{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,17]],"date-time":"2026-03-17T18:25:39Z","timestamp":1773771939722,"version":"3.50.1"},"reference-count":25,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"2","license":[{"start":{"date-parts":[[2026,2,1]],"date-time":"2026-02-01T00:00:00Z","timestamp":1769904000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2026,2,1]],"date-time":"2026-02-01T00:00:00Z","timestamp":1769904000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,2,1]],"date-time":"2026-02-01T00:00:00Z","timestamp":1769904000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100003052","name":"Technology Innovation Program funded by the Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["2410000103"],"award-info":[{"award-number":["2410000103"]}],"id":[{"id":"10.13039\/501100003052","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003052","name":"Technology Innovation Program funded by the Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["RS-2022-00144300"],"award-info":[{"award-number":["RS-2022-00144300"]}],"id":[{"id":"10.13039\/501100003052","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea (NRF) Grant funded by Korea Government","doi-asserted-by":"publisher","award":["RS-2024-00405495"],"award-info":[{"award-number":["RS-2024-00405495"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2026,2]]},"DOI":"10.1109\/jssc.2025.3576439","type":"journal-article","created":{"date-parts":[[2025,6,11]],"date-time":"2025-06-11T13:44:40Z","timestamp":1749649480000},"page":"434-447","source":"Crossref","is-referenced-by-count":1,"title":["A 1.19-pJ\/b 32-Gb\/s Baud-Rate Receiver Employing 2UI Integrated Pattern-Based CDR and DFE Adaptation Without Data-Level Reference"],"prefix":"10.1109","volume":"61","author":[{"given":"Suil","family":"Kang","sequence":"first","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"}]},{"ORCID":"https:\/\/orcid.org\/0009-0007-7921-5766","authenticated-orcid":false,"given":"Sinho","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"}]},{"given":"Young-Wook","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of System Semiconductor Engineering, the Department of Electrical and Electronic Engineering, and the BK21 Graduate Program in Intelligent Semiconductor Technology, Yonsei University, Seoul, South Korea"}]},{"given":"Junhak","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of System Semiconductor Engineering, the Department of Electrical and Electronic Engineering, and the BK21 Graduate Program in Intelligent Semiconductor Technology, Yonsei University, Seoul, South Korea"}]},{"given":"Ho-Joon","family":"Shin","sequence":"additional","affiliation":[{"name":"Department of System Semiconductor Engineering, the Department of Electrical and Electronic Engineering, and the BK21 Graduate Program in Intelligent Semiconductor Technology, Yonsei University, Seoul, South Korea"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1342-7877","authenticated-orcid":false,"given":"Haram","family":"Ju","sequence":"additional","affiliation":[{"name":"Korea Electronics Technology Institute (KETI), Seongnam, South Korea"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6593-0354","authenticated-orcid":false,"given":"Kwangho","family":"Lee","sequence":"additional","affiliation":[{"name":"Korea Electronics Technology Institute (KETI), Seongnam, South Korea"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4727-9868","authenticated-orcid":false,"given":"Kwanseo","family":"Park","sequence":"additional","affiliation":[{"name":"Department of System Semiconductor Engineering, the Department of Electrical and Electronic Engineering, and the BK21 Graduate Program in Intelligent Semiconductor Technology, Yonsei University, Seoul, South Korea"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2015.2497963"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2594209"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/LSSC.2019.2938677"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2021.3116485"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2022.3140778"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2022.3212082"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2023.3263963"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TCOM.1976.1093326"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2024.3353197"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2019.8662379"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2010.5433823"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2015.7062987"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIC.2019.8778084"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2004.842863"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2009.4977461"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2020.3029079"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2023.3277838"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2740268"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2744661"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC42615.2023.10067541"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ESSERC62670.2024.10719522"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/VLSICircuits18222.2020.9162791"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2024.3391378"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2885540"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/jssc.2025.3532963"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/4\/11368630\/11030828.pdf?arnumber=11030828","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,1,30]],"date-time":"2026-01-30T21:03:30Z","timestamp":1769807010000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11030828\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,2]]},"references-count":25,"journal-issue":{"issue":"2"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2025.3576439","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,2]]}}}