{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,11]],"date-time":"2026-03-11T16:23:46Z","timestamp":1773246226223,"version":"3.50.1"},"reference-count":42,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"2","license":[{"start":{"date-parts":[[2025,2,1]],"date-time":"2025-02-01T00:00:00Z","timestamp":1738368000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2025,2,1]],"date-time":"2025-02-01T00:00:00Z","timestamp":1738368000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,2,1]],"date-time":"2025-02-01T00:00:00Z","timestamp":1738368000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2025,2]]},"DOI":"10.1109\/jssc.2024.3424264","type":"journal-article","created":{"date-parts":[[2024,7,24]],"date-time":"2024-07-24T18:32:22Z","timestamp":1721845942000},"page":"615-625","source":"Crossref","is-referenced-by-count":1,"title":["A 1.8-V GPIO With Design-Technology-Reliability Co-Optimization in Sub-3-nm GAA-NS Technology"],"prefix":"10.1109","volume":"60","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-1298-6693","authenticated-orcid":false,"given":"Wen-Chieh","family":"Chen","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Faculty of Engineering Science, KU Levuen, Leuven, Belgium"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6481-2951","authenticated-orcid":false,"given":"Shih-Hung","family":"Chen","sequence":"additional","affiliation":[{"name":"Advanced Reliability Robustness and Testing Department, imec, Heverlee, Belgium"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8932-8990","authenticated-orcid":false,"given":"Man-Ching","family":"Huang","sequence":"additional","affiliation":[{"name":"Advanced Reliability Robustness and Testing Department, imec, Heverlee, Belgium"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2555-5622","authenticated-orcid":false,"given":"Shu-Wei","family":"Chang","sequence":"additional","affiliation":[{"name":"Advanced Reliability Robustness and Testing Department, imec, Heverlee, Belgium"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5376-2119","authenticated-orcid":false,"given":"Geert","family":"Hellings","sequence":"additional","affiliation":[{"name":"Advanced Reliability Robustness and Testing Department, imec, Heverlee, Belgium"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3763-2098","authenticated-orcid":false,"given":"Guido","family":"Groeseneken","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Faculty of Engineering Science, KU Levuen, Leuven, Belgium"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2017.8268472"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2016.7838334"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/isscc.1999.759244"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/jssc.2006.881546"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/isne.2019.8896437"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/tcsii.2020.2967868"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2009.09.004"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424364"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838456"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.23919\/vlsit.2017.7998183"},{"key":"ref11","volume-title":"14nm Process Technology: Opening New Horizons","author":"Bohr","year":"2017"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC55479.2022.9947139"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2018.8510654"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19574.2021.9720507"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2019.8720573"},{"key":"ref16","first-page":"1","article-title":"External I\/O interfaces in sub-5nm GAA NS technology and STCO scaling options","volume-title":"Proc. Symp. VLSI Technol.","author":"Chen"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4615-3204-0"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/ISICIR.2007.4441922"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.843599"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2010.2050941"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/4.910493"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/tcsii.2006.884118"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/CCECE.2016.7726692"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936265"},{"key":"ref25","first-page":"15","article-title":"Hot carrier effect in ultra-scaled replacement metal gate Si1-xGex channel p-FinFETs","volume-title":"IEDM Tech. Dig.","author":"Wang"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353601"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268343"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/ICICDT.2015.7165893"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2002.1175806"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.872734"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2019.2952554"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/ICECS.2006.379877"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/ISIE.2007.4374695"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/81.260219"},{"key":"ref35","volume-title":"IMEC iN5 Lateral NSH Compact","year":"2020"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2881923"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2005.1493117"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936331"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998152"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2016.7573374"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48227.2022.9764470"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/TSM.2003.815200"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/4\/10857664\/10608106.pdf?arnumber=10608106","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,1,30]],"date-time":"2025-01-30T05:37:11Z","timestamp":1738215431000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10608106\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,2]]},"references-count":42,"journal-issue":{"issue":"2"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2024.3424264","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,2]]}}}