{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,30]],"date-time":"2026-03-30T15:51:30Z","timestamp":1774885890381,"version":"3.50.1"},"reference-count":17,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"3","license":[{"start":{"date-parts":[[2017,6,1]],"date-time":"2017-06-01T00:00:00Z","timestamp":1496275200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Des. Test"],"published-print":{"date-parts":[[2017,6]]},"DOI":"10.1109\/mdat.2016.2594180","type":"journal-article","created":{"date-parts":[[2016,7,27]],"date-time":"2016-07-27T18:44:23Z","timestamp":1469645063000},"page":"59-67","source":"Crossref","is-referenced-by-count":13,"title":["Interdependencies of Degradation Effects and Their Impact on Computing"],"prefix":"10.1109","volume":"34","author":[{"given":"Hussam","family":"Amrouch","sequence":"first","affiliation":[]},{"given":"Victor M.","family":"van Santen","sequence":"additional","affiliation":[]},{"given":"Jorg","family":"Henkel","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424230"},{"key":"ref11","first-page":"50","article-title":"Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm","author":"tega","year":"2009","journal-title":"Proc Symp VLSI Technol"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2006.09.021"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2007.378282"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2008.915629"},{"key":"ref15","article-title":"BSIM compact MOSFET models for SPICE simulation","author":"chauhan","year":"2013","journal-title":"MIXDES"},{"key":"ref16","year":"0"},{"key":"ref17","year":"0"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1145\/2897937.2898082"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.3850\/9783981537079_0751"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2238237"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1145\/2593069.2593229"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.06.003"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2009.05.013"},{"key":"ref2","first-page":"3d.1.1","article-title":"Connecting the physical and application level towards grasping aging effects","author":"amrouch","year":"2015","journal-title":"Proc IEEE Int Reliab Phys Symp"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ICCAD.2014.7001394"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/16.735728"}],"container-title":["IEEE Design & Test"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6221038\/7920453\/07523292.pdf?arnumber=7523292","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:39:26Z","timestamp":1642005566000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7523292\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,6]]},"references-count":17,"journal-issue":{"issue":"3"},"URL":"https:\/\/doi.org\/10.1109\/mdat.2016.2594180","relation":{},"ISSN":["2168-2356","2168-2364"],"issn-type":[{"value":"2168-2356","type":"print"},{"value":"2168-2364","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017,6]]}}}