{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,31]],"date-time":"2025-05-31T16:41:40Z","timestamp":1748709700980,"version":"3.28.0"},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,6]]},"DOI":"10.1109\/mixdes.2015.7208559","type":"proceedings-article","created":{"date-parts":[[2015,8,20]],"date-time":"2015-08-20T17:45:09Z","timestamp":1440092709000},"page":"440-445","source":"Crossref","is-referenced-by-count":1,"title":["Stability criteria of the thermal characterization of discrete components"],"prefix":"10.1109","author":[{"given":"Gergely","family":"Simon","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gabor","family":"Farkas","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/THERMINIC.2014.6972517"},{"key":"ref11","first-page":"507","article-title":"High temperature operation of AIGaN\/GaN HEMT","author":"adachi","year":"0","journal-title":"Microwave Symposium Digest 2005 IEEE MTT-S International"},{"key":"ref12","first-page":"121","article-title":"Measuring thermal resistance is the key to a cool semiconductor","volume":"51","author":"siegal","year":"1978","journal-title":"Electronics"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2002.1004235"},{"key":"ref14","article-title":"Power MOSFET Thermal Instability Operation Characterization","author":"shue","year":"2010","journal-title":"Support Hampton Va National Aeronautics and Space Administration Langley Research Center"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/63.844518"},{"year":"0","key":"ref4"},{"year":"1995","key":"ref3","article-title":"Methodology for the Thermal Measurement of Component Packages (Single Semiconductor Devices)"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2692(00)00051-3"},{"journal-title":"An Introduction to Diode Thermal Measurements","year":"0","author":"siegal","key":"ref5"},{"key":"ref8","first-page":"225","article-title":"Thermal transient characterization of pHEMT devices","author":"sarkany","year":"2012","journal-title":"Proc 18th THERMINIC"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4614-5091-7"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/THERMINIC.2008.4669889"},{"key":"ref1","first-page":"407","article-title":"New methods and supporting tools for the thermal transient testing of packages","author":"rencz","year":"2001","journal-title":"Proc Conf Adv Packag (Apack 01)"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/SEMI-THERM.2013.6526837"}],"event":{"name":"2015 MIXDES - 22nd International Conference \"Mixed Design of Integrated Circuits & Systems\"","start":{"date-parts":[[2015,6,25]]},"location":"Torun, Poland","end":{"date-parts":[[2015,6,27]]}},"container-title":["2015 22nd International Conference Mixed Design of Integrated Circuits & Systems (MIXDES)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7168332\/7208464\/07208559.pdf?arnumber=7208559","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,24]],"date-time":"2017-03-24T17:32:08Z","timestamp":1490376728000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7208559\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,6]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/mixdes.2015.7208559","relation":{},"subject":[],"published":{"date-parts":[[2015,6]]}}}