"ref29","first-page":"228","article-title":"Programmable cell array using rewritable solid-electrolyte switch integrated in 90 nm CMOS","author":"miyamura","year":"2011","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TCC.2017.2665493"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2020.2988765"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2012.6177067"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2495262"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1145\/1950413.1950434"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2018.2874880"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2486802"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2016.2638542"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2778113"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/MM.2017.3711648"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.23919\/DATE.2019.8715183"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2019.2960331"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2018.2812914"},{"key":"ref52","first-page":"187","article-title":"Chapter 4.1. Low-power design techniques for state-of-the-art CMOS technologies","author":"gaudet","year":"2013","journal-title":"Recent Progress in the Boolean Domain"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2006.885731"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/MWSCAS.2019.8885346"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409614"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2014.2312499"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2016.2578278"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2932379"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2019.2930910"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1145\/2765491.2765510"},{"key":"ref17","first-page":"1","article-title":"A power-efficient reconfigurable architecture using PCM configuration technology","author":"ahari","year":"2014","journal-title":"Proc Conf Design Autom Test Eur (DATE)"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2010.2063444"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/FPL.2012.6339206"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JIOT.2019.2908264"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ICPS.2019.8733348"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2018.2890150"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JETCAS.2019.2951232"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2372034"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1561\/1000000005"},{"key":"ref49","year":"2021","journal-title":"The Automotive-Grade Device Handbook"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2006.884574"},{"key":"ref46","first-page":"1","article-title":"A fast and low-voltage cu complementary-atom-switch 1 Mb array with high-temperature retention","author":"banno","year":"2014","journal-title":"Symp VLSI Technol (VLSI-Technology) Dig Tech Papers"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2006.251266"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1145\/2068716.2068718"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/FPT.2004.1393249"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2922352"},{"key":"ref41","first-page":"16.4.1","article-title":"50×20 crossbar switch block (CSB) with two-varistors (a-Si\/SiN\/a-Si) selected complementary atom switch for a highly-dense reconfigurable logic","author":"banno","year":"2016","journal-title":"IEDM Tech Dig"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnology18217.2020.9265046"},{"key":"ref43","first-page":"502","article-title":"Via-switch FPGA: 65 nm CMOS implementation and architecture extension for al applications","author":"hashimoto","year":"2020","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/9809766\/09569775.pdf?arnumber=9569775","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,3]],"date-time":"2024-05-03T18:43:34Z","timestamp":1714761814000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9569775\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,7]]},"references-count":54,"journal-issue":{"issue":"7"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2021.3117260","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,7]]}}}