{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,24]],"date-time":"2026-07-24T20:04:21Z","timestamp":1784923461739,"version":"3.55.0"},"reference-count":11,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Solid-State Circuits Lett."],"published-print":{"date-parts":[[2025]]},"DOI":"10.1109\/lssc.2025.3561280","type":"journal-article","created":{"date-parts":[[2025,4,16]],"date-time":"2025-04-16T13:54:15Z","timestamp":1744811655000},"page":"145-148","source":"Crossref","is-referenced-by-count":1,"title":["A Single-Ended Offset-Compensating Bit-Line Sense-Amplifier With Ground Precharge and Charge Transfer Pre Sensing for Sub-1V DRAM"],"prefix":"10.1109","volume":"8","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-1262-4854","authenticated-orcid":false,"given":"Changyoung","family":"Lee","sequence":"first","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Youngseok","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyunchul","family":"Yoon","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seryeong","family":"Yoon","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Donggeon","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bokyeon","family":"Won","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junhwa","family":"Song","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Injae","family":"Bae","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jae-Joon","family":"Song","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kyuchang","family":"Kang","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jaehyuk","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kyungrak","family":"Cho","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Incheol","family":"Nam","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jungdon","family":"Ihm","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Younghun","family":"Seo","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Changsik","family":"Yoo","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sangjun","family":"Hwang","sequence":"additional","affiliation":[{"name":"Samsung Electronics Company Ltd.","place":["Hwaseong, Gyeonggi, South Korea"],"department":["Department of Memory"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838026"},{"key":"ref2","volume-title":"Sensor amplifier, memory device comprising same, and related method of operation","author":"Seo","year":"2014"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2020.2972545"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2023.3269053"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2022.3226762"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/4.726562"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2004.825224"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/4.641692"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.1979.1155920"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2021.3063183"},{"key":"ref11","volume-title":"Semiconductor memory device for data sensing","author":"Kim","year":"2013"}],"container-title":["IEEE Solid-State Circuits Letters"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/8011414\/10804564\/10966420.pdf?arnumber=10966420","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,7,24]],"date-time":"2026-07-24T19:08:29Z","timestamp":1784920109000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10966420\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/lssc.2025.3561280","relation":{},"ISSN":["2573-9603"],"issn-type":[{"value":"2573-9603","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025]]}}}