{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T10:04:52Z","timestamp":1730282692374,"version":"3.28.0"},"reference-count":9,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,5]]},"DOI":"10.1109\/mipro.2015.7160229","type":"proceedings-article","created":{"date-parts":[[2015,7,16]],"date-time":"2015-07-16T18:02:26Z","timestamp":1437069746000},"page":"12-14","source":"Crossref","is-referenced-by-count":2,"title":["The conductivity and TEMF of MoS<inf>2<\/inf> with Mo<inf>2<\/inf>S<inf>3<\/inf> additive"],"prefix":"10.1109","author":[{"given":"G.E.","family":"Yakovleva","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A. S.","family":"Berdinsky","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A. I.","family":"Romanenko","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S. P.","family":"Khabarov","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"V.E.","family":"Fedorov","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","first-page":"7931","article-title":"Flexible and transparent MoS2 field - effect transistors on hexagonal boron nitride - graphene heterostructures","volume":"7","author":"lee","year":"2013","journal-title":"ASCNANO"},{"key":"ref3","first-page":"1","article-title":"Thermoelectric performance of MX2 (M=Mo, W; X = S, Se) monolayaes","volume":"113","author":"huang","year":"2013","journal-title":"Journal of applied physics Singapore"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1007\/BF00361173"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/0379-6779(85)90016-5"},{"key":"ref8","first-page":"1","article-title":"Theoretical study of thermoelectic properties of MoS 2","volume":"23","author":"guo","year":"2013","journal-title":"Chin Phys B China"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1063\/1.4823509"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1070\/PU1973v015n06ABEH005061"},{"journal-title":"Electronic Processes in Noncrystalline Materials","year":"1979","author":"mott","key":"ref9"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.5012\/bkcs.2010.31.11.3225"}],"event":{"name":"2015 38th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","start":{"date-parts":[[2015,5,25]]},"location":"Opatija, Croatia","end":{"date-parts":[[2015,5,29]]}},"container-title":["2015 38th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7153596\/7160221\/07160229.pdf?arnumber=7160229","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,24]],"date-time":"2017-03-24T16:59:37Z","timestamp":1490374777000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7160229\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,5]]},"references-count":9,"URL":"https:\/\/doi.org\/10.1109\/mipro.2015.7160229","relation":{},"subject":[],"published":{"date-parts":[[2015,5]]}}}