{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,23]],"date-time":"2025-09-23T12:58:32Z","timestamp":1758632312996},"reference-count":19,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"6","license":[{"start":{"date-parts":[[2013,12,1]],"date-time":"2013-12-01T00:00:00Z","timestamp":1385856000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Des. Test"],"published-print":{"date-parts":[[2013,12]]},"DOI":"10.1109\/mdat.2013.2266394","type":"journal-article","created":{"date-parts":[[2013,6,6]],"date-time":"2013-06-06T18:12:07Z","timestamp":1370542327000},"page":"29-39","source":"Crossref","is-referenced-by-count":7,"title":["Device-Circuit Co-Optimization for Robust Design of FinFET-Based SRAMs"],"prefix":"10.1109","volume":"30","author":[{"given":"Sumeet Kumar","family":"Gupta","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kaushik","family":"Roy","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2006.321009"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.895879"},{"key":"ref12","first-page":"32.5.1","article-title":"Exploration of device-circuit interactions in FinFET-based memories for sub-15 nm technologies using a mixed mode quantum simulation framework: Atoms to systems","author":"gupta","year":"2011","journal-title":"Proc IEEE Int Electron Dev Meeting"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2001.934925"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IIT.2002.1257925"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2169678"},{"key":"ref16","first-page":"63","article-title":"An independent-gate FinFET SRAM cell for high data stability and enhanced integration density","author":"liu","year":"2007","journal-title":"Proc IEEE Int SOI Conf"},{"key":"ref17","first-page":"116","volume":"5349","author":"bauer","year":"2009","journal-title":"A Design Space Comparison of 6 T and 8 T SRAM Core-cells"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2128150"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2166117"},{"key":"ref4","first-page":"93","article-title":"Managing process variation in Intel's 45 nm CMOS technology","volume":"12","author":"kuhn","year":"2008","journal-title":"Intel Technol J"},{"key":"ref3","first-page":"25.1.1","article-title":"The impact of assist-circuit design for 22 nm SRAM and beyond","author":"karl","year":"2012","journal-title":"Proc Int Electron Dev Meeting"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDER.2004.1356490"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2007.4405809"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.862697"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/16.987114"},{"key":"ref2","first-page":"33","article-title":"FinFET technology for future microprocessors","author":"ludwig","year":"2003","journal-title":"Proc IEEE SOI Conf"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/16.887014"},{"key":"ref9","doi-asserted-by":"crossref","first-page":"85g","DOI":"10.1149\/1.1402497","article-title":"Work function engineering of molybdenum gate electrodes by nitrogen implantation","volume":"4","author":"ranade","year":"2001","journal-title":"Electrochem Solid State Lett"}],"container-title":["IEEE Design & Test"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6221038\/6727433\/06525400.pdf?arnumber=6525400","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:30:36Z","timestamp":1642005036000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6525400\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,12]]},"references-count":19,"journal-issue":{"issue":"6"},"URL":"https:\/\/doi.org\/10.1109\/mdat.2013.2266394","relation":{},"ISSN":["2168-2356","2168-2364"],"issn-type":[{"value":"2168-2356","type":"print"},{"value":"2168-2364","type":"electronic"}],"subject":[],"published":{"date-parts":[[2013,12]]}}}