{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,6]],"date-time":"2026-06-06T16:28:57Z","timestamp":1780763337828,"version":"3.54.1"},"reference-count":32,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"4","license":[{"start":{"date-parts":[[2022,4,1]],"date-time":"2022-04-01T00:00:00Z","timestamp":1648771200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2022,4,1]],"date-time":"2022-04-01T00:00:00Z","timestamp":1648771200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,4,1]],"date-time":"2022-04-01T00:00:00Z","timestamp":1648771200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100004358","name":"Samsung Electronics\u2019 Internal Research Fund","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100004358","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2022,4]]},"DOI":"10.1109\/jssc.2022.3142436","type":"journal-article","created":{"date-parts":[[2022,2,2]],"date-time":"2022-02-02T21:39:58Z","timestamp":1643837998000},"page":"1125-1137","source":"Crossref","is-referenced-by-count":46,"title":["2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory"],"prefix":"10.1109","volume":"57","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5819-1378","authenticated-orcid":false,"given":"Min-Woong","family":"Seo","sequence":"first","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2756-3976","authenticated-orcid":false,"given":"Myunglae","family":"Chu","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0933-0896","authenticated-orcid":false,"given":"Hyun-Yong","family":"Jung","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Suksan","family":"Kim","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiyoun","family":"Song","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6535-8378","authenticated-orcid":false,"given":"Daehee","family":"Bae","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sanggwon","family":"Lee","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8959-3476","authenticated-orcid":false,"given":"Junan","family":"Lee","sequence":"additional","affiliation":[{"name":"System LSI, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sung-Yong","family":"Kim","sequence":"additional","affiliation":[{"name":"System LSI, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jongyeon","family":"Lee","sequence":"additional","affiliation":[{"name":"System LSI, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Minkyung","family":"Kim","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7822-4288","authenticated-orcid":false,"given":"Gwi-Deok","family":"Lee","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Heesung","family":"Shim","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Changyong","family":"Um","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Changhwa","family":"Kim","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"In-Gyu","family":"Baek","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Doowon","family":"Kwon","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hongki","family":"Kim","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyuksoon","family":"Choi","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jonghyun","family":"Go","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jungchak","family":"Ahn","sequence":"additional","affiliation":[{"name":"System LSI, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jae-Kyu","family":"Lee","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chang-Rok","family":"Moon","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kyupil","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Institute of Technology (SSIT), Samsung Electronics, Yongin-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyoung-Sub","family":"Kim","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9062924"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614565"},{"key":"ref3","first-page":"1","article-title":"Back-illuminated 2.74 \u03bcm-pixel-pitch global shutter CMOS image sensor with charge-domain memory achieving 10k e-saturation signal","volume-title":"IEDM Tech. Dig.","author":"Kumagai","year":"2018"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.891655"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2737143"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9063092"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2867367"},{"key":"ref8","first-page":"1","article-title":"A 2.2mu stacked back side illuminated voltage domain global shutter CMOS image sensor","volume-title":"IEDM Tech. Dig.","author":"Park","year":"2019"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2013.6487824"},{"key":"ref10","first-page":"79","article-title":"A back-illuminated global-shutter CMOS image sensor with pixel-parallel 14b subthreshold ADC","volume-title":"IEEE ISSCC Dig. Tech. Papers","author":"Sakakibara"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2784759"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9371913"},{"key":"ref13","first-page":"308","article-title":"A 4.0\u03bcm stacked digital pixel sensor operating in a dual quantization mode for high dynamic range","volume-title":"Proc. Int. Image Sensor Workshop (IISW)","author":"Mori"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2016.7573544"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.23919\/VLSICircuits52068.2021.9492357"},{"key":"ref16","first-page":"168","article-title":"A 200 mW 3.3 V CMOS color camera IC producing 352\u00d7288 24b video at 30 frames\/s","volume-title":"IEEE ISSCC Dig. Tech. Papers","author":"Loinaz"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.1998.672420"},{"key":"ref18","first-page":"20","article-title":"CMOS digital camera with parallel analog-to-digital conversion architecture","volume-title":"Proc. IEEE Workshop Charge Coupled Devices Adv. Image Sensors","author":"Dickinson"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1117\/12.262529"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2006.1696261"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2010.5433971"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2030635"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.858477"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2019.2928204"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2008.4585983"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2795005"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2164298"},{"key":"ref28","first-page":"394","article-title":"A 2.1 Mpixel 120frame\/s CMOS image sensor with column-parallel \u0394\u03a3 ADC architecture","volume-title":"IEEE ISSCC Dig. Tech. Papers","author":"Chae"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.2352\/EI.2022.34.7.ISS-256"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2008.2002547"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2017.7870268"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2639741"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/9741814\/09701661.pdf?arnumber=9701661","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,1,17]],"date-time":"2024-01-17T22:49:44Z","timestamp":1705531784000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9701661\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,4]]},"references-count":32,"journal-issue":{"issue":"4"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2022.3142436","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,4]]}}}