{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,26]],"date-time":"2026-03-26T19:21:31Z","timestamp":1774552891040,"version":"3.50.1"},"reference-count":40,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"1","license":[{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100001809","name":"NSFC","doi-asserted-by":"publisher","award":["92164204"],"award-info":[{"award-number":["92164204"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"NSFC","doi-asserted-by":"publisher","award":["62222119"],"award-info":[{"award-number":["62222119"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"NSFC","doi-asserted-by":"publisher","award":["62025406"],"award-info":[{"award-number":["62025406"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002367","name":"Strategic Priority Research Program of the Chinese Academy of Sciences","doi-asserted-by":"publisher","award":["XDB44000000"],"award-info":[{"award-number":["XDB44000000"]}],"id":[{"id":"10.13039\/501100002367","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2024,1]]},"DOI":"10.1109\/jssc.2023.3320659","type":"journal-article","created":{"date-parts":[[2023,10,11]],"date-time":"2023-10-11T17:46:19Z","timestamp":1697046379000},"page":"208-218","source":"Crossref","is-referenced-by-count":18,"title":["A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5\/7-ns Read\/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier<sup\/>"],"prefix":"10.1109","volume":"59","author":[{"ORCID":"https:\/\/orcid.org\/0009-0005-5258-2190","authenticated-orcid":false,"given":"Qiqiao","family":"Wu","sequence":"first","affiliation":[{"name":"Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China"}]},{"given":"Yue","family":"Cao","sequence":"additional","affiliation":[{"name":"Zhangjiang Laboratory, Shanghai, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3419-4400","authenticated-orcid":false,"given":"Qing","family":"Luo","sequence":"additional","affiliation":[{"name":"Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China"}]},{"given":"Haijun","family":"Jiang","sequence":"additional","affiliation":[{"name":"Zhangjiang Laboratory, Shanghai, China"}]},{"given":"Zhongze","family":"Han","sequence":"additional","affiliation":[{"name":"Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China"}]},{"given":"Yongkang","family":"Han","sequence":"additional","affiliation":[{"name":"Zhangjiang Laboratory, Shanghai, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2192-9655","authenticated-orcid":false,"given":"Chunmeng","family":"Dou","sequence":"additional","affiliation":[{"name":"Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4727-9224","authenticated-orcid":false,"given":"Hangbing","family":"Lv","sequence":"additional","affiliation":[{"name":"Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7062-831X","authenticated-orcid":false,"given":"Qi","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3387-1238","authenticated-orcid":false,"given":"Jianguo","family":"Yang","sequence":"additional","affiliation":[{"name":"Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0937-7547","authenticated-orcid":false,"given":"Ming","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISLPED52811.2021.9502489"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2021.3069682"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/isscc42613.2021.9365945"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/isscc19947.2020.9062955"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/isscc.2017.7870329"},{"key":"ref6","first-page":"33.1.1","article-title":"16 kbit HfO2:Si-based 1T\u20131C FeRAM arrays demonstrating high performance operation and solder reflow compatibility","volume-title":"IEDM Tech. Dig.","author":"Francois","year":"2021"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnology18217.2020.9265063"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/isscc.2011.5746285"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/isscc.2018.8310395"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2007.4339702"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ICSICT.2006.306440"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268515"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409772"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2017.2734819"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2007.4339743"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724726"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2016.7573405"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.2976148"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/NVMTS.2011.6137107"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1063\/1.3634052"},{"key":"ref21","first-page":"28.1.1","article-title":"Anti-ferroelectric HfxZr1-xO2 capacitors for high-density 3-D embedded-DRAM","volume-title":"IEDM Tech. Dig.","author":"Chang"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/iedm19573.2019.8993485"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2846570"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2022.3153063"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2023.3238120"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2021.3129279"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201602787"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2016.2563660"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2020.2972545"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2009.2039949"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2009.2024325"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/isscc42615.2023.10067752"},{"key":"ref33","first-page":"1","article-title":"105 \u00d7 endurance improvement of FE-HZO by an innovative rejuvenation method for 1z node NV-DRAM applications","volume-title":"Proc. Symp. VLSI Technol.","author":"Gong"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1007\/s11837-018-3140-5"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/isscc.2006.1696082"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2015.2405932"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/isscc.2018.8310393"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2022.3168069"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2009.2034380"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2034414"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/10375801\/10278171.pdf?arnumber=10278171","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,1,12]],"date-time":"2024-01-12T01:51:18Z","timestamp":1705024278000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10278171\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,1]]},"references-count":40,"journal-issue":{"issue":"1"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2023.3320659","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,1]]}}}