{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,4]],"date-time":"2025-10-04T08:02:39Z","timestamp":1759564959103,"version":"3.28.0"},"reference-count":37,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2014,6]]},"DOI":"10.1109\/mixdes.2014.6872152","type":"proceedings-article","created":{"date-parts":[[2014,8,18]],"date-time":"2014-08-18T20:56:23Z","timestamp":1408395383000},"page":"54-57","source":"Crossref","is-referenced-by-count":2,"title":["Compact modeling of homojunction tunnel FETs"],"prefix":"10.1109","author":[{"given":"Arnab","family":"Biswas","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nilay","family":"Dagtekin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Cem","family":"Alper","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Luca","family":"De Michielis","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Antonios","family":"Bazigos","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wladek","family":"Grabinski","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Adrian","family":"Ionescu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"19","doi-asserted-by":"crossref","DOI":"10.1109\/JPROC.2010.2070470","volume":"98","author":"seabaugh","year":"2010","journal-title":"Proceedings of the IEEE"},{"key":"35","doi-asserted-by":"publisher","DOI":"10.1109\/DRC.2010.5551905"},{"key":"17","doi-asserted-by":"crossref","first-page":"181","DOI":"10.1016\/0022-3697(60)90035-4","volume":"12","author":"kane","year":"1960","journal-title":"Journal of Physics and Chemistry of Solids"},{"key":"36","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2011.11.023"},{"key":"18","doi-asserted-by":"publisher","DOI":"10.1063\/1.1735965"},{"key":"33","doi-asserted-by":"publisher","DOI":"10.1063\/1.4821100"},{"key":"15","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2010.5618222"},{"key":"34","first-page":"7","author":"biswas","year":"2014","journal-title":"Conformal Mapping Based DC Current Model for Double Gate Tunnel FETs 15th ULIS"},{"key":"16","first-page":"246","author":"landau","year":"1932","journal-title":"Phys Z Sowjetunion"},{"key":"13","first-page":"163","author":"mayer","year":"2008","journal-title":"Impact of SOI Si1-xGexOI and GeOI Substrates on CMOS Compatible Tunnel FET Performance IEDM"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2009.4897537"},{"key":"37","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2212175"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2009.5331446"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1098\/rspa.1934.0116"},{"key":"21","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(93)90065-X"},{"key":"20","doi-asserted-by":"publisher","DOI":"10.1109\/16.121690"},{"key":"22","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2012.6193389"},{"key":"23","doi-asserted-by":"crossref","first-page":"84507","DOI":"10.1063\/1.3386521","volume":"107","author":"luisier","year":"2010","journal-title":"Journal of Applied Physics"},{"key":"24","first-page":"137","author":"vandenberghe","year":"2008","journal-title":"2008 SiSPAD"},{"key":"25","doi-asserted-by":"crossref","first-page":"24518","DOI":"10.1063\/1.3277044","volume":"107","author":"verhulst","year":"2010","journal-title":"Journal of Applied Physics"},{"key":"26","doi-asserted-by":"crossref","first-page":"25","DOI":"10.5120\/ijais12-450142","volume":"1","author":"bhowmick","year":"2012","journal-title":"International Journal of Applied Information Systems"},{"key":"27","doi-asserted-by":"crossref","first-page":"31","DOI":"10.1016\/j.sse.2011.10.032","volume":"69","author":"kao","year":"2012","journal-title":"Solid-State Electronics"},{"key":"28","doi-asserted-by":"crossref","first-page":"1468","DOI":"10.1109\/LED.2012.2208933","volume":"33","author":"pan","year":"2012","journal-title":"IEEE EDL"},{"key":"29","doi-asserted-by":"publisher","DOI":"10.1063\/1.4821100"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2010.2070470"},{"key":"2","doi-asserted-by":"crossref","first-page":"2169","DOI":"10.1109\/JPROC.2010.2066530","article-title":"Device and architectures outlook for beyond CMOS switches","volume":"98","author":"bernstein","year":"2010","journal-title":"Proc IEEE"},{"key":"10","article-title":"Prospect of tunneling green transistor for 0.1 v CMOS","author":"hu","year":"0","journal-title":"IEEE Int Electron Devices Meet 16 1 1-16 1 4 (IEEE 2010)"},{"key":"1","first-page":"429","article-title":"Perspectives of low power VLSI's","author":"sakurai","year":"2004","journal-title":"IEICE Trans Electron C"},{"journal-title":"Tunneling in Solids","year":"1969","author":"duke","key":"30"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.93.196805"},{"key":"6","first-page":"219","article-title":"Heterojunction tunneling transistor (HETT)-based extremely low power applications","author":"kim","year":"2009","journal-title":"Proc Int Symp Low Power Electron Design"},{"key":"32","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2011.05.008"},{"journal-title":"Physics of Semiconductor Devices","year":"1969","author":"sze","key":"5"},{"journal-title":"TCAD Sentaurus Device Ver G-2012 06","year":"0","key":"31"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1038\/nature10679"},{"key":"9","first-page":"163","article-title":"Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible tunnel FET performance","author":"mayer","year":"2008","journal-title":"Tech Digest IEEE Int Electron Devices Meet"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796839"}],"event":{"name":"2014 21st International Conference \"Mixed Design of Integrated Circuits & Systems\" (MIXDES)","start":{"date-parts":[[2014,6,19]]},"location":"Lublin","end":{"date-parts":[[2014,6,21]]}},"container-title":["2014 Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6862970\/6872137\/06872152.pdf?arnumber=6872152","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,22]],"date-time":"2017-06-22T18:53:45Z","timestamp":1498157625000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6872152\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014,6]]},"references-count":37,"URL":"https:\/\/doi.org\/10.1109\/mixdes.2014.6872152","relation":{},"subject":[],"published":{"date-parts":[[2014,6]]}}}