{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T22:53:09Z","timestamp":1725663189937},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,3]]},"DOI":"10.1109\/latw.2015.7102516","type":"proceedings-article","created":{"date-parts":[[2015,5,8]],"date-time":"2015-05-08T11:54:45Z","timestamp":1431086085000},"page":"1-6","source":"Crossref","is-referenced-by-count":4,"title":["Impact of increasing the fin height on soft error rate and static noise margin in a FinFET-based SRAM cell"],"prefix":"10.1109","author":[{"given":"Hector","family":"Villacorta","sequence":"first","affiliation":[]},{"given":"Roberto","family":"Gomez","sequence":"additional","affiliation":[]},{"given":"Sebastia","family":"Bota","sequence":"additional","affiliation":[]},{"given":"Jaume","family":"Segura","sequence":"additional","affiliation":[]},{"given":"Victor","family":"Champac","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"3","first-page":"460","article-title":"Physics-based modeling of nonplanar nanodevices (FinFETs) and their response to radiation","author":"turowski","year":"2011","journal-title":"Proc 18th Int Conf MIXDES IEEE"},{"doi-asserted-by":"publisher","key":"2","DOI":"10.1109\/TDMR.2011.2168959"},{"doi-asserted-by":"publisher","key":"10","DOI":"10.1063\/1.356274"},{"doi-asserted-by":"publisher","key":"1","DOI":"10.1109\/7298.946456"},{"doi-asserted-by":"publisher","key":"7","DOI":"10.1109\/SOI.2009.5318785"},{"doi-asserted-by":"publisher","key":"6","DOI":"10.1109\/TNS.2012.2218128"},{"doi-asserted-by":"publisher","key":"5","DOI":"10.1109\/TNS.2009.2016564"},{"doi-asserted-by":"publisher","key":"4","DOI":"10.1007\/s11431-012-4758-0"},{"key":"9","first-page":"218t","article-title":"A 10 nm si-based bulk finfets 6t SRAM with multiple fin heights technology for 25% better static noise margin","author":"chen","year":"2013","journal-title":"VLSI Technology (VLSIT) 2013 Symposium on"},{"doi-asserted-by":"publisher","key":"8","DOI":"10.1109\/SOI.2010.5641392"}],"event":{"name":"2015 16th Latin-American Test Symposium (LATS)","start":{"date-parts":[[2015,3,25]]},"location":"Puerto Vallarta, Mexico","end":{"date-parts":[[2015,3,27]]}},"container-title":["2015 16th Latin-American Test Symposium (LATS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7101754\/7102396\/07102516.pdf?arnumber=7102516","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,24]],"date-time":"2017-03-24T14:05:01Z","timestamp":1490364301000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7102516\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,3]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/latw.2015.7102516","relation":{},"subject":[],"published":{"date-parts":[[2015,3]]}}}