{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T21:05:30Z","timestamp":1729631130062,"version":"3.28.0"},"reference-count":13,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,2]]},"DOI":"10.1109\/lascas.2016.7451019","type":"proceedings-article","created":{"date-parts":[[2016,4,14]],"date-time":"2016-04-14T20:19:48Z","timestamp":1460665188000},"page":"99-102","source":"Crossref","is-referenced-by-count":5,"title":["1.5 ppm\/\u00b0C nano-Watt resistorless MOS-only voltage reference"],"prefix":"10.1109","author":[{"given":"C. Jhon A.","family":"Gomez","sequence":"first","affiliation":[]},{"given":"Hamilton","family":"Klimach","sequence":"additional","affiliation":[]},{"given":"Eric","family":"Fabris","sequence":"additional","affiliation":[]},{"given":"Sergio","family":"Bampi","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"journal-title":"Operation and Modeling of the MOS Transistor","year":"1987","author":"tsividis","key":"ref10"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1978.1052049"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2252523"},{"key":"ref13","first-page":"-3","article-title":"0.9 V, 5 nW, 9 ppm\/°C Resistorless Sub-Bandgap Voltage Reference in 0.18 um CMOS","author":"mattia","year":"2014","journal-title":"Circuits Syst (LASCAS) 2014 IEEE Fifth …"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2013.07.003"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2206683"},{"key":"ref6","doi-asserted-by":"crossref","DOI":"10.1142\/6111","author":"galup-montoro","year":"2007","journal-title":"MOSFET Modeling for Circuit Analysis and Design"},{"key":"ref5","article-title":"High PSRR Nano-Watt MOS-Only Threshold Voltage Monitor Circuit","author":"gomez","year":"2015","journal-title":"Proc 28th Symp Integr Circuits Syst Des - SBCCI '15"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1023\/B:ALOG.0000011161.44537.da"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2004.842059"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2092997"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1980.1051519"},{"key":"ref9","first-page":"625","article-title":"PTAT Voltage Generator based on an MOS Voltage Divider","volume":"3","author":"rossi","year":"2007","journal-title":"NSTI Nanotech"}],"event":{"name":"2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)","start":{"date-parts":[[2016,2,28]]},"location":"Florianopolis","end":{"date-parts":[[2016,3,2]]}},"container-title":["2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7447194\/7450986\/07451019.pdf?arnumber=7451019","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,9,6]],"date-time":"2019-09-06T18:28:46Z","timestamp":1567794526000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7451019\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,2]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/lascas.2016.7451019","relation":{},"subject":[],"published":{"date-parts":[[2016,2]]}}}